EMD12 / UMD12N / FMC7A Transistors Power management (dual digital transistors) EMD12 / UMD12N / FMC7A zExternal dimensions (Units : mm) zFeatures 1) Both the DTA144E and DTC144E in a EMT or UMT or SMT package. 0.22 (5) (3) (2) R1 FMC7A (4) (3) (1) (1) R2 R1 0.5 EMD12 / UMD12N (2) 1.2 1.6 0.13 zEquivalent circuit (3) (4) (6) 0.5 0.5 1.0 1.6 EMD12 (5) R2 ROHM : EMT6 Each lead has same dimensions R2 1.3 0.65 1.25 zPackage, marking, and packaging specifications 2.0 (3) (2) (1) (6) FMC7A Package EMT6 UMT6 SMT5 Marking D12 D12 C7 Code T2R TR T148 Basic ordering unit (pieces) 8000 3000 3000 0.7 UMD12N 0.1Min. ROHM : UMT6 EIAJ : SC-88 0to0.1 EMD12 0.15 2.1 Type 0.9 (2) (5) (6) 0.2 (5) (4) UMD12N (4) 0.65 R1 R1 (1) R2 Each lead has same dimensions Power dissipation EMD12 / UMD12N FMC7A 30 Pd 150(TOTAL) 300(TOTAL) (3) (2) 2.8 mA mA mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗1 120mW per element must not be exceeded. PNP type negative symbols have been omitted 2.9 100 1.1 IC IO 1.6 V −10 ∗1 0.3to0.6 ∗2 0to0.1 Output current 40 0.8 VIN (4) V Input voltage (5) Unit 50 (1) Limits VCC 0.15 Parameter 0.3 Symbol Supply voltage 0.95 0.95 1.9 FMC7A zAbsolute maximum ratings (Ta = 25°C) Each lead has same dimensions ROHM : SMT5 EIAJ : SC-74A ∗2 200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) Parameter Input voltage Symbol Min. Typ. Max. Unit VI (off) − − 0.5 V VCC=5/−5V, IO=100/−100µA VO=0.3/−0.3V, IO=2/−2mA VI (on) 3 − − V Output voltage Input current VO (on) II − − − − 0.3 0.18 V mA Output current IO (off) − − 0.5 µA DC current gain GI 68 − − − Transition frequency Input resistance fT R1 − 32.9 250 47 − 61.1 MHz kΩ R2 / R1 0.8 1 1.2 − Resistance ratio ∗Transition frequency of the device. PNP type negative symbols have been omitted Conditions IO=10/−10mA, II=0.5/−0.5mA VI=5/−5V VCC=50/−50V, VI=0V IO=5/−5mA, VO=5/−5V VCE=10/−10V, IE=−5/5mA, f=100MHz ∗ − −