ETC HSCH-9401

Agilent HSCH-9401
GaAs Schottky Diode
Data Sheet
Features
• fC >800 GHz
• Low junction capacitance
– typically 35 fF
• Low series resistance
– typically 6Ω
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Chip Thickness Tol:
Bond Pad Sizes:
610 x 255 µm (24 x 10 mils)
±10 µm (±0.4 mils)
100 µm (4 mils)
±15 µm (±0.6 mils)
175 x 175 µm (6.9 x 6.9 mils)
Description
The HSCH-9401 is a discrete
Schottky barrier diode fabricated
with the Schottky Barrier Integrated Diode (SBID) process.
Applications
The HSCH-9401 is a general
purpose millimeter wave diode
that can be used as a detector or
as a mixer in applications such
as digital radio, LMDS, or video
distribution.
Assembly Techniques
Diodes are ESD sensitive. ESD
preventive measures must be
employed in all aspects of
storage, handling, and assembly.
Diode ESD precautions, handling
considerations, die attach and
bonding methods are critical
factors in successful diode
performance and reliability.
• High cut-off frequency
• Polyimide scratch protection
• Durable construction
• Large bond pads suitable for
automated wire bonding or flipchip assembly
Specifications
• Vf (1 mA): 630 – 800 mV
• Vf (10 mA): 730 – 980 mV
• RS (5 mA): < 20Ω
• BV (-10 µA): > 6 V
Agilent application note #54,
“GaAs MMIC ESD, Die Attach
and Bonding Guidelines” provides basic information on these
subjects.
Additional References
PN #1, “HSCH-9401 Diode
Model,” and PN# 16, “HSCH-9401
Detector Sensitivity Measurements.”
• Ir (-2V): < 200 nA
• Ct: < 0.045 pF
This data sheet contains a variety of typical and guaranteed performance data. The
information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance.
For additional information contact your local Agilent sales representative.
www.agilent.com/semiconductors
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Data subject to change.
Copyright © 2002 Agilent Technologies, Inc.
Obsoletes 5968-4416E
April 4, 2002
5988-6154EN