IDP30E60 IDB30E60 Preliminary data Fast Switching EmConDiode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Product Summary VRRM 600 V IF 30 A VF 1.45 V T jmax 175 °C P-TO220-3.SMD Low forward voltage P-TO220-2-2. 175°C operating temperature Easy paralleling Type IDP30E60 Package P-TO220-2-2. Ordering Code Q67040-S4488 Marking D30E60 Pin 1 C PIN 2 A PIN 3 - IDB30E60 P-TO220-3.SMD Q67040-S4376 D30E60 NC C A Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage VRRM Continous forward current IF Value 600 V A TC=25°C 52.3 TC=90°C 34.9 Surge non repetitive forward current Unit IFSM 117 IFRM 81 TC=25°C, tp =10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 142.9 TC=90°C 80.9 Operating and storage temperature Soldering temperature Tj , Tstg TS 1.6mm(0.063 in.) from case for 10s Page 1 -55...+175 255 °C °C 2001-12-06 IDP30E60 IDB30E60 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.05 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current µA IR VR =600V, Tj =25°C - - 50 VR =600V, Tj =150°C - - 2500 Forward voltage drop V VF IF =30A, Tj =25°C - 1.45 2 IF =30A, Tj =150°C - 1.45 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-12-06 IDP30E60 IDB30E60 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns trr VR =400V, IF =30A, diF /dt=1000A/µs, Tj =25°C - 126 - VR =400V, IF =30A, diF /dt=1000A/µs, Tj =125°C - 171 - VR =400V, IF =30A, diF /dt=1000A/µs, Tj =150°C - 178 - Peak reverse current A Irrm VR =400V, IF = 30A, diF/dt=1000A/µs, Tj =25°C - 19 - VR =400V, IF =30A, diF /dt=1000A/µs, Tj =125°C - 22 - VR =400V, IF =30A, diF /dt=1000A/µs, Tj =150°C - 24 - Reverse recovery charge nC Qrr VR =400V, IF =30A, diF /dt=1000A/µs, Tj =25°C - 1100 - VR =400V, IF =30A, diF /dt=1000A/µs, Tj =125°C - 1950 - VR =400V, IF =30A, diF /dt=1000A/µs, Tj =150°C - 2150 - VR =400V, IF =30A, diF /dt=1000A/µs, Tj =25°C - 4 - VR =400V, IF =30A, diF /dt=1000A/µs, Tj =125°C - 4.6 - VR =400V, IF =30A, diF /dt=1000A/µs, Tj =150°C - 4.8 - Reverse recovery softness factor S Page 3 2001-12-06 IDP30E60 IDB30E60 Preliminary data 1 Power dissipation 2 Diode forward current Ptot = f (TC ) IF = f(TC ) parameter: Tj 175 °C parameter: Tj 175°C 55 150 W A 45 120 40 100 IF Ptot 110 90 35 80 30 70 25 60 20 50 40 15 30 10 20 5 10 0 25 50 75 100 125 °C 0 25 175 50 75 100 125 TC 175 TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF ) VF = f (Tj ) 2 90 V A 70 60 60A 1.8 -55°C 25°C 100°C 150°C 1.7 VF IF °C 1.6 50 30A 1.5 40 1.4 30 1.3 15A 20 1.2 10 0 0 1.1 0.5 1 1.5 V 2.5 VF Page 4 1 -60 -20 20 60 100 °C 160 Tj 2001-12-06 IDP30E60 IDB30E60 Preliminary data 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF /dt) Qrr =f(diF /dt) parameter: VR = 400V, Tj = 125°C parameter: VR = 400V, Tj = 125 °C 500 2600 ns nC 60A 2200 60A 30A 15A 350 Qrr trr 400 2000 300 1800 250 1600 200 1400 150 1200 100 200 300 400 500 600 700 800 1000 200 A/µs 1000 diF /dt 30A 15A 300 400 500 600 700 800 A/µs 1000 diF /dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(400) parameter: VR = 400V, Tj = 125°C parameter: VR = 400V, Tj = 125°C 26 12 A 22 18 60A 30A 15A 60A 30A 15A 9 S Irr 20 10 8 16 7 14 6 12 5 10 4 8 6 200 300 400 500 600 700 800 A/µs 1000 diF /dt Page 5 3 200 300 400 500 600 700 800 A/µs 1000 diF /dt 2001-12-06 Preliminary data IDP30E60 IDB30E60 9 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 IDP30E60 K/W Z thJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 0.02 10 -3 single pulse 10 -4 -7 10 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp Page 6 2001-12-06 IDP30E60 IDB30E60 Preliminary data TO-220-2-2 N A P dimensions [mm] symbol E D U H B V F W X J L G max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L 1.05 typ. M 2.54 typ. 0.1 typ. N 4.4 typ. 0.173 typ. P T C M 1.10 1.40 0.41 typ. 0.0433 0.0551 2.4 typ. 0.095 typ. 0.26 typ. U 6.6 typ. V 13.0 typ. 0.51 typ. W 7.5 typ. 0.295 typ. X T [inch] min 0.00 0.40 0.0000 0.0157 K Page 7 2001-12-06 IDP30E60 IDB30E60 Preliminary data TO-220-3-45 (P-TO220SMD) dimensions [mm] symbol min A min max B 9.80 10.00 1.3 typ. 0.3858 0.3937 0.0512 typ. C 1.25 0.0492 D 0.95 1.15 2.54 typ. 0.0374 0.0453 0.1 typ. G 0.72 0.85 5.08 typ. 0.0283 0.0335 0.2 typ. H 4.30 4.50 0.1693 K 1.28 1.40 0.0504 0.0551 L 9.00 9.40 0.3543 0.3701 M N 2.30 2.50 14.1 typ. 0.0906 0.0984 0.5551 typ. P 0.00 0.0000 Q R 3.30 3.90 8° max 0.1299 0.1535 8° max S 1.70 0.0669 T U 0.50 0.65 10.8 typ. 0.0197 0.0256 0.4252 typ. V 1.35 typ. 0.0532 typ. W 6.43 typ. 0.2532 typ. X 4.60 typ. 0.1811 typ. Y 9.40 typ. 0.3701 typ. Z 16.15 typ. 0.6358 typ. E F Page 8 [inch] max 1.75 0.20 2.50 0.0689 0.1772 0.0079 0.0984 2001-12-06 Preliminary data IDP30E60 IDB30E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 2001-12-06