EMB6 / UMB6N / IMB6A Transistors General purpose (dual digital transistors) EMB6 / UMB6N / IMB6A zExternal dimensions (Units : mm) zFeatures 1) Two DTA144E chips in a EMT or UMT or SMT package. (4) (3) (5) (2) (6) EMB6 / UMB6N IMB6A (3) (4) ROHM : EMT6 R1 R2 1.25 1.3 0.65 2.0 (1) (6) (3) (2) 0.65 R1 (6) (3) R1 (4) (5) UMB6N (2) R2 R2 0.2 R2 0.5 Each lead has same dimensions (6) (4) R1 (5) (1) (1) (5) (2) (1) 1.2 1.6 0.13 zEquivalent circuit 0.5 0.5 1.0 1.6 0.22 EMB6 UMB6N IMB6A EMT6 UMT6 SMT6 0.1Min. 0to0.1 EMB6 0.7 0.15 Type Package 0.9 2.1 zPackage, marking, and packaging specifications Each lead has same dimensions Marking B6 B6 B6 Code T2R TR T110 Basic ordering unit (pieces) 8000 3000 3000 ROHM : UMT6 EIAJ : SC-88 Output current IO Power dissipation EMB6 / UMB6N IMB6A Pd 50 150(TOTAL) 300(TOTAL) mA mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C 0.95 0.95 1.9 2.9 (1) (2) 2.8 V 10 0.3to0.6 ∗1 ∗2 1.1 VIN 1.6 0.8 V −40 (3) Unit −50 (4) Limits VCC 0to0.1 Input voltage Symbol 0.15 Parameter Supply voltage (5) zAbsolute maximum ratings (Ta = 25°C) (6) 0.3 IMB6A Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. VI (off) − − −0.5 Unit Conditions VCC=−5V, IO=−100µA VI (on) −3.0 − − V Output voltage Input current VO (on) II − − −0.1 − −0.3 −0.18 V mA IO=−10mA, II=−0.5mA VI=−5V Output current Input voltage VO=−0.3V, IO=−2mA IO (off) − − −0.5 µA VCC=−50V, VI=0V DC current gain GI 68 − − − IO=−5mA, VO=−5V Input resistance R1 32.9 47 61.1 kΩ Resistance ratio R2 / R1 0.8 1.0 1.2 − fT − 250 − MHz Transition frequency ∗Transition frequency of the device. − − VCE=−10V, IE=5mA, f=100MHz ∗