INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 October 2001. MIL-PRF-19500/601D 17 July 2001 SUPERSEDING MIL-PRF-19500/601C 12 October 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 AND U SUFFIXES JANTXVR, F, G, AND H AND JANSR, F, G, AND H This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). 1.2 Physical dimensions. See figure 1, (TO-205AF) and figure 2 (LCC). 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C. Type PT (2) PT (1) TC = +25°C TA = +25°C (free air) W W V dc V dc 25 25 0.8 0.8 100 200 100 200 2N7261 2N7262 VDS VDG VGS ID1(3) ID2 IS IDM TC = +25°C TC = +100°C (3) V dc A dc A dc ±20 ±20 8 .0 5.5 5 .0 3.5 (4) Top and TSTG VISO 70,000 foot altitude A dc A(pk) °C V dc 8 .0 5.5 32 22 -55 to +150 N/A N/A (1) Unless otherwise specified, electrical characteristics, ratings and conditions for “U” suffix devices (surface mount LCC) are identical to the corresponding non “U” suffix devices. (2) Derate linearly 0.2 W/°C for TC > +25°C; (3) 1 T J max - T C ID= ( RθJC )x( r DSon at T J max ) (4) IDM = 4 X ID1 as calculated in footnote (2). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/601D Symbol (see note 3) Dimensions Inches Millimeters Min Max Min Max CD .315 .355 8.01 9.01 CH .160 .180 4.07 4.57 H .009 .041 0.23 1.04 HD .340 .370 8.64 9.39 LC .200 BSC 5.08 BSC LD .016 .021 0.41 0.53 LL .500 .750 12.70 19.05 LU .016 .019 0.41 0.48 .050 L1 1.27 L2 .250 6.35 P .070 1.78 Q .050 1.27 TL .029 .045 0.74 1.14 TW .028 .034 0.72 0.86 α 45° BSC Term 1 Source Term 2 Gate Term 3 Drain NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Refer to applicable symbol list. 4. The US Government preferred system of measurement is the metric SI system. However, this item was originally designed using inch-pound units of measurement. In the event of a conflict between the metric and inch-pound units, the inch-pound units shall take precedence. 5. Lead number 1 is the source, lead number 2 is the gate, lead number 4 is omitted from this outline. The drain is number 3 and is electrically connected to the case. FIGURE 1. Physical dimensions for TO-205AF (2N7261 and 2N7262). 2 MIL-PRF-19500/601D 18 1 FIGURE 2. Physical dimensions for LCC (2N7261U and 2N7262U). 3 MIL-PRF-19500/601D Symbol Dimensions Inches Min Max Min Max BL .345 .360 8.77 9.14 BW .280 .295 7.12 7.49 CH .095 .115 2.42 2.92 LL1 .040 .055 1.02 1.39 LL2 .055 .065 1.40 1.65 LS .059 BSC 1.27 BSC LS1 .025 BSC .635 BSC LS2 .008 BSC .203 BSC LW 1. 2. 3. Millimeters .020 .030 0.51 0.76 Q1 .105 REF 2.67 REF Q2 .120 REF 3.05 REF Q3 .045 .055 1.15 1.39 TL .070 .080 1.78 2.03 TW .120 .130 3.05 3.30 NOTES: Dimensions are in inches. Metric equivalents are given for general information only. Dimensions and tolerancing shall be in accordance with ANSI Y14.5M-1982. FIGURE 2. Physical dimensions for LCC (2N7261U and 2N7262U) - Continued. 4 MIL-PRF-19500/601D 1.4 Primary electrical characteristics at TC = +25°C. Min VGS(TH) V(BR)DSS V DS ≥ VGS VGS = 0 ID = 1.0 ID = 1.0 mA dc mA dc Type V dc 2N7261 2N7262 100 200 V dc Min Max 2.0 2.0 4.0 4.0 Max IDSS1 VGS = 0 VDS = 80 percent of rated VDS Max rDS(ON) (1) VGS = 12 V dc RθJC max EAS at ID1 IAS TJ = 25°C at ID2 TJ = 150°C at ID2 µA dc ohm ohm °C/W mJ A 25 25 0.180 0.350 0.390 0.840 5.0 5.0 130 240 8.0 5.5 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 5 MIL-PRF-19500/601D 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IAS - Rated avalanche current, nonrepetitive. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1 (TO-205AF) and 2 (LCC) herein. 3.4.1 Lead material and finish. Lead material shall be Kovar or Alloy 52 for the TO - 205AF; a copper core or plated core is permitted. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead material or finish is desired, it shall be specified in the acquisition document (see 6.5). 3.4.2 Internal construction. Multiple chip construction is not be permitted to meet the requirements of this specification. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R ≤ 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 6 MIL-PRF-19500/601D 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4 and tables I, II and III herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and table III herein. 7 MIL-PRF-19500/601D 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with Appendix E, table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTXV level (1) Method 3470 (see 4.5.4) Method 3470 (see 4.5.4) (1) Method 3161 (see 4.5.3) Method 3161 (see 4.5.3) (1) Gate stress test (see 4.5.5) Gate stress test (see 4.5.5) 9 (1) Subgroup 2 of table I herein; IGSS, IDSS1 Not applicable 10 Method 1042, test condition B of MIL-STD-750 Method 1042, test condition B of MIL-STD-750 11 IGSSF1, IGSSR1, IDSS1, rDS(on),VGS(TH) Subgroup 2 of table I herein; ∆ IGSSF1 = ± 20 nA dc or ±100 percent of initial value, whichever is greater. ∆IGSSR1 = ± 20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ± 10 µA dc or ± 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on),VGS(TH) Subgroup 2 of table I herein 12 Method 1042, test condition A of MIL-STD-750 Method 1042, test condition A of MIL-STD-750 13 Subgroups 2 and 3 of table I herein ∆ IGSSF1 = ± 20 nA dc or ±100 percent of initial value, whichever is greater. ∆IGSSR1 = ± 20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ± 10 µA dc or ± 100 percent of initial value, whichever is greater. ∆rDS(on)1 = ± 20 percent of initial value ∆VGS(TH)1= ± 20 percent of initial value (1) Shall be performed anytime before screen 10. Subgroups 2 and 3 of table I herein ∆ IGSSF1 = ± 20 nA dc or ±100 percent of initial value, whichever is greater. ∆IGSSR1 = ± 20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ± 10 µA dc or ± 100 percent of initial value, whichever is greater. ∆rDS(on)1 = ± 20 percent of initial value ∆VGS(TH)1= ± 20 percent of initial value 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Alternate flow is allowed for quality conformance inspection in accordance with of MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500. End-point electrical measurements shall be in accordance with table I, group A, subgroup 2 herein. 8 MIL-PRF-19500/601D 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VIa (JANS) and table VIb (JANTX and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, group A, subgroup 2 herein. 4.4.2.1 Group B inspection, appendix E, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2075 See 3.4.2 herein. B3 2077 Scanning electron microscope (SEM) qualification may be performed anytime prior to lot formation. B3 2037 Test condition A, all internal wired for each device shall be pulled separately. B4 1042 Condition D, 2,000 cycles. No heat sink nor forced-air cooling on the device shall be permitted during the on cycle. The heating cycle shall be 30 seconds minimum. B5 1042 Test condition A, VDS = rated TA = +175°C, t = 120 hours. B5 1042 Condition B, VGS = rated; TA = 175°C; t = 24 hours. B5 2037 Bond strength (Al-Au die interconnects only); test condition A. B6 3161 See 4.5.2 herein. 4.4.2.2 Group B inspection, appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. B3 1042 Test condition D, 2,000 cycles; The heating cycle shall be 30 seconds minimum. B4 2075 See 3.4.2 herein. B4 2037 Test condition A. All internal bond wires for each device shall be pulled separately. B5 and B6 Not applicable. 9 MIL-PRF-19500/601D 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable of table I, group A, subgroup 2 herein. Subgroup Method Condition C2 1056 Test condition B. C2 2036 Test condition E; weight = 8 ounces, 3 arcs of 90° (applicable to TO - 205AF only). C2 1021 Omit initial conditioning. C5 1001 Test condition C. For device type 2N7270: VDS = 500 V; I(ISO) < 0.25 mA. C6 1042 Test condition D, 6,000 cycles. The heating cycle shall be 30 seconds minimum. 4.4.4 Group D Inspection. Group D inspection shall be conducted in accordance with table VIII of MIL-PRF-19500 and table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750. The maximum limit of RθJC(max) = 5.0°C/W. The following parameter measurements shall apply: a. Measuring current (IM) .......................................... 10 mA. b. Drain heating current (IH) ...................................... 1 A (1.3 A minimum for LCC). c. Heating time (tH)..................................................... Steady-state (see method 3161 MIL-STD-750 for definition). d. Drain-source heating voltage (VH) ........................ 25 V (15 V for LCC). e. Measurement time delay (tMD) .............................. 30 µs to 60 µs. f. Sample window time (tSW ) .................................... 10 µs maximum. 10 MIL-PRF-19500/601D 4.5.3 Thermal impedance (ZθJC measurements). The ZθJC. measurements shall be performed in accordance with method 3161 of MIL-STD-750. The maximum limit (not to exceed figure 3, thermal impedance curves and the group A, subgroup 2 limits) for ZθJC in screening (appendix E, table IV of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for engineering evaluation and disposition. This procedure may be used in lieu of an in-line procedure. a. Measuring current (IM) ...................................................... 10 mA. b. Drain heating current (IH) .................................................. 1 A minimum (1.3 A minimum for LCC). c. Heating time (tH) ................................................................ 10 ms. d. Drain-source heating voltage (VH) ..................................... 25 V (15 V for LCC). e. Measurement time delay (tMD) .......................................... 30 µs to 60 µs. f. Sample window time (tSW ) ............................................... 10 µs maximum. 4.5.4 Single pulse avalanche energy (EAS). a. Peak current (IAS). ............................................................ IAS(max). b. Peak gate voltage (VGS) .................................................... 10 V. c. Gate to source resistor (RGS) ........................................... 25Ω ≤ RGS ≤ 200Ω. d. Initial case temperature (TC) ............................................. +25°C +10°C, -5°C. e. Inductance (L) ................................................................... 2E AS [(V BR - V DD )] 2 ( I D1 ) V BR mH minimum 2. f. Number of pulses to be applied ......................................... 1 pulse minimum. g. Supply voltage (VDD) ........................................................ 25 V for 2N7261, 50 V for 2N7262. 4.5.5 Gate stress test. a. VGS = 30 V minimum. b. t = 250 µs minimum. 11 MIL-PRF-19500/601D TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal impedance 2/ 3161 See 4.5.3 ZθJC Breakdown voltage, drain to source 3407 VGS = 0 V dc, ID = 1 mA dc, bias condition C V(BR)DSS 2N7261 2N7262 100 200 Gate to source voltage (threshold) 3403 VDS ≥ VGS ID = 1 mA dc VGS(TH)1 Gate current 3411 VGS = +20 V dc and -20 V dc, bias condition C, VDS = 0 IGSS(TH)1 Drain current 3413 VGS = 0 V dc, bias condition C, VDS = 80 percent of rated VDS IDSS1 Static drain to source on-state resistance 3421 VGS = 12 V dc, condition A, pulsed (see 4.5.1), ID = ID2 rDS(on)1 2N7261 2N7262 Static drain to source on-state resistance 3421 VGS = 12 V dc, condition A, pulsed (see 4.5.1), ID = ID1 4011 2N7261 2N7262 Pulsed (see 4.5.1), ID = ID1, VGS = 0 V dc See footnote at end of table. 12 2.0 °C/W V dc V dc 4.0 V dc ± 100 nA dc 25 µA dc 0.180 0.350 ohm ohm 0.185 0.364 ohm ohm 1.5 1.4 V V rDS(on)2 2N7261 2N7262 Forward voltage 1.40 VSD MIL-PRF-19500/601D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 3 High-temperature operation: TC = TJ = +125°C Gate current 3411 VGS = +20 V dc and -20 V dc, bias condition C, VDS = 0 IGSS2 ± 200 nA dc Drain current 3413 VGS = 0 V dc, bias condition C, VDS = 100 percent of rated VDS IDSS2 1.0 mA dc VDS = 80 percent of rated VDS IDSS3 0.25 mA dc 0.350 0.6 ohm ohm Static drain to source on-state resistance 3421 VGS = 12 V dc, pulsed (see 4.5.1), ID = ID2 rDS(on)3 2N7261 2N7262 Gate to source voltage (thresholds) 3403 Low-temperature operation: Gate to source voltage (threshold) VDS ≥ VGS, ID = 1 mA dc VGS(TH)2 1.0 V dc TC = TJ = -55°C 3403 VDS ≥ VGS, ID = 1 mA dc 3475 ID = rated ID2, VDD = 15 V (see 4.5.1) VGS(TH)3 5.0 V dc Subgroup 4 Forward transconductance gFS 2N7261 2N7262 Switching time test 2.5 2.5 3472 S S ID = ID1, VGS= 12 V dc, RG = 2.35Ω, VDD = 50 percent of rated VDS Turn-on delay time td(on) 2N7261 2N7262 25 25 See footnote at end of table. 13 ns ns MIL-PRF-19500/601D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 4 - Continued Rise time tr 2N7261 2N7262 Turn-off delay time 32 40 ns ns 40 60 ns ns 40 45 ns ns 50 50 nC nC 10 10 nC nC td(off) 2N7261 2N7262 Fall time tf 2N7261 2N7262 Subgroup 5 Safe operating area test (high voltage) 3474 Electrical measurements See figure 4 and 5; tp = 10 ms minimum, VDS = 80 percent of maximum rated VDS, (VDS ≤ 200) See table I, subgroup 2 herein. Subgroup 6 Not applicable Subgroup 7 Gate charge 3471 Condition B On-state gate charge QG(on) 2N7261 2N7262 Gate to source charge QGS 2N7261 2N7262 See footnote at end of table. 14 MIL-PRF-19500/601D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 7 - Continued Gate to drain charge QGD 2N7261 2N7262 Reverse recovery time 3473 di/ dt ≤ 100 A/µs, VDD ≤ 30 V, ID = ID1 2N7261 2N7262 20 25 nC nC 270 400 ns ns trr 1/ For sampling plan, see MIL-PRF-19500. 2/ This test is required for the following end-point measurements only (not intended for screen 13). JANS - group B, subgroups 3 and 4. JANTX and JANTXV - group B, subgroups 2 and 3; group C, subgroup 6; group E, subgroup 1. 15 MIL-PRF-19500/601D TABLE II. Group D inspection. MIL-STD-750 Inspection 1/ 2/ 3/ Symbol Method Conditions Pre-irradiation limits 4/ R F, G, and H Min Max Min Max Post-irradiation limits 4/ R F, G, and H Min Max Min Max 100 200 100 200 Unit Subgroup 1 Not applicable Subgroup 2 TC = +25°C Steady-state total dose irradiation (VGS bias) 5/ 1019 V GS = 12 V, VDS = 0 Steady-state total dose irradiation (VDS bias) 5/ 1019 VGS = 0, VDS = 80 percent of rated VDS (preirradiation) End-point electrical Breakdown voltage, drain to source 3407 VGS = 0, VBRDSS ID = 1 mA, bias condition C 2N7261 2N7262 Gate to source Voltage (threshold) 3403 VDS ≥ VGS, ID = 1 mA 100 200 100 200 V dc V dc VGSth 2N7261 2N7262 2 2 4 4 2 2 4 4 2 2 4 4 1.25 1.25 4.50 4.50 V dc V dc nA dc Gate current 3411 VGS = 20 V, VDS = 0, bias condition C IGSSF1 100 100 100 100 Gate current 3411 VGS = -20 V, VDS = 0, bias condition C IGSSR1 -100 -100 -100 -100 nA dc See footnotes at end of table. 16 MIL-PRF-19500/601D TABLE II. Group D inspection - Continued. MIL-STD-750 Inspection 1/ 2/ 3/ Symbol Method Conditions Pre-irradiation limits 4/ R F, G, and H Min Max Min Max Post-irradiation limits 4/ R F, G, and H Min Max Min Max Unit Subgroup 2 Continued Drain current 3413 VGS = 0 Bias condition C VDS = 80 percent of rated VDS (preirradiation) IDSS 2N7261 2N7262 Static drain to source onstate Voltage 3405 VGS = 12 V Condition A pulsed (see 4.51) ID = ID2 4011 VGS = 0 V ID = ID1 25 25 25 25 50 50 µA dc µA dc 0.9 1.225 0.9 1.225 0.9 1.225 1.2 1.68 V dc V dc 1.5 1.4 1.5 1.4 1.5 1.4 1.5 1.4 V dc V dc VDSon1 2N7261 2N7262 Forward voltage Source drain diode 25 25 VSD 2N7261 2N7262 1/ For sampling plan, see MIL-PRF-19500. 2/ Group D qualification may be performed anytime prior to lot formation. Wafers qualified to these group D QCI requirements may be used for any other detail specification utilizing the same die design. 3/ At the manufacturers option, group D samples need not be subjected to the screening tests, and may be assembled in it’s qualified package or in any qualified package that the manufacturer has data to correlate the performance to the designated package. 4/ The F designation represent devices which pass end-points at both 100K and 300K rad (Si). The G designation represents devices which pass 100K, 300K, and 600K rad (Si) end-points. The H designation represents devices which pass 100k, 300k, 600k and 1000k rad (Si). 5/ Separate samples shall be pulled for each bias. 17 MIL-PRF-19500/601D TABLE III. Group E inspection (all quality levels) for qualification only. MIL-STD-750 Inspection Method Conditions Qualification and large lot quality conformance inspection 12 devices c=0 Subgroup 1 Thermal shock (temperature cycling) 1051 Hermetic seal 1071 Test condition G, 500 cycles Fine leak Gross leak Electrical measurements See table I, group A, subgroup 2 12 devices c=0 Subgroup 2 1/ Steady-state reverse bias 1042 Electrical measurements Steady-state gate bias Condition B, 1,000 hours See table I, group A, subgroup 2 1042 Electrical measurements Condition A, 1,000 hours See table I, group A, subgroup 2 Subgroup 3 Not applicable Subgroup 4 Thermal resistance 3161 RθJC = 5.0 °C/W maximum. See 4.5.2 1/ A separate sample for each test shall be pulled. 18 12 devices c=0 MIL-PRF-19500/601D FIGURE 3. Thermal impedance curves. 19 MIL-PRF-19500/601D 2N7261 100 ID, Drain Current (A) Operation in this area limited by rdson 10 100µs 1ms 1 10ms TC = 25o C TJ = 150oC Single Pulse 0.1 1 10 V DS , Drain-to-Source Voltage (V) FIGURE 4. Safe operating area graph. 20 100 MIL-PRF-19500/601D 2N7262 100 ID, Drain Current (A) Operation in this area limited by rdson 10 100µs 1ms 1 10ms TC = 25oC TJ = 150o C Single Pulse 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) FIGURE 5. Safe operating area graph. 21 1000 MIL-PRF-19500/601D 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation and if required, the specific issue of individual documents referenced (see 2.2.1). c. The lead finish as specified (see 3.4.1). d. Type designation and quality assurance level. e. Packaging requirements (see 5.1). f. For die acquisition, the JANHC or JANKC letter version shall be specified (see figure 2). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000. 22 MIL-PRF-19500/601D 6.4 Substitution information. Devices covered by this specification are substitutable for the manufacturer's and user's Part or Identifying Number (PIN). This information in no way implies that manufacturer's PIN's are suitable for the military PIN. Preferred types Commercial types TO-205AF LCC 2N7261, U IRHFX130 (1) IRHEX130 (1) 2N7262, U IRHFX230 (1) IRHEX230 (1) (1) Replace “X” with number indicating qualified Radiation Hardness follows: 7 = 100K Rad Si 3 = 300K Rad Si 4 = 600K Rad Si 8 = 1000K Rad Si 6.5 Ordering data. Acquisition documents may specify the material and finish (see 3.4.1). 6.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. Custodians: Army - CR Navy - NW Air Force - 11 NASA – NA DLA - CC Preparing activity: DLA - CC (Project 5961-2258) Review activities: Air Force - 19, 70 23 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/601D 2. DOCUMENT DATE 010717 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 AND U SUFFIXES JANTXVR, F, G, AND H AND JANSR, F, G, AND H 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99