NCP4555, NCP4586 100 mA and 150 mA CMOS LDOs with Shutdown and Error Output The NCP4555 and NCP4586 are high accuracy (typically 0.5%) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery–operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 50 µA at full load (20 to 60 times lower than in bipolar regulators). The devices’ key features include ultra low noise operation, very low dropout voltage – typically 180 mV (NCP4555) and 270 mV (NCP4586) at full load – and fast response to step changes in load. An error output (ERROR) is asserted when the devices are out–of–regulation (due to a low input voltage or excessive output current). ERROR can be used as a low battery warning or as a processor RESET signal (with the addition of an external RC network). Supply current is reduced to 0.5 µA (max) and both VOUT and ERROR are disabled when the shutdown input is low. The devices incorporate both over–temperature and over–current protection. The NCP4555 and NCP4586 are stable with an output capacitor of only 1.0 µF and have a maximum output current of 100 mA and 150 mA, respectively. For higher output current regulators, please see the NCP4569 (IOUT = 300 mA) data sheet. • Zero Ground Current for Longer Battery Life • Very Low Dropout Voltage • Guaranteed 100 mA and 150 mA Output • • • 5 4 1 2 SOT–23 SN SUFFIX CASE 1212 3 PIN CONNECTIONS VIN 1 5 VOUT GND 2 SHDN 3 4 ERROR (Top View) ORDERING INFORMATION Features • • • • http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. (NCP4555 and NCP4586 Respectively) High Output Voltage Accuracy Standard or Custom Output Voltages Power–Saving Shutdown Mode ERROR Output Can Be Used as a Low Battery Detector, or Processor Reset Generator Over–Current and Over–Temperature Protection Space–Saving 5–Pin SOT–23A Package Pin Compatible Upgrades for Bipolar Regulators DEVICE MARKING INFORMATION See general marking information in the device marking section on page 11 of this data sheet. Applications • • • • • • • Battery–Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSMS/PHS Phones Linear Post–Regulators for SMPS Pagers Semiconductor Components Industries, LLC, 2001 February, 2001 – Rev. 0 1 Publication Order Number: NCP4555/D NCP4555, NCP4586 VIN 1 2 VOUT VIN GND 5 + VOUT 1 µF NCP4555 NCP4586 1M 3 SHDN ERROR 4 ERROR Shutdown Control (from Power Control Logic) Figure 1. Typical Application ABSOLUTE MAXIMUM RATINGS* Rating Symbol Value Unit Input Voltage – 6.5 V Output Voltage – –0.3 to VIN + 0.3 V Power Dissipation – Internally Limited – Operating Temperature Range TA –40 TJ 125 °C Storage Temperature Tstg –65 to +150 °C Maximum Voltage on any Pin – VIN + 0.3 to – 0.3 V Lead Temperature (Soldering, 10 Sec.) – +260 °C VESD 2000 V ESD Withstand Voltage Human Body Model (Note 1.) Latch–Up Performance (Note 2.) ILATCH–UP Positive Negative mA 250 500 *Stresses above those listed under “Absolute Maximum Ratings’’ may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. 1. Tested to EIA/JESD22–A114–A 2. Tested to EIA/JESD78 http://onsemi.com 2 NCP4555, NCP4586 ELECTRICAL CHARACTERISTICS (VIN = VOUT + 1.0 V, IL = 100 µA, CL = 3.3 µF, SHDN VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of –40°C to +125°C.) Characteristics Test Conditions Symbol Min Typ Max Unit Input Operating Voltage – VIN – – 6.0 V Maximum Output Current NCP4555 NCP4586 – IOUTMAX 100 150 – – – – mA Output Voltage Note 3. VOUT VR – 2.5% VR 0.5% VR + 2.5% V VOUT Temperature Coefficient Note 4. TCVOUT – – 20 40 – – ppm/°C (VR + 1.0 V) VIN 6.0 V VOUT/VIN – 0.05 0.35 % – – 0.5 0.5 2.0 3.0 Line Regulation Load Regulation NCP4555 NCP4586 VOUT/VOUT IL = 0.1 mA to IOUTMAX IL = 0.1 mA to IOUTMAX Note 5. % IL = 100 µA IL = 20 mA IL = 50 mA IL = 100 mA IL = 150 mA Note 6. VIN – VOUT – – – – – 2.0 65 85 180 270 – – 120 250 400 mV Supply Current (Note 10.) SHDN = VIH, IL = 0 IIN – 50 80 µA Shutdown Supply Current SHDN = 0 V IINSD – 0.05 0.5 µA FRE 1.0 kHz PSRR – 64 – dB Output Short Circuit Current VOUT = 0 V IOUTSC – 300 450 mA Thermal Regulation Notes 7., 8. VOUT/PD – 0.04 – V/W Thermal Shutdown Die Temperature – TSD – 160 – °C Thermal Shutdown Hysteresis – TSD – 10 – °C IL = IOUTMAX 470 pF from Bypass to GND eN – 260 – nV Hz SHDN Input High Threshold VIN = 2.5 V to 6.5 V VIH 45 – – %VIN SHDN Input Low Threshold VIN = 2.5 V to 6.5 V VIL – – 15 %VIN – VINMIN 1.0 – – V Output Logic Low Voltage 1.0 mA Flows to ERROR VOL – – 400 mV ERROR Threshold Voltage See Figure 3 VTH – 0.95 x VR – V ERROR Positive Hysteresis Note 9. VHYS – 50 – mV Dropout Voltage NCP4555, NCP4586 NCP4586 Power Supply Rejection Ratio Output Noise SHDN Input ERROR Output Minimum VIN Operating Voltage 3. VR is the regulator output voltage setting. For example: VR = 2.5 V, 2.7 V, 2.85 V, 3.0 V, 3.3 V, 3.6 V, 4.0 V, 5.0 V. 4. TC VOUT = (VOUTMAX VOUTMIN) 106 VOUT T 5. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 6. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. 7. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6.0 V for T = 10 msec. 8. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature, and the thermal resistance from junction–to–air (i.e. TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Thermal Considerations section of this data sheet for more details. 9. Hysteresis voltage is referenced by VR. 10. Apply for Junction Temperatures of –40°C to +85°C. http://onsemi.com 3 NCP4555, NCP4586 PIN DESCRIPTION Pin Number Symbol 1 VIN 2 GND 3 SHDN 4 ERROR 5 VOUT Description Unregulated supply input. Ground terminal. Shutdown control input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero, ERROR is open circuited and supply current is reduced to 0.5 µA (max). Out–of–Regulation Flag. (Open drain output). This output goes low when VOUT is out–of–tolerance by approximately –5.0%. Regulated voltage output. DETAILED DESCRIPTION Figure 2 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN) is at or above VIH, and shutdown (disabled) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate, or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, supply current decreases to 0.05 µA (typical), VOUT falls to zero volts, and ERROR is open–circuited. The NCP4555 and NCP4586 are precision fixed output voltage regulators. Unlike bipolar regulators, the NCP4555 and NCP4586 supply current does not increase with load current. In addition, VOUT remains stable and within regulation at very low load currents (an important consideration in RTC and CMOS RAM battery back–up applications). + VIN VOUT 1 µF C1 1 µF + BATTERY NCP4555 GND NCP4586 ERROR SHDN Shutdown Control (to CMOS Logic or Tie to VIN if unused) VOUT + V+ C2 Required Only if ERROR is used as a Processor RESET Signal (See Text) R1 1M BATTLOW or RESET + C2 0.2 µF Figure 2. Typical Application Circuit ERROR Open Drain Output ERROR is driven low whenever VOUT falls out of regulation by more than –5.0% (typical). This condition may be caused by low input voltage, output current limiting, or thermal limiting. The ERROR threshold is 5.0% below rated VOUT regardless of the programmed output voltage value (e.g. ERROR = VOL at 4.75 V (typ.) for a 5.0 V regulator and 2.85 V (typ.) for a 3.0 V regulator). ERROR output operation is shown in Figure 3. Note that ERROR is active when VOUT falls to VTH, and inactive when VOUT rises above VTH by VHYS. As shown in Figure 2, ERROR can be used as a battery low flag, or as a processor RESET signal (with the addition of timing capacitor C2). R1 x C2 should be chosen to maintain ERROR below VIH of the processor RESET input for at least 200 msec to allow time for the system to stabilize. Pull–up resistor R1 can be tied to VOUT, VIN or any other voltage less than (VIN + 0.3 V). http://onsemi.com 4 NCP4555, NCP4586 The maximum allowable power dissipation (Equation 2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (125°C), and the thermal resistance from junction–to–air (JA). The 5–Pin SOT–23 package has a JA of approximately 200C/Watt when mounted on a single layer FR4 dielectric copper clad PC board. VOUT HYSTERESIS (VHYS) VTH ERROR VIH PDMAX VOL (TJMAX TAMAX) JA Where all terms are previously defined. Figure 3. ERROR Output Operation (eq. 2) Equation 1 can be used in conjunction with Equation 2 to ensure regulator thermal operation is within limits. For example: Output Capacitor A 1.0 µF (min) capacitor from VOUT to ground is recommended. The output capacitor should have an effective series resistance of 5.0 Ω or less, and a resonant frequency above 1.0 MHz. A 1.0 µF capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately –30°C, solid tantalums are recommended for applications operating below –25°C.) When operating from sources other than batteries, supply–noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. GIVEN : FIND : VINMAX 3.0 V 5.0% VOUTMIN 2.7 V 2.5% ILOAD 40 mA TAMAX 55°C 1. Actual power dissipation. 2. Maximum allowable dissipation. Actual power dissipation : PD (VINMAX VOUTMIN)ILOADMAX [(3.0 1.05) (2.7 .975)] 40 10 3 20.7 mW Maximum allowable power dissipation : PDMAX Thermal Considerations Thermal Shutdown (TJMAX TAMAX) JA (125 55) 220 Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 318 mW In this example, the NCP4555 dissipates a maximum of only 20.7 mW; far below the allowable limit of 318 mW. In a similar manner, Equation 1 and Equation 2 can be used to calculate maximum current and/or input voltage limits. Power Dissipation The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation: Layout Considerations The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower JA and, therefore, increase the maximum allowable power dissipation limit. PD (VINMAX VOUTMIN)ILOADMAX PD worst case actual power dissipation VINMAX maximum voltage on VIN VOUTMIN minimum regulator output voltage ILOADMAX maximum output (load) current Where : (eq. 1) http://onsemi.com 5 NCP4555, NCP4586 TYPICAL CHARACTERISTICS (Unless otherwise specified, all parts are measured at Temperature = 25°C) 0.020 0.100 ILOAD = 10 mA 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 CIN = 1 µF COUT = 1 µF –20 0 20 50 70 0.030 CIN = 1 µF COUT = 1 µF 0.020 –40 –20 0 20 50 70 125 Figure 5. Dropout Voltage vs. Temperature (VOUT = 3.3 V) 0.300 ILOAD = 150 mA ILOAD = 100 mA DROPOUT VOLTAGE (V) DROPOUT VOLTAGE (V) 0.040 Figure 4. Dropout Voltage vs. Temperature (VOUT = 3.3 V) 0.120 0.100 0.080 0.060 CIN = 1 µF COUT = 1 µF 0.000 0.250 0.200 0.150 0.100 CIN = 1 µF COUT = 1 µF 0.050 0.000 –40 –20 0 20 50 70 125 –40 –20 0 20 50 70 125 TEMPERATURE (°C) TEMPERATURE (°C) Figure 6. Dropout Voltage vs. Temperature (VOUT = 3.3 V) Figure 7. Dropout Voltage vs. Temperature (VOUT = 3.3 V) 90 90 80 80 ILOAD = 10 mA ILOAD = 100 mA 70 70 GND CURRENT (µA) GND CURRENT (µA) 0.050 TEMPERATURE (°C) 0.140 0.020 0.060 TEMPERATURE (°C) 0.160 0.040 0.070 0.000 125 0.200 0.180 0.080 0.010 0.000 –40 ILOAD = 50 mA 0.090 DROPOUT VOLTAGE (V) DROPOUT VOLTAGE (V) 0.018 60 50 40 30 20 CIN = 1 µF COUT = 1 µF 10 60 50 40 30 20 CIN = 1 µF COUT = 1 µF 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) VIN (V) Figure 8. Ground Current vs. VIN (VOUT = 3.3 V) Figure 9. Ground Current vs. VIN (VOUT = 3.3 V) http://onsemi.com 6 NCP4555, NCP4586 TYPICAL CHARACTERISTICS (Unless otherwise specified, all parts are measured at Temperature = 25°C) 80 3.5 ILOAD = 150 mA ILOAD = 0 mA 3 60 2.5 50 VOUT (V) GND CURRENT (µA) 70 40 30 2 1.5 1 20 CIN = 1 µF COUT = 1 µF 10 CIN = 1 µF COUT = 1 µF 0.5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V) VIN (V) Figure 10. Ground Current vs. VIN (VOUT = 3.3 V) Figure 11. VOUT vs. VIN (VOUT = 3.3 V) 3.320 3.5 ILOAD = 100 mA 3.315 3.0 ILOAD = 10 mA 3.310 3.305 VOUT (V) VOUT (V) 2.5 2.0 1.5 3.300 3.295 3.290 1.0 3.285 CIN = 1 µF COUT = 1 µF 0.5 3.280 0.0 3.275 –40 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 20 40 85 125 Figure 13. Output Voltage vs. Temperature (VOUT = 3.3 V) 5.025 ILOAD = 10 mA 5.020 3.286 5.015 3.284 5.010 VOUT (V) VOUT (V) 0 Figure 12. VOUT vs. VIN (VOUT = 3.3 V) 3.288 3.282 3.280 3.274 –10 TEMPERATURE (°C) ILOAD = 150 mA 3.276 –20 VIN (V) 3.290 3.278 CIN = 1 µF COUT = 1 µF VIN = 4.3 V –20 5.000 4.995 CIN = 1 µF COUT = 1 µF VIN = 4.3 V –40 5.005 4.990 4.985 –10 0 20 40 85 VIN = 6 V COUT = 1 µF CIN = 1 µF –40 125 –20 –10 0 20 40 85 125 TEMPERATURE (°C) TEMPERATURE (°C) Figure 14. Output Voltage vs. Temperature (VOUT = 3.3 V) Figure 15. Output Voltage vs. Temperature (VOUT = 5 V) http://onsemi.com 7 NCP4555, NCP4586 TYPICAL CHARACTERISTICS (Unless otherwise specified, all parts are measured at Temperature = 25°C) 4.994 70 ILOAD = 150 mA 4.992 ILOAD = 10 mA 60 GND CURRENT (µA) 4.990 VOUT (V) 4.988 4.986 4.984 4.982 4.980 VIN = 6 V COUT = 1 µF CIN = 1 µF 4.978 4.976 50 40 30 20 VIN = 6 V COUT = 1 µF CIN = 1 µF 10 0 4.974 –40 –20 –10 0 20 40 85 125 –40 –20 –10 0 20 40 85 125 TEMPERATURE (°C) TEMPERATURE (°C) Figure 16. Output Voltage vs. Temperature (VOUT = 5 V) Figure 17. Temperature vs. Quiescent Current (VOUT = 5 V) 80 10.0 ILOAD = 150 mA 60 NOISE (µV/√Hz) GND CURRENT (µA) 70 50 40 30 0.1 20 RLOAD = 50 Ω COUT = 1 µF CIN = 1 µF VIN = 6 V COUT = 1 µF CIN = 1 µF 10 0 –40 –20 –10 0 20 40 85 0.0 0.01 k 125 0.1 k 1k 10 k 100 k 1000 k TEMPERATURE (°C) FREQUENCY (Hz) Figure 18. Temperature vs. Quiescent Current (VOUT = 5 V) Figure 19. Output Noise vs. Frequency 1000 –30 COUT = 1 µF to 10 µF –35 –40 100 –45 10 PSRR (dB) COUT ESR (Ω) 1.0 Stable Region 1 –50 IOUT = 10 mA VINDC = 4 V VINAC = 100 mV p–p VOUT = 3 V CIN = 0 COUT = 1 µF –55 –60 –65 –70 0.1 –75 0.01 0 10 20 30 40 50 60 70 80 90 100 –80 0.01 k 0.1 k 1k 10 k 100 k 1000 k LOAD CURRENT (mA) FREQUENCY (Hz) Figure 20. Stability Region vs. Load Current Figure 21. Power Supply Rejection Ratio http://onsemi.com 8 NCP4555, NCP4586 Conditions: CIN = 1 µF, COUT = 1 µF, ILOAD = 100 mA, VIN = 4.3 V, Temp = 25°C, Rise Time = 184 µS Conditions: CIN = 1 µF, COUT = 1 µF, ILOAD = 100 mA VIN = 6 V, Temp = 25°C, Rise Time = 192 µS Figure 22. Measure Rise Time of 3.3 V LDO Figure 23. Measure Rise Time of 5.0 V LDO Conditions: CIN = 1 µF, COUT = 1 µF, ILOAD = 100 mA VIN = 4.3 V, Temp = 25°C, Fall Time = 52 µS Conditions: CIN = 1 µF, COUT = 1 µF, ILOAD = 100 mA VIN = 6 V, Temp = 25°C, Fall Time = 88 µS Figure 25. Measure Fall Time of 5.0 V LDO Figure 24. Measure Fall Time of 3.3 V LDO http://onsemi.com 9 NCP4555, NCP4586 ILOAD was increased until temperature of die reached about 160°C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160°C. The regulator remains off until die temperature drops to approximately 150°C. Conditions: VIN = 6 V, CIN = 0 µF, COUT = 1 µF Figure 26. Thermal Shutdown Response of 5.0 V LDO Component Taping Orientation for 5–Pin SOT–23 Devices USER DIRECTION OF FEED DEVICE MARKING PIN 1 Standard Reel Component Orientation TR Suffix Device (Mark Right Side Up) PIN 1 USER DIRECTION OF FEED DEVICE MARKING W P Reverse Reel Component Orientation RT Suffix Device (Mark Upside Down) Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT–23 8 mm 4 mm 3000 7 inches http://onsemi.com 10 NCP4555, NCP4586 MARKING DIAGRAM 1 2 3 4 1 and 2 3 = Two Letter Part Number Codes + Temperature Range and Voltage = Year and Quarter Code 4 = Lot ID Number ORDERING INFORMATION Marking Voltage Option* 1 and 2 NCP4555SNxxT1 1.8 2.8 2.85 3.0 3.3 DY DZ D8 D3 D5 NCP4586SNxxT1 2.5 2.7 2.8 2.85 3.0 3.3 3.6 4.0 5.0 P1 P2 PZ P8 P3 P5 P9 P0 P7 Device Package Junction Temperature Range Shipping SOT–23 –40°C to + 125°C 3000 Tape & Reel xx Indicates Output Voltages *Other output voltages are available. Please contact ON Semiconductor for details. http://onsemi.com 11 NCP4555, NCP4586 PACKAGE DIMENSIONS SOT–23 SN SUFFIX CASE 1212–01 ISSUE O A B D 5 E 1 A2 0.05 S A1 4 2 L 3 E1 L1 B e e1 NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM C IS A SEATING PLANE. C 5X 0.10 M C B S A C S DIM A1 A2 B C D E E1 e e1 L L1 MILLIMETERS MIN MAX 0.00 0.10 1.00 1.30 0.30 0.50 0.10 0.25 2.80 3.00 2.50 3.10 1.50 1.80 0.95 BSC 1.90 BSC 0.20 --0.45 0.75 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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