DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 31.5 dBm output power with 62% power added efficiency at 900 MHz as AMPS final output stage amplifier under the 3.5 V supply voltage. It also can deliver 35 dBm output power with 62% power added efficiency at 4.8 V, as GSM 900 class 4 final stage amplifiers. FEATURES • High output power : Pout = 31.5 dBm TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 20 dBm) • High power added efficiency : ηadd = 62% TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 20 dBm) • High linear gain • Surface mount package : GL = 15.0 dB TYP. (VDS = 3.5 V, IDset = 300 mA, f = 900 MHz, Pin = 10 dBm) : 5.7 × 5.7 × 1.1 mm MAX. • Single supply : VDS = 3.0 to 6.0 V APPLICATIONS • Analog cellular phones : 3.5 V AMPS handsets • Digital cellular phones : 4.8 V GSM 900 class 4 handsets • Others : General purpose amplifiers for 800 to 1 000 MHz TDMA applications ORDERING INFORMATION Part Number NE5500479A-T1 Package Marking 79A R4 Supplying Form • 12 mm wide embossed taping • Gate pin face the perforation side of the tape • Qty 1 kpcs/reel Remark To order evaluation samples, consult your NEC sales representative. Part number for sample order: NE5500479A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10119EJ02V0DS (2nd edition) Date Published September 2002 CP(K) Printed in Japan The mark ! shows major revised points. NEC Corporation 1999 NEC Compound Semiconductor Devices 2002 NE5500479A ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 20.0 V Gate to Source Voltage VGS 5.0 V Drain Current IDS 1.0 A IDS Note 2.0 A Total Power Dissipation Ptot 10 W Channel Temperature Tch 125 °C Storage Temperature Tstg −65 to +125 °C Drain Current (Pulse Test) Note Duty Cycle ≤ 50%, Ton ≤ 1 s RECOMMENDED OPERATING CONDITIONS Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Drain to Source Voltage VDS 3.0 3.5 6.0 V Gate to Source Voltage VGS 0 2.0 3.5 V Drain Current IDS − 600 700 mA Input Power Pin 18 20 22 dBm MIN. TYP. MAX. Unit f = 900 MHz, VDS = 3.5 V ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions Gate to Source Leak Current IGSS VGSS = 5.0 V − − 100 nA Saturated Drain Current (Zero Gate Voltage Drain Current) IDSS VDSS = 8.5 V − − 100 nA Gate Threshold Voltage Vth VDS = 4.8 V, IDS = 1 mA 1.0 1.35 2.0 V Transconductance gm VDS = 4.8 V, IDS = 600 mA − 1.43 − S IDSS = 10 µA 20 24 − V Drain to Source Breakdown Voltage BVDSS Thermal Resistance Rth Channel to Case − 10 − °C/W Linear Gain GL f = 900 MHz, Pin = 10 dBm, VDS = 3.5 V, IDset = 300 mA, Note − 15.0 − dB Output Power Pout f = 900 MHz, Pin = 20 dBm, 30.5 31.5 − dBm Operating Current Iop VDS = 3.5 V, IDset = 300 mA, Note − 600 − mA 55 62 − % Power Added Efficiency ηadd Note DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2 Data Sheet PU10119EJ02V0DS NE5500479A TYPICAL CHARACTERISTICS (TA = +25°C) SET DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Set Drain Current IDset (mA) VDS = 3.5 V 10.0 8.0 6.0 4.0 2.0 2 0 8 10 12 14 10 1 1.0 16 1.5 2.0 2.5 3.0 Gate to Source Voltage VGS (V) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER Pout 1 000 750 25 IDS 20 500 250 15 10 0 5 10 15 20 25 Drain Current IDS (mA) 30 100 1 250 VDS = 3.5 V IDset = 300 mA f = 900 MHz 0 30 VDS = 3.5 V IDset = 300 mA f = 900 MHz ηd η add 50 0 5 10 15 20 25 30 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 32 31 VDS = 3.5 V f = 900 MHz Pin = 20 dBm 1 000 750 30 29 500 IDS 250 28 27 0.0 1.0 100 1 250 Pout 2.0 3.0 0 4.0 Drain Current IDS (mA) Output Power Pout (dBm) 6 100 Drain to Source Voltage VDS (V) 35 Output Power Pout (dBm) 4 1 000 Drain Efficiency η d (%) Power Added Efficiency η add (%) Drain Current IDS (A) 12.0 10 000 VGS = 10 V MAX. Step = 1.0 V Drain Efficiency η d (%) Power Added Efficiency η add (%) 14.0 VDS = 3.5 V f = 900 MHz Pin = 20 dBm ηd η add 50 0 Gate to Source Voltage VGS (V) 1.0 2.0 3.0 4.0 Gate to Source Voltage VGS (V) Data Sheet PU10119EJ02V0DS 3 NE5500479A DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 750 20 500 IDS 250 15 5 10 15 20 25 Drain Efficiency η d (%) Power Added Efficiency η add (%) 1 000 25 10 0 0 30 VDS = 3.0 V IDset = 300 mA f = 900 MHz ηd 0 5 10 15 20 25 30 Input Power Pin (dBm) OUTPUT POWER, DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE VDS = 3.0 V f = 900 MHz Pin = 20 dBm Pout 1 000 750 29 28 500 IDS 250 27 1.0 100 1 250 2.0 3.0 0 4.0 Drain Efficiency η d (%) Power Added Efficiency η add (%) 30 26 0.0 VDS = 3.0 V f = 900 MHz Pin = 20 dBm ηd η add 50 0 Gate to Source Voltage VGS (V) 1.0 2.0 3.0 Gate to Source Voltage VGS (V) Remark The graphs indicate nominal characteristics. 4 η add 50 Input Power Pin (dBm) 31 Output Power Pout (dBm) Pout Drain Current IDS (mA) 30 100 1 250 VDS = 3.0 V IDset = 300 mA f = 900 MHz Drain Current IDS (mA) Output Power Pout (dBm) 35 Data Sheet PU10119EJ02V0DS 4.0 NE5500479A S-PARAMETERS Test Conditions: VDS = 3.5 V, IDset = 400 mA S11 Frequency GHz MAG. ANG. dB S21 MAG. ANG. 9.13 4.65 3.05 2.24 1.79 1.44 1.23 1.04 0.92 0.81 S22 MAG Note MSG Note dB dB dB S12 MAG. ANG. MAG. ANG. 98.9 87.0 81.5 75.8 71.2 67.3 63.2 59.8 55.8 52.9 −33.2 −33.2 −32.8 −33.6 −33.6 −34.0 −34.4 −35.4 −35.9 −35.9 0.022 0.022 0.023 0.021 0.021 0.020 0.019 0.017 0.016 0.016 11.2 0.7 −3.5 −8.4 −12.0 −14.6 −13.6 −16.5 −19.3 −19.2 0.850 0.858 0.871 0.869 0.883 0.884 0.891 0.895 0.908 0.924 −172.8 −177.0 −178.4 −179.5 174.0 172.1 171.2 169.9 169.2 167.6 166.8 164.6 163.4 162.0 13.3 11.7 10.6 9.3 7.5 8.4 6.8 7.1 0.17 0.59 1.33 1.77 1.98 2.89 4.24 3.75 5.76 4.48 160.2 158.4 156.3 154.4 152.8 150.7 148.4 146.4 145.0 143.2 5.1 4.7 3.8 4.9 2.8 3.4 0.6 2.7 1.0 1.1 14.50 10.94 9.72 5.56 11.15 8.02 9.33 6.13 6.33 5.81 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.873 0.859 0.859 0.857 0.858 0.864 0.870 0.886 0.890 0.903 −151.3 −166.3 −171.8 −174.6 −176.5 −178.2 −179.3 179.2 178.1 176.3 19.2 13.3 9.7 7.0 5.1 3.2 1.8 0.3 −0.7 −1.8 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.915 0.911 0.905 0.902 0.902 0.905 0.904 0.914 0.905 0.910 174.0 172.0 170.6 169.2 167.8 166.3 164.4 162.8 160.4 158.7 −2.7 −3.9 −4.9 −5.7 −6.6 −7.3 −8.4 −8.9 −9.6 −9.9 0.73 0.64 0.57 0.52 0.47 0.43 0.38 0.36 0.33 0.32 48.2 45.9 41.3 39.6 36.0 35.0 32.1 29.4 26.6 24.9 −37.1 −37.1 −38.4 −39.2 −39.2 −40.9 −41.9 −43.1 −44.4 −43.1 0.014 0.014 0.012 0.011 0.011 0.009 0.008 0.007 0.006 0.007 −27.6 −19.3 −22.5 −21.5 −24.3 −25.7 −18.7 −9.0 −15.5 0.1 0.934 0.922 0.915 0.917 0.919 0.917 0.912 0.927 0.925 0.928 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 0.910 0.910 0.912 0.909 0.911 0.916 0.909 0.911 0.917 0.917 155.6 154.2 152.2 149.7 147.5 145.3 143.2 141.1 138.9 137.1 −11.1 −11.7 −12.8 −12.4 −13.6 −13.6 −15.4 −14.9 −15.9 −16.5 0.28 0.26 0.23 0.24 0.21 0.21 0.17 0.18 0.16 0.15 22.8 21.1 17.5 16.4 14.4 13.7 12.5 8.5 8.9 8.3 −50.5 −48.0 −46.0 −43.1 −46.0 −44.4 −41.9 −41.9 −40.0 −40.0 0.003 0.004 0.005 0.007 0.005 0.006 0.008 0.008 0.010 0.010 11.1 12.7 39.4 37.7 48.9 43.4 73.4 68.2 76.4 68.2 0.922 0.926 0.925 0.936 0.923 0.928 0.917 0.939 0.925 0.935 Note When K ≥ 1, the MAG (Maximum Available Gain) is used. When K < 1, the MSG (Maximum Stable Gain) is used. K 26.2 23.3 21.2 20.3 19.3 18.6 18.1 17.9 17.6 17.0 179.5 179.0 178.4 177.6 177.0 175.4 0.03 0.21 0.31 0.43 0.44 0.21 17.2 16.6 MAG = S21 S12 (K – √ (K – 1) ) MSG = S21 S12 ,K= 2 1+∆ −S11 −S22 , 2 ⋅S12⋅S21 2 2 2 ∆ = S11 ⋅ S22 − S21 ⋅ S12 LARGE SIGNAL IMPEDANCE (VDS = 3.5 V, IDset = 300 mA, Pin = 20 dBm) f (MHz) Zin (Ω) ZOL (Ω) Note 900 TBD TBD Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency. Data Sheet PU10119EJ02V0DS 5 NE5500479A PACKAGE DIMENSIONS 79A (UNIT: mm) Gate Drain 0.4±0.15 0.8 MAX. 5.7 MAX. 0.9±0.2 0.2±0.1 3.6±0.2 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain 1.2 0.5 1.0 5.9 Gate Through Hole: φ 0.2 × 33 0.5 0.5 6.1 6 Data Sheet PU10119EJ02V0DS 1.2 MAX. 1.0 MAX. 0.8±0.15 Drain 4.4 MAX. Source 2 Source 9 1.5±0.2 4 4.2 MAX. R Gate 0.6±0.15 5.7 MAX. (Bottom View) NE5500479A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow VPS Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C : 10 seconds or less : 60 seconds or less : 120±30 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 3 times : 0.2%(Wt.) or below Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C : 215°C or below : 25 to 40 seconds : 30 to 60 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 3 times : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below IR260 VP215 WS260 Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 1 time : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350°C or below Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 3 seconds or less : 0.2%(Wt.) or below HS350-P3 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10119EJ02V0DS 7 NE5500479A • The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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M8E 00. 4 - 0110 8 Data Sheet PU10119EJ02V0DS NE5500479A Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected] NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: [email protected] FAX: +81-44-435-1918 0209