OM6508SA OM6509SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package FEATURES • • • • • • • • • Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available Screened To MIL-S-19500, TX, TXV And S Levels Free Wheeling Diode Ceramic Feedthroughs Available DESCRIPTION This power module includes an IGBT power transistor which features a high impedance insulated gate and the low on-resistance characteristics of bipolar transistor with a free wheeling diode connected across the emitter and collector. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise PART NUMBER OM6508SA OM6509SA IC (Cont.) @ 90°C, A 5 10 V(BR)CES V 500 500 VCE (sat) (Typ.) V 2.8 2.8 SCHEMATIC Tf (Typ.) ns 400 400 PD W 35 42 qJC °C/W 3.8 3.0 MECHANICAL OUTLINE Collector .545 .535 .144 DIA. .050 .040 .800 .790 .685 .665 1 C 2 E .550 .530 3 G PIN CONNECTION Gate Pin 1: Collector Pin 2: Emitter Pin 3: Gate .550 .510 .005 .045 .035 Emitter .150 TYP. .150 TYP. .260 .249 PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA. IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 4 11 R2 Supersedes 2 07 R1 3.1 - 147 TJ °C 150 150 3.1 PRELIMINARY DATA: OM6509SA IGBT CHARACTERISTICS IGBT CHARACTERISTICS Parameter - OFF (see Note 1) Min. Typ. Max. Units Test Conditions Parameter - OFF (see Note 1) Min. Typ. Max. Units Test Conditions V(BR)CES Collector Emitter 500 V(BR)CES Collector Emitter 500 V Breakdown Voltage ICES VCE = 0 Zero Gate Voltage 0.25 mA Drain Current 1.0 mA VCE = Max. Rat., VGE = 0 V Breakdown Voltage IC = 250 µA ICES VCE = 0.8 Max. Rat., VGE = 0 IC = 250 µA Zero Gate Voltage 0.25 mA Drain Current 1.0 mA 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Gate Emitter Leakage ±100 nA Current VGE = ±20 V Gate Threshold Voltage IGES Gate Emitter Leakage ±100 nA Current VCE = 0 V VCE = 0.8 Max. Rat., VGE = 0 VGE = ±20 V VCE = 0 V Parameter - ON Parameter - ON VGE(th) VCE = Max. Rat., VGE = 0 TC = 125°C TC = 125°C IGES VCE = 0 2.0 VCE(sat) Collector Emitter 4.0 3.0 V VCE = VGE, IC = 250 µA VGE(th) V VGE = 15 V, IC = 5 A VCE(sat) Collector Emitter Saturation Voltage VCE(sat) Collector Emitter TC = 25°C 2.8 3.0 V Saturation Voltage VGE = 15 V, IC = 5 A 2.0 4.0 V VCE = VGE, IC = 250 µA 3.0 2.7 V VGE = 15 V, IC = 10 A 2.8 3.0 V VGE = 15 V, IC = 10 A Saturation Voltage TC = 25°C VCE(sat) Collector Emitter TC = 100°C Dynamic Gate Threshold Voltage Saturation Voltage TC = 100°C Dynamic gfs Forward Transductance 2.0 S VCE = 20 V, IC = 5 A gfs Forward Transductance Cies Input Capacitance 260 pF VGE = 0 Cies Input Capacitance 950 pF VGE = 0 Coes Output Capacitance 50 pF VCE = 25 V Coes Output Capacitance 140 pF VCE = 25 V Cres Reverse Transfer Capacitance 20 pF f = 1 mHz Cres Reverse Transfer Capacitance 80 pF f = 1 mHz nS Switching-Resistive Load 2.5 S VCE = 20 V, IC = 10 A Switching-Resistive Load Td(on) Turn-On Time 37 nS VCC = 400 V, IC = 5 A Td(on) Turn-On Time 150 tr Rise Time 150 nS VGE = 15 V, Rg = 47 Tr Rise Time 1000 nS VCC = 400 V, IC = 10 A Td(off) Turn-Off Delay Time 700 nS VGE = 15 V, Rg = 100 Tf Fall Time 1500 nS Switching-Inductive Load tr(Volt) Off Voltage Rise Time .35 µS VCEclamp = 400 V, IC = 5 A tf Fall Time .81 µS VGE = 15 V, Rg = 100 tcross Cross-Over Time 1.2 µS L = 0.1 mH, Tj = 100°C Eoff Turn-Off Losses .95 mJ DIODE CHARACTERISTICS Vf Ir trr Maximum Forward Voltage Maximum Reverse Current Reverse Recovery Time 1.5 V IF = 8 A, TC = 25°C 1.4 V IF = 8 A, TC = 150°C 150 µA VR = 600 V, TC = 25°C 1.5 mA VR = 480 V, TC = 125°C 35 nS IF = 1 A, di / dt = -15 A µ/S Switching-Inductive Load Td(off) Turn-Off Delay Time 1.2 µS tf Fall Time 1.5 µS VGE = 15 V, Rg = 100 tcross Cross-Over Time 2.0 µS L = 180 µH, Tj = 100°C Eoff Turn-Off Losses 4.0 mJ 1.4 V 1.5 V IF = 16 A, TC = 150°C 500 µA VR = 600 V, TC = 25°C 3.0 mA VR = 480 V, TC = 125°C 35 nS IF = 1 A, di / dt = -15 A µ/S VCEclamp = 350 V, IC = 10 A DIODE CHARACTERISTICS Vf Maximum Forward Voltage Ir Maximum Reverse Current trr Reverse Recovery Time VR = 30 V, Tj = 25°C IF = 16 A, TC = 25°C VR = 30 V, Tj = 25°C Note 1: Limited by diode Ir characteristic. Note 1: Limited by diode Ir characteristic. OM6508SA - OM6509SA 3.1 PRELIMINARY DATA: OM6508SA