ETC PBSS5350SA

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PBSS5350SA
50 V low VCEsat PNP transistor
Objective specification
2002 Oct 22
Philips Semiconductors
Objective specification
50 V low VCEsat PNP transistor
PBSS5350SA
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat and
corresponding RCEsat
SYMBOL
• High collector current capability IC and ICM
• High collector current gain hFE
• Less heat generation leading to higher efficiency.
APPLICATIONS
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
−50
V
IC
collector current (DC)
−2
A
ICRP
repetitive peak collector
current
−3
A
RCEsat
equivalent on-resistance
135
mΩ
PINNING
• Low and medium power DC/DC convertors
PIN
• Low voltage regulation (LDO)
DESCRIPTION
• MOSFET drivers
1
collector
• Supply line switching
2
base
• Battery chargers.
3
emitter
DESCRIPTION
PNP low VCEsat transistor in a SOT54 plastic package.
NPN complement: PBSS4350SA.
handbook, halfpage1
MARKING
1
2
3
2
TYPE NUMBER
PBSS5350SA
MARKING CODE
5350SA
MAM280
Fig.1
2002 Oct 22
2
3
Simplified outline (SOT54) and symbol.
Philips Semiconductors
Objective specification
50 V low VCEsat PNP transistor
PBSS5350SA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−2
A
ICRP
repetitive peak collector current
note 1
−
−3
A
ICM
peak collector current
single peak
−
−5
A
IB
base current (DC)
−
−0.5
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
−
830
mW
Tamb ≤ 25 °C; note 3
−
900
mW
Tamb ≤ 25 °C; notes 1 and 2
−
1.2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
in free air; notes 1 and 2
104
K/W
in free air; note 3
127
K/W
in free air; note 2
150
K/W
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2002 Oct 22
3
Philips Semiconductors
Objective specification
50 V low VCEsat PNP transistor
PBSS5350SA
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
collector-base cut-off current VCB = −50 V; IE = 0
MIN.
TYP.
MAX.
−
−
−100
nA
VCB = −50 V; IE = 0; Tj = 150 °C
−
−
−50
µA
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−100
hFE
DC current gain
VCE = −2 V; IC = −100 mA
200
−
−
VCE = −2 V; IC = −500 mA
200
−
−
VCE = −2 V; IC = −1 A; note 1
200
−
−
VCE = −2 V; IC = −2 A; note 1
130
−
−
VCE = −2 V; IC = −3 A; note 1
80
−
−
IC = −500 mA; IB = −50 mA
−
−
−90
VCEsat
collector-emitter saturation
voltage
UNIT
mV
IC = −1 A; IB = −50 mA
−
−
−180
mV
IC = −2 A; IB = −100 mA; note 1
−
−
−320
mV
IC = −2 A; IB = −200 mA; note 1
−
−
−270
mV
IC = −3 A; IB = −300 mA; note 1
−
−
−390
mV
RCEsat
equivalent on-resistance
IC = −2 A; IB = −200 mA; note 1
−
90
135
mΩ
VBEsat
base-emitter saturation
voltage
IC = −2 A; IB = −100 mA; note 1
−
−
−1.1
V
IC = −3 A; IB = −300 mA; note 1
−
−
−1.2
V
VBEon
base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1
−
−
−1.2
V
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
35
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2002 Oct 22
4
Philips Semiconductors
Objective specification
50 V low VCEsat PNP transistor
PBSS5350SA
MLD885
1000
MLD886
−1200
handbook, halfpage
handbook, halfpage
hFE
VBE
(mV)
800
(1)
−800
(1)
(2)
600
400
(3)
(2)
−400
(3)
200
0
−10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
−1
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD887
−1300
−10
−102
Base-emitter voltage as a function of
collector current; typical values.
MLD888
−1300
handbook, halfpage
−103
−104
IC (mA)
handbook, halfpage
VBEsat
VBEsat
(mV)
(mV)
(1)
−900
−900
(1)
(2)
(2)
(3)
(3)
−500
−500
−100
−10−1
−1
−10
−102
−100
−10−1
−103
−104
IC (mA)
−1
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Oct 22
5
−10
−102
−103
−104
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Objective specification
50 V low VCEsat PNP transistor
PBSS5350SA
MLD889
−103
handbook, halfpage
MLD890
−103
handbook, halfpage
VCEsat
VCEsat
(mV)
(mV)
−102
−102
(1)
(2)
(3)
(1)
−10
(2)
−10
(3)
−1
−10−1
−1
−10
−102
−1
−10−1
−103
−104
IC (mA)
−1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD891
−104
handbook, halfpage
−10
−102
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD892
−104
handbook, halfpage
VCEsat
−103
−104
IC (mA)
VCEsat
(mV)
(mV)
−103
−103
−102
(1)
(2)
−102
(3)
(1)
−10
(3) (2)
−1
−−10−1
−1
−10
−102
−10
−10−1
−103
−104
IC (mA)
−1
IC/IB = 50.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 100.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2002 Oct 22
6
−10
−102
−103
−104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Objective specification
50 V low VCEsat PNP transistor
PBSS5350SA
MLD893
103
handbook, halfpage
RCEsat
(Ω)
102
10
1
(1)
10−1
(2)
(3)
10−2 −1
−10
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2002 Oct 22
7
Philips Semiconductors
Objective specification
50 V low VCEsat PNP transistor
PBSS5350SA
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2002 Oct 22
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
8
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Objective specification
50 V low VCEsat PNP transistor
PBSS5350SA
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Oct 22
9
Philips Semiconductors
Objective specification
50 V low VCEsat PNP transistor
PBSS5350SA
NOTES
2002 Oct 22
10
Philips Semiconductors
Objective specification
50 V low VCEsat PNP transistor
PBSS5350SA
NOTES
2002 Oct 22
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp12
Date of release: 2002
Oct 22
Document order number:
9397 750 10215