ETC UMC4N

EMC4 / UMC4N / FMC4A
Transistors
Power management
(dual digital transistors)
EMC4 / UMC4N / FMC4A
zExternal dimensions (Units : mm)
zStructure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type.)
0.5 0.5
1.0
1.6
0.22
EMC4
(3)
(4)
(2)
(5)
1.2
1.6
(1)
0.5
0.13
zFeatures
1) Both the DTA114Y chip and DTC114E chip in a EMT
or UMT or SMT package.
2) Ideal for power switch circuits.
3) Mounting cost and area can be cut in half.
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : C4
1.3
2.0
0.65 0.65
(1)
(5)
zEquivalent circuit
(2)
0.2
(4)
(3)
UMC4N
1.25
R2
R2
DTr2
R1
(4)
(3)
R1
DTr1
DTr1 R1=47kΩ
R2=47kΩ
DTr2
R1=10kΩ
(5) R2=47kΩ
2.1
(4)
(5)
R2
DTr1
R2
DTr2
R1
(2)
(1)
DTr1
R1=47kΩ
R2=47kΩ
DTr2
R1=10kΩ
R2=47kΩ
0.9
R1
(1)
0.7
(2)
0to0.1
(3)
FMC4A
0.15
EMC4 / UMC4N
0.1Min.
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : C4
2.9
0.8
1.1
(3)
(4)
Taping
(5)
(1)
Package
0.95 0.95
1.9
zPackaging specifications
(2)
0.3
FMC4A
1.6
TR
T148
Basic ordering
unit (pieces)
8000
3000
3000
EMC4
UMC4N
FMC4A
2.8
0.15
T2R
0.3to0.6
0to0.1
Type
Code
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : C4
EMC4 / UMC4N / FMC4A
Transistors
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
VCC
Input voltage
VIN
Unit
DTr1
DTr2
50
−50
40
−40
−10
6
IO
30
−100
IC (Max.)
100
−100
Output current
Power
dissipation
Limits
Symbol
EMC4, UMC4N
V
V
mA
150 (TOTAL)
Pd
FM4A
mW
300 (TOTAL)
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55∼+150
˚C
∗1
∗2
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
zElectrical characteristics (Ta = 25°C)
DTr1
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Symbol
Min.
Typ.
Max.
VI (off)
−
−
0.5
VI (on)
3
−
−
VO (on)
−
0.1
0.3
V
II
−
−
0.18
mA
IO (off)
−
−
0.5
µA
VCC=50V, VI=0V
GI
68
−
−
−
VO=5V, IO=5mA
Unit
V
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
IO=10mA, II=0.5mA
VI=5V
Transition frequency
fT
−
250
−
MHz
Input resistance
R1
32.9
47
61.1
kΩ
VCE=10mA, IE=−5mA, f=100MHz
−
Resistance ratio
R2/R1
0.8
1
1.2
−
−
Symbol
Min.
Typ.
Max.
Unit
VI (off)
−
−
−0.3
VI (on)
−1.4
−
−
VO (on)
−
−0.1
−0.3
V
∗
∗ Transition frequency of the device
DTr2
Parameter
Input voltage
Output voltage
V
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−1mA
IO=−5mA, II=−0.25mA
II
−
−
−0.88
mA
VI=−5V
IO (off)
−
−
−0.5
µA
VCC=−50V, VI=0V
DC current gain
GI
68
−
−
−
VO=−5V, IO=−5mA
Transition frequency
fT
−
250
−
MHz
Input resistance
R1
7
10
13
kΩ
−
Resistance ratio
R2/R1
3.7
4.7
5.7
−
−
Input current
Output current
∗ Transition frequency of the device
VCE=10mA, IE=−5mA, f=100MHz
∗
EMC4 / UMC4N / FMC4A
Transistors
zElectrical characteristic curves
DTr1 (NPN)
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
20
10
Ta=−40˚C
25˚C
100˚C
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
1k
10m
VCC=5V
5m
VO=0.3V
50
2m Ta=100˚C
25˚C
1m
−40˚C
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
50m 100m
200
100
Fig.1 Input voltage vs. output current
(ON characteristics)
Ta=100˚C
25˚C
−40˚C
50
20
10
5
2
0.5
1.0
1.5
2.0
2.5
1
100µ 200µ
3.0
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : IO (A)
VO=5V
500
DC CURRENT GAIN : GI
100
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
DTr2 (PNP)
−100
lO/lI=20
100m
INPUT VOLTAGE : VI (on) (V)
OUTPUT VOLTAGE : VO (on) (V)
200m
Ta=100˚C
25˚C
−40˚C
50m
20m
10m
5m
−20
−10
−5
−2
1m
100µ 200µ
−1
−500m
500µ 1m
2m
5m 10m 20m
−100m
−100µ −200µ −500µ −1m −2m
50m 100m
OUTPUT CURRENT : IO (A)
1k
Fig.5 Input voltage vs. output current
(ON characteristics)
−1000m
lO/lI=20
−500m
OUTPUT VOLTAGE : VO (on) (V)
DC CURRENT GAIN : GI
200
VO=−5V
Ta=100˚C
25˚C
−40˚C
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
500
Ta=−40˚C
25˚C
100˚C
−200m
2m
100
50
20
10
5
2
−200m
−100m
Ta=100˚C
25˚C
−40˚C
−50m
−20m
−10m
−5m
−2m
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.7 DC current gain vs. output
current
−10m
−5m
VO=−0.3V
−50
500m
OUTPUT CURRENT : Io (A)
1
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.8 Output voltage vs. output
current
VCC=−5V
−2m
−1m
−500µ
Ta=100˚C
25˚C
−40˚C
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
−1µ
0
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
INPUT VOLTAGE : VI (off) (V)
Fig.6 Output current vs. input voltage
(OFF characteristics)