ETC UNR6124

Transistors with built-in Resistor
UNR6121/6122/6123/6124/612X/612Y
(UN6121/6122/6123/6124/612X/612Y)
Silicon PNP epitaxial planer transistor
Unit: mm
6.9±0.1
0.15
0.7
1.05 2.5±0.1
(1.45)
±0.05
0.8
4.0
■ Resistance by Part Number
●
●
●
●
●
UNR6121
UNR6122
UNR6123
UNR6124
UNR612X
UNR612Y
2.5±0.5
2.5±0.5
14.5±0.5
+0.1
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
■ Absolute Maximum Ratings
1
2
3
1 : Emitter
2 : Collector
3 : Base
MT-1 Type Pakage
(Ta=25˚C)
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
1.0
+0.1
0.45–0.05
2.5±0.1
●
(R1)
2.2kΩ
4.7KΩ
10kΩ
2.2kΩ
0.27kΩ
3.1kΩ
0.65 max.
0.85
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
MT-1 type package, allowing supply with the radial taping.
0.45–0.05
●
0.8
■ Features
3.5±0.1
For digital circuits
VCEO
–50
V
Collector current
IC
–500
mA
Total power dissipation
PT
600
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
R1
C
B
R2
E
Note.) The Part numbers in the Parenthesis show conventional part number.
1
Transistors with built-in Resistor
■ Electrical Characteristics
UNR6121/6122/6123/6124/612X/612Y
(Ta=25˚C)
Parameter
Symbol
Conditions
min
max
Unit
ICBO
VCB = –50V, IE = 0
–1
ICBO
VCB = –50V, IE = 0
– 0.1
ICEO
VCE = –50V, IB = 0
–1
ICEO
VCE = –50V, IB = 0
– 0.5
IEBO
VEE = –6V, IC = 0
–2
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Collector cutoff current
UNR612X
Collector cutoff current
UNR612X
UNR6121
Emitter
cutoff
current
UNR6123/6124
UNR6122/612Y
50
VCE = –10V, IC = –100mA
Collector to emitter saturation voltage
VCE(sat)
IC = –100mA, IB = –5mA
– 0.25
UNR612X
VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
UNR612Y
VCE(sat)
IC = –50mA, IB = –5mA
– 0.15
UNR6123/6124
UNR612X
60
20
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 500Ω
Output voltage low level
VOL
VCC = –5V, VB = –3.5V, RL = 500Ω
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
–4.9
80
(–30%)
0.27
3.1
Resistance ratio
R1/R2
UNR612Y
Common characteristics chart
PT — Ta
800
Total power dissipation PT (mW)
10
UNR612Y
UNR612X
700
600
500
400
300
200
100
0
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
MHz
4.7
R1
UNR612X
UNR6124
V
2.2
UNR6122
UNR6123
V
V
– 0.2
UNR6121
20
mA
40
hFE
0
µA
–1
UNR6121
Input
resistance
µA
–5
UNR6122/612X/612Y
Forward
current
transfer
ratio
2
typ
(+30%)
kΩ
1.2
0.8
1.0
0.17
0.22
0.27
0.043
0.054
0.065
0.67
Transistors with built-in Resistor
UNR6121/6122/6123/6124/612X/612Y
Characteristics charts of UNR6121
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–200
IB=–1.0mA
–160
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–120
–0.4mA
–80
–0.3mA
–0.2mA
–40
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
–100
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
Collector to emitter voltage VCE (V)
–25˚C
–3
–10
Ta=75˚C
200
100
25˚C
0
–1
–100 –300 –1000
–3
6
4
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
8
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–30
–10000
f=1MHz
IE=0
Ta=25˚C
10
300
Collector current IC (mA)
Cob — VCB
12
VCE=–10V
–25˚C
–0.01
–1
–12
hFE — IC
400
Forward current transfer ratio hFE
–240
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
2
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
–1
–3
–10
–30
–100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR6122
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–250
IB=–1.0mA
–200
–0.9mA
–0.8mA
–0.7mA
–150
–0.6mA
–0.5mA
–100
–0.4mA
–0.3mA
–0.2mA
–50
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
160
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Ta=75˚C
VCE=–10V
Forward current transfer ratio hFE
–300
120
25˚C
80
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
3
Transistors with built-in Resistor
UNR6121/6122/6123/6124/612X/612Y
Cob — VCB
IO — VIN
–10000
20
16
12
8
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
24
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR6123
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–160
–120
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
–100
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
(V)
–3
–30
–25˚C
100
50
0
–1
–100 –300 –1000
–3
16
12
8
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
150
IO — VIN
f=1MHz
IE=0
Ta=25˚C
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
4
–10
–10000
20
25˚C
Collector current IC (mA)
Cob — VCB
24
Ta=75˚C
VCE=–10V
–25˚C
–0.01
–1
–12
hFE — IC
200
Forward current transfer ratio hFE
–240
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
Transistors with built-in Resistor
UNR6121/6122/6123/6124/612X/612Y
Characteristics charts of UNR6124
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
–250
IB=–1.0mA
–200
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–150
–0.5mA
–0.4mA
–100
–0.3mA
–0.2mA
–50
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
0
0
–2
–4
–6
–8
–10
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–0.01
–1
–12
400
IC/IB=10
–30
Collector to emitter voltage VCE (V)
–25˚C
–3
–10
–30
VCE=–10V
350
300
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
–1
–100 –300 –1000
–3
IO — VIN
–10000
16
12
8
–100 –300 –1000
VIN — IO
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Output current IO (µA)
20
–30
–100
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
–10
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
24
Collector output capacitance Cob (pF)
hFE — IC
–100
Forward current transfer ratio hFE
–300
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR612X
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
IB=–1.6mA
–160
–1.4mA
–1.2mA
–120
–1.0mA
–0.8mA
–80
–0.6mA
–0.4mA
–40
–0.2mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
240
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
VCE=–10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
5
Transistors with built-in Resistor
UNR6121/6122/6123/6124/612X/612Y
Cob — VCB
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
VO=–0.2V
Ta=25˚C
–30
Input voltage VIN (V)
Collector output capacitance Cob (pF)
24
–10
–3
–1
–0.3
–0.1
4
–0.03
0
–1
–3
–10
–30
–0.01
–0.1 –0.3
–100
–1
–3
–10
–30
–100
Output current IO (mA)
Collector to base voltage VCB (V)
Characteristics charts of UNR612Y
IC — VCE
VCE(sat) — IC
IB=–1.2mA
–160
–1.0mA
–0.8mA
–120
–0.6mA
–80
–0.4mA
–40
–0.2mA
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
0
–3
Cob — VCB
–30
f=1MHz
IE=0
Ta=25˚C
16
12
8
VO=–0.2V
Ta=25˚C
–10
–3
–1
–0.3
–0.1
4
–0.03
0
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–0.01
–0.1 –0.3
–1
–3
VCE=–10V
–10
–30
Output current IO (mA)
200
160
Ta=75˚C
25˚C
120
–25˚C
80
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
–30
Input voltage VIN (V)
20
–100 –300 –1000
VIN — IO
–100
24
Collector output capacitance Cob (pF)
–10
Collector current IC (mA)
Collector to emitter voltage VCE (V)
240
Forward current transfer ratio hFE
Collector current IC (mA)
–200
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
6
hFE — IC
–100
–240
–100
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and semiconductors described in this material
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2001 MAR