Transistors with built-in Resistor UNR6221/6222/6223/6224 (UN6221/6222/6223/6224) Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 ■ Resistance by Part Number ● ● ● UNR6221 UNR6222 UNR6223 UNR6224 1.0 2.5±0.5 2.5±0.5 +0.1 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ ■ Absolute Maximum Ratings 14.5±0.5 +0.1 0.45–0.05 1 2 3 2.5±0.1 ● (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.65 max. 0.85 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 0.45–0.05 ● 0.8 ■ Features 3.5±0.1 For digital circuits 1 : Emitter 2 : Collector 3 : Base MT-1 Type Pakage (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 500 mA Total power dissipation PT 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Internal Connection C R1 B R2 E Note.) The Part numbers in the Parenthesis show conventional part number. 1 Transistors with built-in Resistor ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ max Unit ICBO VCB = 50V, IE = 0 1 µA ICEO VCE = 50V, IB = 0 1 µA IEBO VEB = 6V, IC = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 Collector to emitter voltage VCEO IC = 2mA, IB = 0 Collector cutoff current Emitter cutoff current Forward current transfer ratio UNR6221 5 UNR6222 2 UNR6223/6224 mA 1 UNR6221 50 V 50 V 40 UNR6222 hFE VCE = 10V, IC = 100mA UNR6223/6224 50 60 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 5mA Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 500Ω Output voltage low level VOL VCC = 5V, VB = 3.5V, RL = 500Ω Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Input resistance 0.25 4.9 V V 0.2 200 UNR6221/6224 V MHz 2.2 UNR6222 R1 (–30%) 4.7 0.8 1.0 1.2 0.17 0.22 0.27 UNR6223 (+30%) 10 Resistance ratio UNR6224 2 UNR6221/6222/6223/6224 R1/R2 kΩ Transistors with built-in Resistor UNR6221/6222/6223/6224 Common characteristics chart PT — Ta Total power dissipation PT (mW) 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UNR6221 IC — VCE VCE(sat) — IC IB=1.0mA Ta=25˚C Collector current IC (mA) 250 0.9mA 0.8mA 200 0.7mA 0.6mA 150 0.5mA 100 0.4mA 0.3mA 50 0.2mA 0.1mA 0 0 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 12 1 Ta=75˚C 200 25˚C 100 –25˚C 3 10 30 100 300 1 1000 3 IO — VIN 10000 16 12 8 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance Cob (pF) 300 0 Cob — VCB 20 VCE=10V 0.01 Collector to emitter voltage VCE (V) 24 hFE — IC 400 Forward current transfer ratio hFE 300 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 4 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 100 VCB (V) 1 0.4 0.03 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 3 Transistors with built-in Resistor UNR6221/6222/6223/6224 Characteristics charts of UNR6222 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 250 IB=1.0mA 0.9mA 200 0.8mA 0.7mA 150 0.6mA 0.5mA 100 0.4mA 0.3mA 50 0.2mA 0.1mA IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 VCE=10V 0.01 0 0 2 4 6 8 10 10 3 30 100 100 –25˚C 50 300 1000 1 3 6 4 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) Output current IO (µA) 8 10 Collector current IC (mA) IO — VIN 10000 f=1MHz IE=0 Ta=25˚C 10 25˚C Collector current IC (mA) Cob — VCB 12 Ta=75˚C 150 0 1 12 Collector to emitter voltage VCE (V) Collector output capacitance Cob (pF) hFE — IC 200 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 300 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 2 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 0.03 1 0.4 100 VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UNR6223 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 200 IB=1.0mA 0.9mA 0.8mA 160 120 0.7mA 0.6mA 0.5mA 80 0.4mA 0.3mA 40 0.2mA 0.1mA IC/IB=10 30 10 3 1 Ta=75˚C 25˚C 0.3 0.1 –25˚C 0.03 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 Ta=75˚C VCE=10V 25˚C 150 100 –25˚C 50 0 0.01 0 4 hFE — IC 200 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 1 3 10 30 100 300 Collector current IC (mA) 1000 1 3 10 30 100 300 Collector current IC (mA) 1000 Transistors with built-in Resistor UNR6221/6222/6223/6224 Cob — VCB IO — VIN 10000 10 8 6 4 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 12 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 2 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 0.03 1 0.4 100 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) VCB (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UNR6224 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) 250 IB=1.0mA 200 0.9mA 0.8mA 150 0.7mA 0.6mA 0.5mA 100 0.4mA 0.3mA 50 0.2mA 0.1mA Collector to emitter saturation voltage VCE(sat) (V) 100 0 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 VCE=10V –25˚C 2 4 6 8 10 12 1 Collector to emitter voltage VCE (V) 3 –25˚C 50 30 100 300 1 1000 3 6 4 30 100 300 1000 VIN — IO 1000 VO=5V Ta=25˚C 3000 300 1000 100 Input voltage VIN (V) 8 10 Collector current IC (mA) IO — VIN Output current IO (µA) 10 10 10000 f=1MHz IE=0 Ta=25˚C 25˚C 100 Collector current IC (mA) Cob — VCB 12 Ta=75˚C 150 0 0.01 0 Collector output capacitance Cob (pF) hFE — IC 200 Forward current transfer ratio hFE 300 300 100 30 10 VO=0.2V Ta=25˚C 30 10 3 1 2 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 100 VCB (V) 1 0.4 0.3 0.6 0.8 1.0 Input voltage VIN 1.2 (V) 1.4 0.1 0.1 0.3 1 3 10 30 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