Transistors with built-in Resistor UNR8231/UNR8231A (UN8231/UN8231A) Silicon NPN epitaxial planer transistor Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 0.7 4.0 0.8 ● 0.65 max. 14.5±0.5 High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and reduction of the number of parts. Available in a type with radial taping. 1.0 1.0 ● 0.2 ■ Features ● (1.45) 0.5 4.5±0.1 0.15 For switching +0.1 0.45–0.05 Parameter Collector to base voltage Symbol UNR8231 Ratings UNR8231 Collector to emitter voltage UNR8231A 1 : Emitter 2 : Collector 3 : Base MT-2 Type Package V 60 20 VCEO V 50 Peak collector current ICP 1.5 A Collector current IC 0.7 A PT* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Total power dissipation Internal Connection * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. ■ Electrical Characteristics Parameter +0.1 Unit 20 VCBO UNR8231A 3 (Ta=25˚C) 2.5±0.1 ■ Absolute Maximum Ratings 2.5±0.5 2 0.45–0.05 2.5±0.5 1 C R1(1kΩ) B R2 (47kΩ) E (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 15V, IE = 0 1 µA Collector cutoff current ICEO VCE = 15V, IB = 0 10 µA IEBO VEB = 14V, IC = 0 0.5 mA Emitter cutoff current Collector to base voltage UNR8231 VCBO IC = 10µA, IE = 0 VCEO IC = 1mA, IB = 0 hFE* VCE = 10V, IC = 150mA Collector to emitter saturation voltage VCE(sat)* IC = 500mA, IB = 5mA Input resistance R1 Collector to emitter voltage UNR8231A UNR8231 UNR8231A Forward current transfer ratio Resistance ratio Transition frequency R1/R2 fT VCB = 10V, IE = –50mA, f = 200MHz 20 V 60 20 V 50 800 2100 0.4 V 0.7 1 1.3 kΩ 0.016 0.021 0.025 200 MHz *Pulse measurement Note.) The Part numbers in the Parenthesis show conventional part number. 1 Transistors with built-in Resistor UNR8231/UNR8231A PT — Ta IC — VCE 1.2 1.0 0.8 0.6 0.4 IB=1.2mA 1.0mA 0.8 0.8mA 0.6mA 0.6 0.4mA 0.4 0.2mA 0.2 0.2 0 0 40 80 120 0 160 2 hFE — IC Collector output capacitance Cob (pF) Forward current transfer ratio hFE 2000 Ta=75˚C 25˚C 1200 –25˚C 800 400 0.3 10 12 1 Collector current IC 3 (A) 10 25 20 15 10 5 0 0.1 0.3 1 3 10 30 IC/IB=100 30 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 30 VCE=10V 0.1 8 Cob — VCB 2400 0 0.01 0.03 6 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 1600 4 Collector to emitter saturation voltage VCE(sat) (V) 1.0 Collector current IC (A) Total power dissipation PT (W) 1.4 100 Ta=25˚C Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 1.2 1.6 100 Collector to base voltage VCB (V) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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