High Speed InGaAs Pin Photodiode 13PD75-TO (GCA) The planar 13PD75-TO series of InGaAs photodiodes is intended for high speed, low noise, and high linearity applications. The diameter of the photosensitive region is sufficiently small to enable very low dark current and low capacitance operation while offering efficient coupling to multi-mode fibers. Devices are hermetically sealed in standard TO-46 headers with either ultra flat or lensed window caps. High reliability is achieved through planar, dielectric-passivated design, and 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ). Chips can also be attached and wire bonded to customer-supplied or other specified packages. Features Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity Device Characteristics: Parameters Test Conditions Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response -5V -5V 1300nm (-3dB) Min - 0.2 0.90 - Typ Max - Units -20 2 0.90 0.95 1.5 Volts nA pF 0.5 - A/W ns GHz Absolute Maximum Ratings Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature 829 Flynn Road, Camarillo, CA 93012 30 Volts 5 mA 5 mA -40oC to + 85oC -40oC to + 85oC 250oC tel(805)445-4500 fax(805)445-4502