BSM 150 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 150 GAL 120 DN2 1200V 210A IC Package Ordering Code HALF BRIDGE GAL 2 C67076-A2013-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values Unit 1200 V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 210 TC = 80 °C 150 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 420 TC = 80 °C 300 Power dissipation per IGBT W Ptot TC = 25 °C 1250 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.1 Diode thermal resistance, chip case RthJCD ≤ 0.25 Diode thermal resistance, chip-case,chopper RTHJCDC ≤ 0.18 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 + 150 °C -40 ... + 125 K/W sec 40 / 125 / 56 Nov-24-1997 BSM 150 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 6 mA 4.5 5.5 6.5 VGE = 15 V, IC = 150 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 150 A, Tj = 125 °C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 2 2.8 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 8 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 400 AC Characteristics Transconductance VCE = 20 V, IC = 150 A Input capacitance 62 nF - 11 - - 1.6 - - 0.6 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Nov-24-1997 BSM 150 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time ns td(on) VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Ω Rise time - 200 400 - 100 200 - 600 800 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Ω Free-Wheel Diode Diode forward voltage V VF IF = 150 A, VGE = 0 V, Tj = 25 °C - 2 2.5 IF = 150 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time µs trr IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs, Tj = 125 °C Reverse recovery charge - 0.4 µC Qrr IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs Tj = 25 °C - 5 - Tj = 125 °C - 18 - 3 Nov-24-1997 BSM 150 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Chopper Diode Chopper diode forward voltage V VFC IFC = 200 A, VGE = 0 V, Tj = 25 °C - 2 2.5 IFC = 200 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time, chopper µs trrC IFC = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/µs, Tj = 125 °C Reverse recovery charge, chopper - 0.5 µC QrrC IFC = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/µs Tj = 25 °C - 12 - Tj = 125 °C - 36 - 4 Nov-24-1997 IGBT-Module IGBT-Modules %60*$/'1%60*$5'1 Gehäusemaße / Schaltbild Package outline / Circuit diagram PIN 6 and 7 GAL type only PIN 4 and 5 GAR type only GAL type GAR type Update of Drawing Sep-21-98