1N6267A Series 1500 Watt Mosorb Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits. http://onsemi.com Cathode Anode Specification Features: • • • • • • • Working Peak Reverse Voltage Range – 5.8 V to 214 V Peak Power – 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 µA Above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1 ns AXIAL LEAD CASE 41A PLASTIC L 1N6 xxxA 1.5KE xxxA YYWW Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are L = Assembly Location 1N6xxxA = JEDEC Device Code 1.5KExxxA = ON Device Code YY = Year WW = Work Week readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any ORDERING INFORMATION MAXIMUM RATINGS Rating Device Symbol Value Unit Peak Power Dissipation (Note 1.) @ TL ≤ 25°C PPK 1500 Watts Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″ Derated above TL = 75°C PD 5.0 Watts 20 mW/°C Thermal Resistance, Junction–to–Lead RJL 20 °C/W Forward Surge Current (Note 2.) @ TA = 25°C IFSM 200 Amps TJ, Tstg – 65 to +175 °C Operating and Storage Temperature Range Package Shipping 1.5KExxxA Axial Lead 500 Units/Box 1.5KExxxARL4 Axial Lead 1500/Tape & Reel 1N6xxxA Axial Lead 500 Units/Box 1N6xxxARL4 Axial Lead 1500/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. *Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 3 1 Publication Order Number: 1N6267A/D 1N6267A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 3.5 V Max., IF (Note 3.) = 100 A) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT VBR IF Parameter VC VBR VRWM Working Peak Reverse Voltage IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF IPP Uni–Directional TVS http://onsemi.com 2 V 1N6267A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A) Breakdown Voltage VRWM (Note 5.) IR @ VRWM (Volts) (µA) Min Nom VC @ IPP (Note 7.) Device JEDEC Device (Note 4.) 1.5KE6.8A 1.5KE7.5A 1.5KE8.2A 1.5KE9.1A 1N6267A 1N6268A 1N6269A 1N6270A 5.8 6.4 7.02 7.78 1000 500 200 50 6.45 7.13 7.79 8.65 6.8 7.5 8.2 9.1 7.14 7.88 8.61 9.55 10 10 10 1 10.5 11.3 12.1 13.4 143 132 124 112 0.057 0.061 0.065 0.068 1.5KE10A 1.5KE11A 1.5KE12A 1.5KE13A 1N6271A 1N6272A 1N6273A 1N6274A 8.55 9.4 10.2 11.1 10 5 5 5 9.5 10.5 11.4 12.4 10 11 12 13 10.5 11.6 12.6 13.7 1 1 1 1 14.5 15.6 16.7 18.2 103 96 90 82 0.073 0.075 0.078 0.081 1.5KE15A 1.5KE16A 1.5KE18A 1.5KE20A 1N6275A 1N6276A 1N6277A 1N6278A 12.8 13.6 15.3 17.1 5 5 5 5 14.3 15.2 17.1 19 15 16 18 20 15.8 16.8 18.9 21 1 1 1 1 21.2 22.5 25.2 27.7 71 67 59.5 54 0.084 0.086 0.088 0.09 1.5KE22A 1.5KE24A 1.5KE27A 1.5KE30A 1N6279A 1N6280A 1N6281A 1N6282A 18.8 20.5 23.1 25.6 5 5 5 5 20.9 22.8 25.7 28.5 22 24 27 30 23.1 25.2 28.4 31.5 1 1 1 1 30.6 33.2 37.5 41.4 49 45 40 36 0.092 0.094 0.096 0.097 1.5KE33A 1.5KE36A 1.5KE39A 1.5KE43A 1N6283A 1N6284A 1N6285A 1N6286A 28.2 30.8 33.3 36.8 5 5 5 5 31.4 34.2 37.1 40.9 33 36 39 43 34.7 37.8 41 45.2 1 1 1 1 45.7 49.9 53.9 59.3 33 30 28 25.3 0.098 0.099 0.1 0.101 1.5KE47A 1.5KE51A 1.5KE56A 1.5KE62A 1N6287A 1N6288A 1N6289 1N6290A 40.2 43.6 47.8 53 5 5 5 5 44.7 48.5 53.2 58.9 47 51 56 62 49.4 53.6 58.8 65.1 1 1 1 1 64.8 70.1 77 85 23.2 21.4 19.5 17.7 0.101 0.102 0.103 0.104 1.5KE68A 1.5KE75A 1.5KE82A 1.5KE91A 1N6291A 1N6292A 1N6293A 1N6294A 58.1 64.1 70.1 77.8 5 5 5 5 64.6 71.3 77.9 86.5 68 75 82 91 71.4 78.8 86.1 95.5 1 1 1 1 92 103 113 125 16.3 14.6 13.3 12 0.104 0.105 0.105 0.106 1.5KE100A 1.5KE110A 1.5KE120A 1.5KE130A 1N6295A 1N6296A 1N6297A 1N6298A 85.5 94 102 111 5 5 5 5 95 105 114 124 100 110 120 130 105 116 126 137 1 1 1 1 137 152 165 179 11 9.9 9.1 8.4 0.106 0.107 0.107 0.107 1.5KE150A 1.5KE160A 1.5KE170A 1.5KE180A 1N6299A 1N6300A 1N6301A 1N6302A 128 136 145 154 5 5 5 5 143 152 162 171 150 160 170 180 158 168 179 189 1 1 1 1 207 219 234 246 7.2 6.8 6.4 6.1 0.108 0.108 0.108 0.108 1.5KE200A 1.5KE220A 1.5KE250A 1N6303A 171 185 214 5 5 5 190 209 237 200 220 250 210 231 263 1 1 1 274 328 344 5.5 4.6 5 0.108 0.109 0.109 VBR @ IT VC IPP VBR Max (mA) (Volts) (A) (%/°C) (Note 6.) (Volts) 3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 4. Indicates JEDEC registered data 5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 6. VBR measured at pulse test current IT at an ambient temperature of 25°C 7. Surge current waveform per Figure 5 and derate per Figures 1 and 2. http://onsemi.com 3 100 PPK , PEAK POWER (kW) NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C 1N6267A Series 100 10 1 0.1µs 1µs 10µs 100µs 1 ms 80 60 40 20 0 10 ms 0 25 50 tP, PULSE WIDTH Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C 10,000 1N6267A/1.5KE6.8A through 1N6303A/1.5KE200A 10,000 MEASURED @ ZERO BIAS MEASURED @ ZERO BIAS 1000 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 1000 MEASURED @ VRWM 100 10 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) 1 10 100 1000 MEASURED @ VRWM 100 10 1 10 VBR, BREAKDOWN VOLTAGE (VOLTS) 100 1000 VBR, BREAKDOWN VOLTAGE (VOLTS) PEAK VALUE - IPP 100 3/8″ 5 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr ≤ 10µs tr 3/8″ IPP, VALUE (%) PD , STEADY STATE POWER DISSIPATION (WATTS) Figure 3. Capacitance versus Breakdown Voltage 4 3 HALF VALUE 50 IPP 2 2 tP 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (°C) 0 200 0 1 2 3 t, TIME (ms) Figure 4. Steady State Power Derating Figure 5. Pulse Waveform http://onsemi.com 4 4 1N6267A Series 1.5KE6.8CA through 1.5KE200CA 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C VBR(NOM)=6.8 to 13V 20V 43V 24V TL=25°C tP=10µs 200 100 50 20 10 5 1000 500 IT , TEST CURRENT (AMPS) IT , TEST CURRENT (AMPS) 1000 500 2 1 VBR(NOM)=6.8 to 13V 20V 24V TL=25°C tP=10µs 200 43V 75V 100 50 20 180V 10 120V 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 ∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 ∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) Figure 6. Dynamic Impedance 1 0.7 0.5 DERATING FACTOR 0.3 0.2 PULSE WIDTH 10 ms 0.1 0.07 0.05 1 ms 0.03 100 µs 0.02 0.01 0.1 10 µs 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 Figure 7. Typical Derating Factor for Duty Cycle APPLICATION NOTES RESPONSE TIME application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 8. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 9. Minimizing this overshoot is very important in the DUTY CYCLE DERATING The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or http://onsemi.com 5 1N6267A Series the 10 µs pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend. ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than TYPICAL PROTECTION CIRCUIT Zin LOAD Vin V V Vin (TRANSIENT) VL OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL VL Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 8. Figure 9. UL RECOGNITION* Conditioning, Temperature test, Dielectric VoltageWithstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #116110. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance *Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA CLIPPER BIDIRECTIONAL DEVICES 1. Clipper-bidirectional devices are available in the 1.5KEXXA series and are designated with a “CA” suffix; for example, 1.5KE18CA. Contact your nearest ON Semiconductor representative. 2. Clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for VF which does not apply). 3. The 1N6267A through 1N6303A series are JEDEC registered devices and the registration does not include a “CA” suffix. To order clipper-bidirectional devices one must add CA to the 1.5KE device title. http://onsemi.com 6 1N6267A Series OUTLINE DIMENSIONS Transient Voltage Suppressors – Axial Leaded 1500 Watt Mosorb MOSORB CASE 41A–02 ISSUE A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD FINISH AND DIAMETER UNCONTROLLED IN DIMENSION P. D K DIM A B D K P P P A K http://onsemi.com 7 INCHES MIN MAX 0.360 0.375 0.190 0.205 0.038 0.042 1.00 ----0.050 MILLIMETERS MIN MAX 9.14 9.52 4.83 5.21 0.97 1.07 25.40 ----1.27 1N6267A Series Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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