Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI450UE-120 (Target specification) 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit Jun 19 ’02 Y.Kobayashi Jun 19 ’02 S.Miyashita REVISIONS T.Miyasaka MT5F12399 1 4 3. Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified ) Collector-Emitter voltage VCES Maximum Ratings 1200 Gate-Emitter voltage VGES +-20 Items Symbols Collector current Conditions Ic Continuous Ic pulse 1ms Tc=25C Units V V 600 Tc=80C 450 Tc=25C 1200 Tc=80C 900 -Ic A 450 -Ic pulse 1ms 900 Collector Power Dissipation Pc 1 device 2080 W Junction temperature Tj 150 C Storage temperature Tstg -40~ +125 C Isolation voltage(*1) Viso 2500 V Mounting(*2) 3.5 Nm Terminals(*2) 4.5 Screw Torque AC : 1min. (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6) / Terminal 3.5~4.5Nm (M6) 4. Electrical characteristics ( at Tj= 25C unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols Characteristics min. typ. Max. Conditions ICES VGE = 0 V, VCE = 1200 V - - 3.0 mA IGES VCE = 0 V, VGE = +-20 V - - 0.6 uA VGE(th) VCE = 20 V, 450 mA TBD 7.0 TBD V V VCE(sat) VGE = (Terminal) Ic = Ic = 15 V Tj = 25 C - 1.95 TBD 450 A Tj = 125 C - 2.2 - VCE(sat) Tj = 25 C - 1.75 - (Chip) Tj = 125 C - 2.0 - Input capacitance Cies VGE = 0V - TBD - Output capacitance Coes VCE = 10 V - TBD - Reverse transfer capacitance Cres f= - TBD - ton Turn-on time tr 1 MHz Vcc = 600 V - TBD 1.2 Ic = 450 A - TBD 0.6 tr(i) VGE = +-15 V - TBD - Turn-off time toff RG = 0.68 Ω - TBD 1.0 Forward on voltage VF tf Reverse recovery time Units - TBD 0.3 Tj = 25 C - 2.0 TBD (Terminal) Tj = 125 C - 2.0 - VF Tj = 25 C - 1.8 - (Chip) Tj = 125 C - 1.8 - - - 0.35 trr IF = IF = 450 A 450 A pF us V us 5. Thermal resistance characteristics Items Thermal resistance Symbols Rth(j-c) Characteristics min. typ. Max. Conditions IGBT - - (1 device) FWD Contact Thermal resistance Rth(c-f) with Thermal Compound (*) 0.0167 * This is the value which is defined mounting on the additional cooling fin with thermal compound. Units 0.060 0.08 C/W Note : This specification is only for technical considerations, and not for contract. This specification is subject to be changed without notices. REVISIONS MT5F12399 2 4 U-series 1200V/450A VCE vs. Ic (Chip) 600 Tj=125℃ 500 Ic [A] 400 300 200 100 0 0 1 2 VCE(sat) [V] 3 4 U-series 1200V/450A VF vs. IF （Chip） 700 Tj=125℃ 600 IF [A] 500 400 300 200 100 0 0 REVISIONS 1 2 VF [V] 3 4 MT5F12399 3 4 U-series 1200V/450A SW-loss vs. Ic 100 90 Condition : Recommended value Vcc=600V,VGE=±15V Rg=0.68Ω, Tj=125℃ SW-loss [mJ] 80 Eoff 70 60 50 Eon 40 30 Err 20 10 0 0 200 400 Ic [A] 600 800 U-series 1200V/450A(M238) Rth(j-c) 1 Rth(j-c) [℃/W] FWD 0.1 IGBT 0.01 0.001 0.001 0.01 0.1 1 Pw [sec.) REVISIONS MT5F12399 4 4