ETC 2N3771/D

ON Semiconductor
2N3771*
2N3772
High Power NPN Silicon Power
Transistors
. . . designed for linear amplifiers, series pass regulators, and
inductive switching applications.
*ON Semiconductor Preferred Device
• Forward Biased Second Breakdown Current Capability
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS
150 WATTS
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IS/b = 3.75 Adc @ VCE = 40 Vdc — 2N3771
= 2.5 Adc @ VCE = 60 Vdc — 2N3772
*MAXIMUM RATINGS
Rating
Symbol
2N3771
2N3772
Unit
Collector–Emitter Voltage
VCEO
40
60
Vdc
Collector–Emitter Voltage
VCEX
50
80
Vdc
Collector–Base Voltage
VCB
50
100
Vdc
Emitter–Base Voltage
VEB
5.0
7.0
Vdc
Collector Current — Continuous
Peak
IC
30
30
20
30
Adc
Base Current — Continuous
Peak
IB
7.5
15
5.0
15
Adc
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
150
0.855
Watts
W/C
TJ, Tstg
–65 to +200
C
Symbol
2N3771, 2N3772
Unit
θJC
1.17
C/W
Operating and Storage Junction
Temperature Range
CASE 1–07
TO–204AA
(TO–3)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
200
PD, POWER DISSIPATION (WATTS)
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N3771/D
2N3771 2N3772
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
*Collector–Emitter Sustaining Voltage (1)
(IC = 0.2 Adc, IB = 0)
2N3771
2N3772
VCEO(sus)
40
60
—
—
Vdc
Collector–Emitter Sustaining Voltage
(IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms)
2N3771
2N3772
VCEX(sus)
50
80
—
—
Vdc
Collector–Emitter Sustaining Voltage
(IC = 0.2 Adc, RBE = 100 Ohms)
2N3771
2N3772
VCER(sus)
45
70
—
—
Vdc
*Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
(VCE = 25 Vdc, IB = 0)
2N3771
2N3772
—
—
10
10
—
—
—
—
—
2.0
5.0
4.0
10
10
—
—
2.0
5.0
—
—
5.0
5.0
2N3771
2N3772
15
15
60
60
2N3771
2N3772
5.0
5.0
—
—
—
—
—
—
2.0
1.4
4.0
4.0
—
—
2.7
2.2
ICEO
*Collector Cutoff Current
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 100 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 45 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
mAdc
ICEV
2N3771
2N3772
2N6257
2N3771
2N3772
mAdc
(VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
*Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
2N3771
2N3772
ICBO
*Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
(VBE = 7.0 Vdc, IC = 0)
2N3771
2N3772
mAdc
IEBO
mAdc
*ON CHARACTERISTICS
DC Current Gain (1)
(IC = 15 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc)
(IC = 20 Adc, VCE = 4.0 Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = 15 Adc, IB = 1.5 Adc)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 30 Adc, IB = 6.0 Adc)
(IC = 20 Adc, IB = 4.0 Adc)
—
VCE(sat)
2N3771
2N3772
2N3771
2N3772
Base–Emitter On Voltage
(IC = 15 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
Vdc
VBE(on)
2N3771
2N3772
Vdc
*DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz)
fT
0.2
—
MHz
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
40
—
—
3.75
2.5
—
—
SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non–repetitive)
(VCE = 40 Vdc)
2N3771
2N3772
(VCE = 60 Vdc)
*Indicates JEDEC Registered Data.
(1) Pulse Test: 300 µs, Rep. Rate 60 cps.
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2
IS/b
Adc
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
2N3771 2N3772
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.02
P(pk)
θJC(t) = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.05
SINGLE PULSE
0.01
0.02
0.05
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
20
50
100
200
500
1000
2000
Figure 2. Thermal Response — 2N3771, 2N3772
40
IC, COLLECTOR CURRENT (AMP)
30
40 µs
2N3771
20
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) < 200C. TJ(pk) may be calculated from the
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, TJ(pk) will be found to be less than TJ(max)
for pulse widths of 1 ms and less. When using ON
Semiconductor transistors, it is permissible to increase the
pulse power limits until limited by T J(max).
2N3772, (dc)
100 µs
dc
200 µs
TC = 25°C
1.0 ms
BONDING WIRE LIMITED
7.0
THERMALLY LIMITED
5.0
(SINGLE PULSE)
100 ms
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
3.0 PULSE CURVES APPLY
500 ms
2N3771
FOR ALL DEVICES
2N3772
2.0
2.0 3.0
5.0 7.0 10
50 70 100
1.0
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
Figure 3. Active–Region Safe Operating Area
— 2N3771, 2N3772
VCC
+30 V
10
5.0
25 µs
RC
SCOPE
RB
0
D1
51
-9.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
VBE(off) = 5.0 V
1.0
t, TIME (s)
µ
+11 V
2.0
VCC = 30
IC/IB = 10
TJ = 25°C
tr
0.5
0.2
0.1
-4 V
td
0.05
RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.02
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
0.01
0.3
Figure 4. Switching Time Test Circuit
3.0
0.5 0.7 1.0
2.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 5. Turn–On Time
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3
20
30
2N3771 2N3772
100
2000
20
t, TIME (s)
µ
10
C, CAPACITANCE (pF)
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
50
5.0
2.0
ts
1.0
0.5
tf
1000
Cib
700
Cob
500
300
0.2
0.1
0.3
TJ = 25°C
0.5
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
20
200
0.1
30
0.5
1.0 2.0
5.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
0.2
Figure 6. Turn–Off Time
hFE , DC CURRENT GAIN
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 150°C
VCE = 4.0 V
25°C
100
70
50
-55°C
30
20
10
7.0
5.0
0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
100
Figure 7. Capacitance
500
300
200
50
20
30
2.0
1.6
TJ = 25°C
IC = 2.0 A
5.0 A
10 A
20 A
1.2
0.8
0.4
0
0.01 0.02
0.5
1.0 2.0
0.05 0.1 0.2
IC, COLLECTOR CURRENT (AMP)
5.0
Figure 9. Collector Saturation Region
Figure 8. DC Current Gain
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4
10
2N3771 2N3772
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
C
–T–
E
D
SEATING
PLANE
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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5
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
2N3771 2N3772
Notes
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6
2N3771 2N3772
Notes
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2N3771 2N3772
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