ETC 2N4410/D

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SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
80
Vdc
Collector – Base Voltage
VCBO
120
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
250
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
—
Vdc
Collector – Emitter Breakdown Voltage
(IC = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms)
V(BR)CEX
120
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
V(BR)CBO
120
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
—
—
0.01
1.0
—
0.1
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
µAdc
µAdc
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
2N4410
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
60
60
—
400
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
VCE(sat)
—
0.2
Vdc
Base – Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
VBE(sat)
—
0.8
Vdc
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
0.8
Vdc
fT
60
300
MHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded)
Ccb
—
12
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded)
Ceb
—
50
pF
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
2. fT = |hfe| • ftest.
500
300
h FE, DC CURRENT GAIN
200
VCE = 1.0 V
VCE = 5.0 V
TJ = 125°C
25°C
100
– 55°C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
100 mA
30 mA
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
10
20
50
Figure 2. Collector Saturation Region
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N4410
101
IC, COLLECTOR CURRENT ( µA)
VCE = 30 V
100
TJ = 125°C
10–1
10–2
75°C
10–3
REVERSE
FORWARD
25°C
10–4
10–5
0.4
IC = ICES
0.3
0.1
0.2
0
0.1
0.2
0.3
0.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
0.5
0.6
Figure 3. Collector Cut–Off Region
1.0
2.5
θV, TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1
1.0 2.0 3.0 5.0 10 20 30
0.2 0.3 0.5
IC, COLLECTOR CURRENT (mA)
50
2.0
1.0
qVC for VCE(sat)
0.5
0
– 0.5
– 1.0
qVB for VBE(sat)
– 1.5
– 2.0
– 2.5
0.1
100
TJ = – 55°C to +135°C
1.5
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
100
10 µs
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 µF
3.0 k
RC
RB
Vout
5.1 k
Vin
100
1N914
Values Shown are for IC @ 10 mA
Figure 6. Switching Time Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TJ = 25°C
30
C, CAPACITANCE (pF)
VCC
30 V
VBB
– 8.8 V
Vin
100
Figure 5. Temperature Coefficients
100
70
50
10.2 V
50
20
10
Cibo
7.0
5.0
Cobo
3.0
2.0
1.0
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
3
2N4410
5000
1000
IC/IB = 10
TJ = 25°C
500
1000
tr @ VCC = 30 V
100
50
td @ VEB(off) = 1.0 V
30
VCC = 120 V
300
ts @ VCC = 120 V
100
1.0
20 30 50
2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn–On Time
4
500
200
20
10
0.2 0.3 0.5
IC/IB = 10
TJ = 25°C
tf @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
200
2000
tr @ VCC = 120 V
300
tf @ VCC = 120 V
3000
100
200
50
0.2 0.3 0.5
20 30 50
1.0 2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (mA)
100
200
Figure 9. Turn–Off Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N4410
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
2N4410
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N4410/D