ETC 2N4921/D

ON Semiconductor
2N4921
thru
2N4923 *
Medium-Power Plastic NPN
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
*ON Semiconductor Preferred Device
• Low Saturation Voltage —
•
•
•
•
1 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
30 WATTS
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to PNP 2N4918, 2N4919, 2N4920
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*MAXIMUM RATINGS
Rating
Symbol
2N4921
2N4922
2N4923
Unit
VCEO
40
60
80
Vdc
Collector–Base Voltage
VCB
40
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous (1)
IC
1.0
3.0
Adc
Base Current — Continuous
IB
1.0
Adc
Total Power Dissipation @ TC = 25C
Derate above 25C
PD
30
0.24
Watts
W/C
TJ, Tstg
–65 to +150
C
Collector–Emitter Voltage
Operating & Storage Junction
Temperature Range
CASE 77–09
TO–225AA TYPE
THERMAL CHARACTERISTICS (2)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
θJC
4.16
C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6)
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N4921/D
2N4921 thru 2N4923
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
25
50
75
100
TC, CASE TEMPERATURE (°C)
125
150
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
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2
2N4921 thru 2N4923
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
60
80
—
—
—
—
—
—
0.5
0.5
0.5
—
—
0.1
0.5
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (3)
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
2N4921
2N4922
2N4923
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
Vdc
ICEO
mAdc
2N4921
2N4922
2N4923
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125C)
ICEX
mAdc
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
—
0.1
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
40
30
10
—
150
—
ON CHARACTERISTICS
DC Current Gain (3)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage (3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
—
0.6
Vdc
Base–Emitter Saturation Voltage (3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
—
1.3
Vdc
Base–Emitter On Voltage (3)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
—
1.3
Vdc
fT
3.0
—
MHz
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
—
100
pF
Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
—
—
(3) Pulse Test: PW ≈ 300 µs, Duty Cycle ≈ 2.0%.
*Indicates JEDEC Registered Data.
Vin
TURN-ON PULSE
5.0
t1
VCC
Vin
VBE(off)
2.0
RB
Cjd<<Ceb
APPROX
+11 V
t3
SCOPE
Vin
APPROX 9.0 V
t2
TURN-OFF PULSE
VCC = 30 V
IC/IB = 20
3.0
RC
-4.0 V
t1 ≤ 15 ns
100 < t2 ≤ 500 µs
t3 ≤ 15 ns
t, TIME (s)
µ
APPROX
+11 V
1.0
0.7
0.5
0.3
0.2
0.1
DUTY CYCLE ≈ 2.0% 0.07
RB and RC varied to 0.05
obtain desired
current levels
IC/IB = 10, UNLESS NOTED
TJ = 25°C
TJ = 150°C
VCC = 60 V
td
VCC = 30 V
tr
VCC = 60 V
VBE(off) = 2.0 V
VCC = 30 V
VBE(off) = 0
10
Figure 2. Switching Time Equivalent Circuit
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn–On Time
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3
500 700 1000
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
2N4921 thru 2N4923
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.03
P(pk)
θJC(t) = r(t) θJC
θJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.05
0.01
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
10
7.0
5.0
5.0 ms
3.0
2.0
TJ = 150°C
1.0
0.7
0.5
0.3
0.2
0.1
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
100 µs
1.0 ms
dc
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
PULSE CURVES APPLY BELOW
RATED VCEO
2.0 3.0
5.0 7.0 10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70
100
Figure 5. Active–Region Safe Operating Area
5.0
5.0
3.0
1.0
0.7
0.5
IC/IB = 10
0.3
0.2
0.1
0.07
0.05
IC/IB = 20
TJ = 25°C
TJ = 150°C
IB1 = IB2
ts′ = ts - 1/8 tf
10
20
30
200 300
50 70 100
IC, COLLECTOR CURRENT (mA)
IC/IB = 20
2.0
t f , FALL TIME (s)
µ
t s′, STORAGE TIME (s)
µ
3.0
IC/IB = 20
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
500 700 1000
IC/IB = 10
TJ = 25°C
TJ = 150°C
VCC = 30 V
IB1 = IB2
10
Figure 6. Storage Time
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
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4
500 700 1000
hFE, DC CURRENT GAIN
1000
700
500
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2N4921 thru 2N4923
VCE = 1.0 V
300
200
TJ = 150°C
100
70
50
25°C
-55°C
30
20
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA)
1000 2000
1.0
0.8
108
1.0 A
TJ = 25°C
0.4
0.2
0
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10 20 30
IB, BASE CURRENT (mA)
50
100
200
1.5
IC = 10 x ICES
VCE = 30 V
TJ = 25°C
107
1.2
IC = 2 x ICES
VOLTAGE (VOLTS)
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
0.5 A
Figure 9. Collector Saturation Region
106
IC ≈ ICES
105
ICES VALUES
OBTAINED FROM
FIGURE 12
104
0
30
0.9
0.6
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.3
60
90
120
VCE(sat) @ IC/IB = 10
0
2.0 3.0 5.0
10
20 30 50
150
100 200 300 500
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base–Emitter Resistance
Figure 11. “On” Voltage
104
TJ = 150°C
103
100°C
102
25°C
101
IC = ICES
100
VCE = 30 V
10-1
10-2
-0.2
1000 2000
+2.5
REVERSE
-0.1
FORWARD
0
+0.1
+0.2
+0.3
+0.4
TEMPERATURE COEFFICIENTS (mV/ °C)
IC, COLLECTOR CURRENT (A)
µ
0.25 A
0.6
Figure 8. Current Gain
103
IC = 0.1 A
+2.0
*APPLIES FOR IC/IB ≤
+1.5
+1.0
TJ = 100°C to 150°C
+0.5
*θVC FOR VCE(sat)
0
-55°C to +100°C
-0.5
-1.0
-1.5
θVB FOR VBE
-2.0
-2.5
2.0 3.0 5.0
+0.5
[email protected] 1.0V
2
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10
20 30
50
100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut–Off Region
Figure 13. Temperature Coefficients
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5
1000 2000
2N4921 thru 2N4923
PACKAGE DIMENSIONS
TO–225AA
CASE 77–09
ISSUE W
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
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6
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
2N4921 thru 2N4923
Notes
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7
2N4921 thru 2N4923
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