ETC 2N5401/D

ON Semiconductor
2N5401*
Amplifier Transistors
PNP Silicon
*ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating
Symbol
2N5400
2N5401
Unit
Collector–Emitter Voltage
VCEO
120
150
Vdc
Collector–Base Voltage
VCBO
130
160
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
–55 to +150
°C
Operating and Storage Junction
Temperature Range
1
2
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
COLLECTOR
3
THERMAL CHARACTERISTICS
Characteristic
3
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
2
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
150
—
160
—
5.0
—
—
—
50
50
—
50
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CEO
2N5400
2N5401
V(BR)CBO
2N5400
2N5401
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Vdc
V(BR)EBO
Vdc
Vdc
ICBO
2N5401
2N5401
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
nAdc
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
Publication Order Number:
2N5401/D
2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
50
60
50
—
240
—
—
—
0.2
0.5
—
—
1.0
1.0
100
300
—
6.0
40
200
—
8.0
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Noise Figure
(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
NF
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
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2
MHz
pF
—
dB
2N5401
200
h FE, CURRENT GAIN
150
TJ = 125°C
100
25°C
70
50
-55°C
VCE = -1.0 V
VCE = -5.0 V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
100
10
20
50
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
Figure 2. Collector Saturation Region
103
IC, COLLECTOR CURRENT (A)
µ
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
102
VCE = 30 V
IC = ICES
101
100
TJ = 125°C
75°C
10-1
10-2
REVERSE
25°C
10-3
0.3
0.2
FORWARD
0.1
0
0.1
0.2 0.3 0.4
0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut–Off Region
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3
0.6
0.7
2N5401
1.0
0.9
θV, TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
0.7
VBE(sat) @ IC/IB = 10
0.6
0.5
0.4
0.3
0.2
VCE(sat) @ IC/IB = 10
0.1
0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
50
100
2.5
TJ = -55°C to 135°C
2.0
1.5
1.0
0.5
θVC for VCE(sat)
0
-0.5
-1.0
-1.5
θVB for VBE(sat)
-2.0
-2.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 µF
3.0 k
C, CAPACITANCE (pF)
10 µs
INPUT PULSE
100
70
50
VCC
-30 V
100
Vin
RC
Vout
RB
5.1 k
Vin
100
TJ = 25°C
30
Cibo
20
10
7.0
5.0
Cobo
3.0
1N914
2.0
1.0
0.2
Values Shown are for IC @ 10 mA
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Switching Time Test Circuit
1000
700
500
20
Figure 7. Capacitances
tr @ VCC = 120 V
300
1000
700
500
tr @ VCC = 30 V
200
t, TIME (ns)
t, TIME (ns)
10
2000
IC/IB = 10
TJ = 25°C
100
70
50
td @ VBE(off) = 1.0 V
VCC = 120 V
20
1.0
2.0 3.0 5.0
10
20 30
50
300
IC/IB = 10
TJ = 25°C
tf @ VCC = 120 V
tf @ VCC = 30 V
200
ts @ VCC = 120 V
100
70
50
30
10
0.2 0.3 0.5
100
Figure 5. Temperature Coefficients
VBB
+8.8 V
10.2 V
50
30
100
20
0.2 0.3 0.5
200
1.0
2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn–On Time
Figure 9. Turn–Off Time
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4
50
100
200
2N5401
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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5
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
2N5401
Notes
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6
2N5401
Notes
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7
2N5401
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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2N5401/D