ETC 2N6040/D

ON Semiconductor
PNP
Plastic Medium-Power
Complementary Silicon
Transistors
2N6040
thru
2N6042 *
NPN
2N6043
thru
2N6045*
. . . designed for general–purpose amplifier and low–speed
switching applications.
• High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mAdc —
•
•
VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043
= 80 Vdc (Min) — 2N6041, 2N6044
= 100 Vdc (Min) — 2N6042, 2N6045
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
*ON Semiconductor Preferred Device
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MAXIMUM RATINGS (1)
Rating
Symbol
2N6040
2N6043
2N6041
2N6044
2N6042
2N6045
Unit
Collector–Emitter Voltage
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
IC
8.0
16
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25C
Derate above 25C
PD
75
0.60
Watts
W/C
TJ, Tstg
–65 to +150
C
Collector Current — Continuous
Peak
Operating and Storage Junction,
Temperature Range
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60–80–100 VOLTS
75 WATTS
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
θJC
1.67
C/W
Thermal Resistance, Junction to Ambient
θJA
57
C/W
CASE 221A–09
TO–220AB
(1) Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 3
1
Publication Order Number:
2N6040/D
2N6040 thru 2N6042 2N6043 thru 2N6045
PD, POWER DISSIPATION (WATTS)
TA TC
4.0 80
3.0 60
TC
2.0 40
TA
1.0 20
0
0
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
Figure 1. Power Derating
http://onsemi.com
2
140
160
2N6040 thru 2N6042 2N6043 thru 2N6045
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*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
100
—
—
—
—
—
20
20
20
—
—
—
—
—
—
20
20
20
200
200
200
—
—
—
20
20
20
—
2.0
1000
1000
100
20.000
20,000
—
—
—
—
2.0
2.0
4.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
Vdc
—
µA
ICEO
µA
ICEX
µA
ICBO
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
44
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
hFE
2N6040, 41, 2N6043,
2N6042, 2N6045
All Types
Collector–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 16 mAdc)
44
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 8.0 Adc, IB = 80 Adc)
—
VCE(sat)
2N6040, 41, 2N6043,
2N6042, 2N6045
All Types
Vdc
Base–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)
VBE(sat)
—
4.5
Vdc
Base–Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
2.8
Vdc
Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
|hfe|
4.0
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
—
—
300
200
pF
hfe
300
—
—
DYNAMIC CHARACTERISTICS
2N6040/2N6042
2N6043/2N6045
Small–Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
*Indicates JEDEC Registered Data.
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3
2N6040 thru 2N6042 2N6043 thru 2N6045
5.0
RC
SCOPE
TUT
V2
approx
+8.0 V
RB
51
0
V1
approx
-12 V
D1
≈ 8.0 k ≈120
+4.0 V
25 µs
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities and D1.
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
ts
2.0
t, TIME (s)
µ
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
3.0
VCC
-30 V
0.7
0.5
0.3
0.2 VCC = 30 V
IC/IB = 250
IB1 = IB2
0.1 TJ = 25°C
PNP
td @ VBE(off) = 0 V
0.07
NPN
0.05
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 2. Switching Times Equivalent Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.03
0.02
0.02
0.01
0.01
0.02 0.03
0.01
0.05
5.0 7.0
10
P(pk)
θJC(t) = r(t) θJC
θJC = 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.05
SINGLE PULSE
tr
Figure 3. Switching Times
0.1
0.1
0.07
0.05
tf
1.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
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4
20
30
50
100
200 300
500
1000
2N6040 thru 2N6042 2N6043 thru 2N6045
20
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 µs
IC, COLLECTOR CURRENT (AMP)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
1.0
500 µs
1.0ms
dc
5.0ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
2N6040, 2N6043
2N6041, 2N6044
2N6045
5.0 7.0 10
20 30
2.0 3.0
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active–Region Safe Operating Area
300
5000
3000
2000
200
TJ = 25°C
C, CAPACITANCE (pF)
hfe, SMALL-SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
100
50
30
20
10
1.0
5.0
Cib
70
50
PNP
NPN
2.0
Cob
100
10
20
50 100
f, FREQUENCY (kHz)
30
0.1
500 1000
200
PNP
NPN
0.2
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 6. Small–Signal Current Gain
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5
50
100
2N6040 thru 2N6042 2N6043 thru 2N6045
PNP
2N6040, 2N6041, 2N6042
NPN
2N6043, 2N6044, 2N6045
20,000
20,000
VCE = 4.0 V
7000
5000
TJ = 150°C
3000
2000
25°C
1000
700
500
-55°C
300
200
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
VCE = 4.0 V
10,000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10,000
7000
5000
TJ = 150°C
3000
2000
25°C
1000
700
500
-55°C
300
200
0.1
10
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
3.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
TJ = 25°C
2.6
IC = 2.0 A
6.0 A
4.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
20
5.0 7.0 10
2.0 3.0
IB, BASE CURRENT (mA)
30
3.0
TJ = 25°C
2.6
IC = 2.0 A
6.0 A
4.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
7.0
10
Figure 9. Collector Saturation Region
3.0
3.0
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2.0
1.5
VBE @ VCE = 4.0 V
VBE(sat) @ IC/IB = 250
1.0
0.5
0.2 0.3
0.5 0.7
VBE(sat) @ IC/IB = 250
1.5
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
0.1
2.0
1.0
2.0 3.0
5.0
0.5
7.010
VCE(sat) @ IC/IB = 250
0.1
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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6
5.0
2N6040 thru 2N6042 2N6043 thru 2N6045
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
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7
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
2N6040 thru 2N6042 2N6043 thru 2N6045
ON Semiconductor and
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