ETC 2SB955(K)

2SB955(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1126(K)
Outline
TO-220AB
2
1
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
ID
1.0 kΩ
(Typ)
200 Ω
(Typ)
3
2SB955(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
–120
V
Collector to emitter voltage
VCEO
–120
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–10
A
Collector peak current
IC(peak)
–15
A
10
A
50
W
C to E diode forward current
ID *
1
2
Collector power dissipation
PC*
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Value at TC = 25°C
2. PW ≤ 1 ms 1 shot
Electrical Characteristics (Ta = 25°C)
Item
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
Symbol
–120
—
—
V
IC = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–7
—
—
V
IE = –200 mA, IC = 0
Collector cutoff current
ICBO
—
—
–100
µA
VCB = –120 V, IE = 0
ICEO
—
—
–10
µA
VCE = –100 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
Collector to emitter saturation
voltage
VCE(sat)1
—
—
–1.5
V
IC = –5 A, IB = –10 mA*
VCE(sat)2
—
—
–3.0
V
IC = –10 A, IB = –0.1 A*
VBE(sat)1
—
—
–2.0
V
IC = –5 A, IB = –10 mA*
VBE(sat)2
—
—
–3.5
V
IC = –10 A, IB = –0.1 A*
C to E diode forward voltage
VD
—
—
3.0
V
ID = 10 A*
Turn on time
ton
—
0.8
—
µs
VCC = –30 V
IC = –5 A, IB1 = –IB2 = –10 mA
Turn off time
toff
—
4.0
—
µs
Base to emitter saturation
voltage
Note:
2
1. Pulse test
VCE = –3 V, IC = –5 A*
1
1
1
1
1
1
2SB955(K)
Maximum Collector Dissipation
Curve
Area of Safe Operation
–30
Collector current IC (A)
DC current transfer ratio hFE
Collector current IC (A)
2.0
)
°C
–6
–8
–10
–2
–4
Collector to emitter voltage VCE (V)
25
IB = 0
=
–2
t
(T C
0.4 mA
o
sh
0.5
–4
0
ion
–6
ot
sh
DC Current Transfer Ratio vs.
Collector Current
30000
1.0
0.9
P
C =
0.8
50
.7
W
0
0.6
s1
m
–8
–10
–30
–100
–300
Collector to emitter voltage VCE (V)
VCE = –3 V
Pulse
5
1.
1
at
er
TC = 25°C
=
Ta = 25°C
Typical Output Characteristics
–10
Op
–0.3
–0.03
–3
150
s1
m
–1.0
–0.1
50
100
Case temperature TC (°C)
10
10
DC
20
IC(max)
–3
=
30
PW
–10
40
0
iC(peak)
PW
Collector power dissipation PC (W)
50
10000
3000
5°C
=7 5
2
Ta
5
–2
1000
300
100
30
–0.3
–1.0
–3
–10
Collector current IC (A)
–30
3
Saturation Voltage vs. Collector Current
Switching Time vs. Collector Current
–10
–3
10
3
VBE(sat)
–1.0
500
VCE(sat)
–0.3
Switching time t (µs)
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
2SB955(K)
200
IC/IB = 100
–0.1
Ta = 25°C
Pulse
–0.03
–0.01
–0.3
–1.0
–3
–10
Collector current IC (A)
tstg
ton
1.0
tf
0.3
0.1
VCC = –30 V
IC = 500 IB1 = –500 IB2
Ta = 25°C
0.03
0.01
–0.3
–30
–1.0
–3
–10
Collector current IC (A)
Diode Current vs. Forward Voltage
10
Diode current ID (A)
8
6
4
2
0
4
TC = 25°C
1
2
3
4
Diode forward voltage VF (V)
5
–30
2SB955(K)
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
5
2SB955(K)
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Tel: Tokyo (03) 3270-2111
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USA
Tel: 415-589-8300
Fax: 415-583-4207
6
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