2SC4938 Transistors High-voltage Switching Transistor (400V, 5A) 2SC4938 !External dimensions (Units : mm) !Features 1) Low VCE(sat). (Typ. 0.6V at IC / IB=5/1A) 2) Fast switching. (tf :Max.1µs at IC=4A) 3) Wide SOA. (safe operating area) 13.1 0.5Min. 1.3 0to0.3 ROHM : PSD3 EIAJ : SC-83A !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol Limits Unit VCBO VCEO 400 400 V V VEBO IC 7 5 7 V A A 1.5 35 W W(Tc=25˚C) 150 -55~+150 ˚C ˚C ICP PC Collector power dissipation Junction temperature Storage temperature Tj Tstg ∗ Single pulse, Pw=100ms. ∗ !Packaging specifications and hFE Type 2SC4938 Package hFE PSD3 B Code Basic ordering unit (pieces) TL 1000 !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCBO BVCEO 400 400 7 - - 10 10 V V V µA µA Collector-emitter saturation voltage VCE(sat) VBE(sat) - 1 1.5 50 V V - BVEBO ICBO IEBO DC current transfer ratio Transition frequency hFE 25 fT - 15 - MHz Output capacitance Cob ton tstg - 80 - pF - - 1 µs - - 2.5 µs tf - - 1 µs Base-emitter saturation voltage Turn-on time Storage time Fall time ∗ Measured using pulse current. Conditions IC=50µA IC=1mA IE=50µA VCB=400V VEB=5V IC/IB=5A/1A IC/IB=5A/1A VCE/IC=5V/2A VCB=10V, IE=-0.5A, f=5MHz VCB=10V, IE=0A, f=1MHz IC=4A , RL=50Ω IB1=-IB2=0.4A VCC 200V ∗ ∗ ∗ 4.5 8.8 0.4 1.3 1.24 0.78 10.1 2.54 (3) (2) (1) 5.08 3.2 (1) Base (2) Collector (3) Emitter