Transistor 2SD0637 (2SD637) Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9±0.1 ■ Absolute Maximum Ratings Parameter Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1.0 4.5±0.1 4.1±0.2 7 0.45±0.05 3 2 2.5 1:Base 2:Collector 3:Emitter 1 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Conditions ICBO Collector cutoff current 0. 0.55±0.1 (Ta=25˚C) Symbol ■ Electrical Characteristics 0.85 1.25±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 min typ VCB = 20V, IE = 0 max Unit 1 µA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V Forward current transfer ratio hFE* VCE = 10V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.3 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF *h FE 160 460 0.5 V Rank classification Rank Q R S hFE 160 ~ 260 210 ~ 340 290 ~ 460 Note.) The Part number in the Parenthesis shows conventional part number. 1 2SD0637 Transistor PC — Ta IC — VCE 1200 Ta=25˚C 300 200 100 1000 140µA 40 120µA 100µA 30 80µA 60µA 20 800 600 400 40µA 10 200 20µA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 200 Collector current IC (mA) 160 120 25˚C –25˚C 80 40 160 120 80 40 0 0 0.4 0.8 1.2 1.6 2.0 0 Base to emitter voltage VBE (V) 200 400 hFE — IC 600 1000 25˚C 300 –25˚C 200 100 0.3 1 3 10 IC/IB=10 10 3 1 0.3 25˚C 0.1 30 Collector current IC (mA) 100 –25˚C 0.01 0.1 0.3 1 3 10 30 100 Cob — VCB 240 180 120 60 0 – 0.1 – 0.3 Ta=75˚C 0.03 12 Collector output capacitance Cob (pF) Ta=75˚C 1.0 Collector current IC (mA) VCB=10V Ta=25˚C Transition frequency fT (MHz) 400 0.8 30 fT — IE VCE=10V 0 0.1 800 300 500 0.6 100 Base current IB (µA) 600 0.4 VCE(sat) — IC 240 VCE=10V 0 0.2 Base to emitter voltage VBE (V) IC — IB 200 Ta=75˚C 0 Collector to emitter voltage VCE (V) IC — VBE Collector current IC (mA) Base current IB (µA) 50 400 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C IB=160µA 0 2 IB — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 500 IE=0 f=1MHz Ta=25˚C 10 8 6 4 2 0 –1 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V) 2SD0637 Transistor NV — IC 240 VCE=10V Ta=25˚C Function=FLAT 200 VCE=5V f=270Hz 30 160 h Parameter Noise voltage NV (mV) h Parameter — IC 100 Rg=100kΩ 120 80 10 1 22kΩ 4.7kΩ 40 hfe (✕100) 3 hoe (10–1µS) hre (✕10–4) 0.3 hie (✕10kΩ) 0 10 30 100 300 Collector current IC (µA) 1000 0.1 0.1 0.3 1 3 10 Collector current IC (mA) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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