2SJ296 L , 2SJ296 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 Features 1 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 2 4 3 1 2, 4 2 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –15 A ——————————————————————————————————————————— Avalanche current IAP*** –15 A ——————————————————————————————————————————— Avalanche energy EAR*** 19 mJ ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 2SJ296 L , 2SJ296 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 ———————————————————————————————————————————– Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state resistance RDS(on) — 0.075 0.095 Ω ID = –8 A VGS = –10 V * ————————————————————————– — 0.09 0.15 Ω ID = –8 A VGS = –4 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 8 12 — S ID = –8 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 1450 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 670 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 240 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 20 — ns ID = –8 A ———————————————————————————————— Rise time tr — 95 — ns ———————————————————————————————— Turn–off delay time td(off) — 230 — ns VGS = –10 V RL = 3.75 Ω ———————————————————————————————— Fall time tf — 160 — ns ———————————————————————————————————————————– Body–drain diode forward voltage VDF — –1.5 — V IF = –15 A, VGS = 0 ———————————————————————————————————————————– Body–drain diode reverse recovery time trr — 160 — ns IF = –15 A, VGS = 0, diF / dt = 50 A / µs ———————————————————————————————————————————– * Pulse Test See characteristic curves of 2SJ290