2SJ388 L , 2SJ388 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 Features 4 12 • • • • Low on–resistance High speed switching Low drive current 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC – DC converter 2, 4 12 3 3 1. Gate 2. Drain 3. Source 4. Drain 1 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 2SJ388 L , 2SJ388 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.06 0.08 Ω ID = –5 A VGS = –10 V * ———————————————————————— — 0.12 0.2 Ω ID = –5 A VGS = –2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.5 8 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 970 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 620 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 250 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = –5 A ———————————————————————————————— Rise time tr — 65 — ns ———————————————————————————————— Turn–off delay time td(off) — 250 — ns VGS = –10 V RL = 6 Ω ———————————————————————————————— Fall time tf — 240 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — –1.0 — V IF = –10 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 85 — µs IF = –10 A, VGS = 0, diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2SJ388 L , 2SJ388 S Power vs. Temperature Derating Channel Dissipation Pch (W) 30 20 10 0 50 100 Case Temperature Tc (°C) 150