Power F-MOS FETs 2SK2923 Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 15.0±0.3 +0.5 13.7–0.2 ■ Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Unit Drain to Source breakdown voltage VDSS 150 V Gate to Source voltage VGSS ±20 V DC ID ±20 A Pulse IDP ±40 A EAS* 200 mJ 4.1±0.2 8.0±0.2 Solder Dip ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply Avalanche energy capacity * Allowable power TC = 25°C dissipation Ta = 25°C 50 PD 2.6±0.1 1.2±0.15 1.45±0.15 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7 Drain current 3.0±0.2 ■ Applications 1 2 3 1: Gate 2: Drain 3: Source TO-220E Package W 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C L = 1 mH, IL = 20A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 120V, VGS = 0 10 µA Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 ±1 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 10V, ID = 1mA RDS(on)1 VGS = 10V, ID = 10A RDS(on)2 VGS = 4V, ID = 10A Drain to Source ON-resistance Forward transfer admittance | Yfs | VDS = 10V, ID = 10A Diode forward voltage VDSF IDR = 20A, VGS = 0 Input capacitance (Common Source) Ciss 150 V 2.5 V 60 80 mΩ 70 100 mΩ −1.6 V 1 10 S 17 2000 pF 510 pF Reverse transfer capacitance (Common Source) Crss 190 pF Turn-on time (delay time) td(on) 15 ns Rise time tr VDD = 100V, ID = 10A 40 ns Fall time tf VGS = 10V, RL = 10Ω 160 ns Turn-off time (delay time) td(off) Thermal resistance between channel and case Rth(ch-c) 2.5 °C/W Thermal resistance between channel and atmosphere Rth(ch-a) 62.5 °C/W Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz 660 ns 1