APT4F120K 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO-220 D APT4F120K Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current @ TC = 25°C 4 Continuous Drain Current @ TC = 100°C 3 IDM Pulsed Drain Current 15 VGS Gate - Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 310 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 2 A ID 1 A Thermal and Mechanical Characteristics Characteristic Min Typ Max Unit W PD Total Power Dissipation @ TC = 25°C - - 225 RθJC Junction to Case Thermal Resistance - - .56 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface - .11 - -55 - 150 - - 300 - 0.07 - oz - 1.22 - g - - 10 in·lbf - - 1.1 N·m TJ, TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque (TO-220 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com °C/W °C 050-8163 Rev D 3-2010 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ Min VGS = 0V, ID = 250μA 1200 Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics 4.2 Ω 4 5 V VGS = VDS, ID = 0.5mA VGS = 0V TJ = 125°C 1000 VGS = ±30V Crss Reverse Transfer Capacitance Coss Output Capacitance Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Fall Time nA Typ Max Unit S 4.5 17 100 pF 40 VGS = 0V, VDS = 0V to 800V 20 43 VGS = 0 to 10V, ID = 2A, VDS = 600V 7 nC 20 7.4 Resistive Switching Current Rise Time Turn-Off Delay Time ±100 1385 Effective Output Capacitance, Energy Related Qgd Min VGS = 0V, VDS = 25V f = 1MHz Effective Output Capacitance, Charge Related Gate-Source Charge μA TJ = 25°C unless otherwise specified Input Capacitance Qgs mV/°C 250 Ciss Total Gate Charge -10 TJ = 25°C gfs Qg 2.5 V/°C VDS = 1200V Test Conditions 5 V 3.42 VDS = 50V, ID = 2A Co(er) Unit VGS = 10V, ID = 2A Parameter 4 Max 1.41 Forward Transconductance Co(cr) Typ Reference to 25°C, ID = 250μA 3 IDSS Symbol Test Conditions APT4F120K 4.4 VDD = 800V, ID = 2A RG = 10Ω 6 ns 24 , VGG = 15V 6.9 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Continuous Source Current MOSFET symbol (Body Diode) showing the integral reverse p-n junction ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage trr Reverse Recovery Time IS Reverse Recovery Charge diSD/dt = 100A/μs, 050-8163 Rev D 3-2010 dv/dt Reverse Recovery Current Peak Recovery dv/dt Max Unit 4 A 15 S ISD = 2A, TJ = 25°C, VGS = 0V VDD = 100V Irrm Typ G diode (body diode) ISD = 2A 3 , Qrr Min D 0.8 1.3 TJ = 25°C 170 195 TJ = 125°C 330 400 TJ = 25°C .370 TJ = 125°C .820 TJ = 25°C 4.90 TJ = 125°C 5.40 ISD ≤ 2A, di/dt≤1000Aμs, VDD = 800V, TJ = 125°C 1 2 3 4 5 nS μC A 20 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25°C, L = 155.0mH, RG = 25Ω, IAS = 2A. Pulse test: Pulse Width < 380μs, duty cycle < 2%. Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. V V/ns APT4F120K 10 4.0 V GS T = 125°C = 10V J 3.5 ID, DRIAN CURRENT (A) TJ = -55°C 6 4 TJ = 25°C 2 0 TJ = 125°C 3.0 GS 2.0 5V 1.5 1.0 4.5V 0.5 TJ = 150°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 16 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. VGS = 10V @ 2A 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 14 2.5 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 = 6, 7, 8 & 9V V 2.5 2.0 1.5 1.0 0.5 12 10 TJ = -55°C 8 TJ = 25°C 6 TJ = 125°C 4 2 0 0-55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 2,000 5 4 TJ = -55°C C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE 1,000 TJ = 25°C 3 TJ = 125°C 2 100 Coss 10 Crss 1 00 0.5 1.0 1.5 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 1 2.0 200 400 600 800 1000 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 16 VDS = 240V 10 VDS = 600V 8 6 VDS = 960V 4 2 0 0 10 20 30 40 50 60 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) 14 12 0 16 ID = 2A VGS, GATE-TO-SOURCE VOLTAGE (V) Ciss 14 12 10 8 TJ = 25°C 6 TJ = 150°C 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 050-8163 Rev D 3-2010 ID, DRAIN CURRENT (A) 8 APT4F120K 20 20 10 10 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 13µs 100µs 1 Rds(on) 1ms 10ms 0.1 TJ = 125°C TC = 75°C 1 13µs Rds(on) 100µs 1ms 1 10ms TJ = 150°C TC = 25°C 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 100ms DC line 0.1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.50 0.7 0.40 0.5 0.30 Note: 0.20 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.60 0.3 t1 t2 0.10 t1 = Pulse Duration t 0.1 0.05 0 10 -5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10 10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration -4 1.0 TO-220 (K) Package Outline e3 100% Sn Plated 1.39 (.055) 0.51 (.020) Drain 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230) 16.25 (.639) 14.23 (.560) 4.08 (.161) Dia. 3.54 (.139) 3.42 (.135) 2.54 (.100) 3.683 (.145) MAX. 0.50 (.020) 0.41 (.016) 050-8163 Rev D 3-2010 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140) 14.73 (.580) 12.70 (.500) Gate Drain Source 1.01 (.040) 3-Plcs. 0.83 (.033) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190) 1.77 (.070) 3-Plcs. 1.15 (.045) Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.