a FEATURES Space-Saving SC70 and SOT-23 Packaging Wide Bandwidth: 8 MHz @ 5 V Low Offset Voltage: 1.2 mV Max Rail-to-Rail Output Swing 2.7 V/s Slew Rate Unity Gain Stable Single Supply Operation: 2.7 V to 12 V APPLICATIONS Portable Communications Microphone Amplifiers Portable Phones Sensor Interface Active Filters PCMCIA Cards ASIC Input Drivers Wearable Computers Battery Powered Devices Voltage Reference Buffers Personal Digital Assistants GENERAL DESCRIPTION The AD8519 and AD8529 are rail-to-rail output bipolar amplifiers with a unity gain bandwidth of 8 MHz and a typical voltage offset of less than 1 mV. The AD8519 brings precision and bandwidth to the SC70 and SOT-23 packages. The low supply current makes the AD8519/AD8529 ideal for battery powered applications. The rail-to-rail output swing of the AD8519/AD8529 is larger than standard video op amps, making them useful in applications that require greater dynamic range than standard video op amps. The 2.7 V/µs slew rate makes the AD8519/AD8529 a good match for driving ASIC inputs such as voice codecs. 8 MHz Rail-to-Rail Operational Amplifiers AD8519/AD8529 PIN CONFIGURATIONS 8-Lead SOIC (R Suffix) NC 1 AD8519 8 NC IN A 2 7 V+ +IN A 3 6 OUT A 5 NC V 4 NC = NO CONNECT 5-Lead SC70 and SOT-23 (KS and RT Suffixes) OUT A 1 AD8519 5 V+ V 2 4 IN A +IN A 3 8-Lead SOIC and SOIC (R and RM Suffixes) OUT A 1 AD8529 8 V+ –IN A 2 7 OUT B +IN A 3 6 –IN B V– 4 5 +IN B The small SC70 package makes it possible to place the AD8519 next to sensors, reducing external noise pickup. The AD8519/AD8529 is specified over the extended industrial (–40°C to +125°C) temperature range. The AD8519 is available in 5-lead SC70, SOT-23, and 8-lead SOIC surfacemount packages. The AD8529 is available in 8-lead SOIC and µSOIC packages. REV. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Powered by ICminer.com Electronic-Library Service CopyRight 2003 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000 AD8519/AD8529–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (V = 5.0 V, V– = 0 V, V S CM = 2.5 V, TA = 25C unless otherwise noted) Parameter Symbol Conditions INPUT CHARACTERISTICS Offset Voltage VOS AD8519AKS, AD8519ART –40°C ≤ TA ≤ +125°C AD8519AR (SO-8), AD8529 –40°C ≤ TA ≤ +125°C Offset Voltage VOS Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection Ratio VCM CMRR Large Signal Voltage Gain AVO Offset Voltage Drift Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low Short Circuit Current Maximum Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier ∆VOS/∆T ∆IB/∆T VOH VOL ISC IOUT PSRR ISY Min Typ Max Unit 600 800 600 1,100 1,300 1,000 1,100 300 400 ± 50 ± 100 4 µV µV µV µV nA nA nA nA V –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C 0 0 V ≤ VCM ≤ 4.0 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ, 0.5 V < VOUT < 4.5 V RL = 10 kΩ, 0.5 V < VOUT < 4.5 V RL = 10 kΩ, –40°C ≤ TA ≤ +125°C 63 50 30 100 30 100 dB V/mV V/mV V/mV µV/°C pA/°C 2 500 IL = 250 µA –40°C ≤ TA ≤ +125°C IL = 5 mA IL = 250 µA –40°C ≤ TA ≤ +125°C IL = 5 mA Short to Ground, Instantaneous 4.90 4.80 V V 80 200 ± 70 ± 25 VS = 2.7 V to 7 V, –40°C ≤ TA ≤ +125°C VOUT = 2.5 V –40°C ≤ TA ≤ +125°C 110 80 600 1,200 1,400 mV mV mA mA dB dB µA µA DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin SR tS GBP φm 1 V < VOUT < 4 V, RL = 10 kΩ To 0.01% 2.9 1,200 8 60 V/µs ns MHz Degrees NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density en p-p en in 0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz 0.5 10 0.4 µV p-p nV/√Hz pA/√Hz Specifications subject to change without notice. Powered by ICminer.com Electronic-Library Service CopyRight 2003 –2– REV. B AD8519/AD8529 ELECTRICAL CHARACTERISTICS (V = 3.0 V, V– = 0 V, V S CM = 1.5 V, TA = 25C unless otherwise noted) Parameter Symbol Conditions INPUT CHARACTERISTICS Offset Voltage VOS AD8519AKS, AD8519ART –40°C ≤ TA ≤ +125°C AD8519AR (SO-8), AD8529 –40°C ≤ TA ≤ +125°C VOS Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio IB IOS VCM CMRR Large Signal Voltage Gain AVO OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier VOH VOL PSRR ISY Min Typ Max Unit 700 900 700 1,200 1,400 1,100 1,200 300 ± 50 2 µV µV µV µV nA nA V 0 0 V ≤ VCM ≤ 2.0 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ, 0.5 V < VOUT < 2.5 V RL = 10 kΩ IL = 250 µA IL = 5 mA IL = 250 µA IL = 5 mA VS = 2.5 V to 7 V, –40°C ≤ TA ≤ +125°C VOUT = 1.5 V –40°C ≤ TA ≤ +125°C 55 20 75 20 30 dB V/mV V/mV 2.90 2.80 60 80 600 100 200 V V mV mV 1,100 1,300 dB µA µA DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin SR tS GBP φm RL = 10 kΩ To 0.01% 1.5 2,000 6 55 V/µs ns MHz Degrees NOISE PERFORMANCE Voltage Noise Density Current Noise Density en in f = 1 kHz f = 1 kHz 10 0.4 nV/√Hz pA/√Hz Specifications subject to change without notice. REV. B Powered by ICminer.com Electronic-Library Service CopyRight 2003 –3– AD8519/AD8529–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (V = 2.7 V, V– = 0 V, V S CM = 1.35 V, TA = 25C unless otherwise noted) Parameter Symbol Conditions INPUT CHARACTERISTICS Offset Voltage VOS AD8519AKS, AD8519ART –40°C ≤ TA ≤ +125°C AD8519AR (SO-8), AD8529 –40°C ≤ TA ≤ +125°C VOS Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio IB IOS VCM CMRR Large Signal Voltage Gain AVO OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier VOH VOL PSRR ISY Min Typ Max Unit 700 900 700 1,400 1,600 1,200 1,300 300 ± 50 2 µV µV µV µV nA nA V 0 0 V ≤ VCM ≤ 1.7 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ, 0.5 V < VOUT < 2.2 V RL = 10 kΩ IL = 250 µA IL = 5 mA IL = 250 µA IL = 5 mA VS = 2.5 V to 7 V, –40°C ≤ TA ≤ +125°C VOUT = 1.35 V –40°C ≤ TA ≤ +125°C 55 20 75 20 30 dB V/mV V/mV 2.60 2.50 60 80 600 100 200 V V mV mV 1,100 1,300 dB µA µA DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin SR tS GBP φm RL = 10 kΩ To 0.01% 1.5 2,000 6 55 V/µs ns MHz Degrees NOISE PERFORMANCE Voltage Noise Density Current Noise Density en in f = 1 kHz f = 1 kHz 10 0.4 nV/√Hz pA/√Hz Specifications subject to change without notice. Powered by ICminer.com Electronic-Library Service CopyRight 2003 –4– REV. B AD8519/AD8529 ELECTRICAL CHARACTERISTICS (V = 5.0 V, V– = –5 V, V S CM = 0 V, TA = 25C unless otherwise noted) Parameter Symbol Conditions INPUT CHARACTERISTICS Offset Voltage VOS AD8519AKS, AD8519ART –40°C ≤ TA ≤ +125°C AD8519AR (SO-8), AD8529 –40°C ≤ TA ≤ +125°C VCM = 0 V VCM = 0 V, –40°C ≤ TA ≤ +125°C VCM = 0 V VCM = 0 V, –40°C ≤ TA ≤ +125°C VOS Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection Ratio VCM CMRR Large Signal Voltage Gain AVO Offset Voltage Drift Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low Short Circuit Current Maximum Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier ∆VOS/∆T ∆IB/∆T VOH VOL ISC IOUT PSRR ISY Min Typ Max Unit 600 800 600 1,100 1,300 1,000 1,100 300 400 ± 50 ± 100 +4 µV µV µV µV nA nA nA nA V –5 –4.9 V ≤ VCM ≤ +4.0 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ RL = 10 kΩ –40°C ≤ TA ≤ +125°C 70 50 25 100 30 200 dB V/mV V/mV V/mV µV/°C pA/°C 2 500 IL = 250 µA –40°C ≤ TA ≤ +125°C IL = 5 mA IL = 250 µA –40°C ≤ TA ≤ +125°C IL = 5 mA Short to Ground, Instantaneous VS = ± 1.5 V to ± 6 V, –40°C ≤ TA ≤ +125°C VOUT = 0 V –40°C ≤ TA ≤ +125°C 4.90 4.80 V V –4.90 –4.80 ± 70 ± 25 60 100 600 1,200 1,400 V V mA mA dB µA µA DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin SR tS GBP φm –4 V < VOUT < +4 V, RL = 10 kΩ To 0.01% 2.9 1,000 8 60 V/µs ns MHz Degrees NOISE PERFORMANCE Voltage Noise Density Current Noise Density en in f = 1 kHz f = 1 kHz 10 0.4 nV/√Hz pA/√Hz Specifications subject to change without notice. REV. B Powered by ICminer.com Electronic-Library Service CopyRight 2003 –5– AD8519/AD8529 ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 6 V Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 6 V Differential Input Voltage3 . . . . . . . . . . . . . . . . . . . . . . ± 0.6 V Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C Operating Temperature Range . . . . . . . . . . –40°C to +125°C Junction Temperature Range . . . . . . . . . . . . –65°C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C Package Type JA* JC Unit 5-Lead SC70 (KS) 5-Lead SOT-23 (RT) 8-Lead SOIC (R) 8-Lead µSOIC (RM) 376 230 158 210 126 146 43 45 °C/W °C/W °C/W °C/W *θJA is specified for worst case conditions, i.e., θJA is specified for device soldered in circuit board for SOT-23 and SOIC packages. NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 For supply voltages less than ± 6 V the input voltage is limited to less than or equal to the supply voltage. 3 For differential input voltages greater than ±0.6 V the input current should be limited to less than 5 mA to prevent degradation or destruction of the input devices. ORDERING GUIDE Model Temperature Range Package Description Package Option Branding Information AD8519AKS* AD8519ART* AD8519AR AD8529AR AD8529ARM* –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C 5-Lead SC70 5-Lead SOT-23 8-Lead SOIC 8-Lead SOIC 8-Lead µSOIC KS-5 RT-5 SO-8 SO-8 RM-8 A3B A3A A5A *Available in reels only. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8519/AD8529 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Powered by ICminer.com Electronic-Library Service CopyRight 2003 –6– WARNING! ESD SENSITIVE DEVICE REV. B Typical Characteristics– AD8519/AD8529 600 60 VS = +5V SUPPLY CURRENT – A 40 30 20 550 500 0 1 450 0.2 0.6 0.6 0.2 INPUT OFFSET VOLTAGE – mV 1 0 Figure 1. Input Offset Voltage Distribution 2 4 6 8 10 SUPPLY VOLTAGE – Volts VS = +2.7V, +3.0V 300 50 25 12 80 120 160 200 2 3 4 1 COMMON-MODE VOLTAGE – Volts Figure 4. Input Bias Current vs. Common-Mode Voltage 80 60 40 0 2 3 4 1 COMMON-MODE VOLTAGE – Volts 5 Figure 5. Common-Mode Rejection vs. Common-Mode Voltage 60 40 30 20 5 0 225 20 270 30 100k 100M 90 90 70 80 60 70 60 50 50 10M Figure 8. CMRR vs. Frequency –7– +PSRR 30 10 100k 1M FREQUENCY – Hz PSRR 40 30 10k VS = +5V TA = +25C 80 20 1k REV. B 1M 10M FREQUENCY – Hz Figure 6. Open Loop Gain, Phase vs. Frequency 40 10k Powered by ICminer.com Electronic-Library Service CopyRight 2003 135 10 20 Figure 7. Closed Loop Gain vs. Frequency PHASE 180 20 100M 90 0 40 100k 1M 10M FREQUENCY – Hz 45 10 VS = +5V TA = +25C 100 CMRR – dB 20 GAIN 20 110 VS = +5V RL = 830 TA = +25C CL 5pF VS = +5V TA = +25C 40 100 PSRR – dB 0 25 50 75 100 125 150 TEMPERATURE – C 50 VS = +5V GAIN – dB COMMON-MODE REJECTION – dB 40 0 Figure 3. Supply Current per Amplifier vs. Temperature 120 VS = +5V TA = +25C 0 INPUT BIAS CURRENT – nA VS = +10V 500 Figure 2. Supply Current per Amplifier vs. Supply Voltage 40 CLOSED LOOP GAIN – dB 600 400 10 240 700 0 1k 10k 100k 1M FREQUENCY – Hz 10M Figure 9. PSRR vs. Frequency PHASE SHIFT – Degrees QUANTITY AMPLIFIERS 50 800 COUNT = 395 OP AMPS SUPPLY CURRENT – A VS = +5V TA = +25C AD8519/AD8529 4 VS = +5V VCM = +2.5V RL = 10k TA = +25C VIN = 50mV 40 30 OS 20 0 1 0.1% 1% 10 3 10 100 CAPACITANCE – pF 4 1k Figure 10. Overshoot vs. Capacitance Load 1.0 SETTLING TIME – s 0 3 DISTORTION < 1% 2 1 0 10k 2.0 200 AVCC = 10 150 100 AVCC = 1 50 0 100k 70 60 50 40 30 20 10 10M Figure 13. Output Impedance vs. Frequency VS = 2.5V AV = 100k en = 0.4V p-p 20mV 1k 100 FREQUENCY – Hz 10 10k Figure 14. AD8519 Voltage Noise Density 6 5 4 3 2 1 1V 20s Figure 17. No Phase Reversal Powered by ICminer.com Electronic-Library Service CopyRight 2003 1k 100 FREQUENCY – Hz 10 10k Figure 15. AD8519 Current Noise Density VS = 2.5V AVCC = 1 TA = +25C CL = 100pF RL = 10k VS = 2.5V VIN = +6V p-p AV = 1 1s Figure 16. 0.1 Hz to 10 Hz Noise VS = +5V TA = +25C 7 0 0 1M FREQUENCY – Hz 10M 8 VS = +5V TA = +25C CURRENT NOISE DENSITY – pA/ Hz VOLTAGE NOISE DENSITY – nV/ Hz 250 100k 1M FREQUENCY – Hz Figure 12. Output Swing vs. Frequency 80 VS = +5V TA = +25C VS = +5V AVCC = 1 RL = 10k TA = +25C CL = 15pF 4 Figure 11. Step Size vs. Settling Time 300 OUTPUT IMPEDANCE – 1 2 +OS 0 1% 0.1% STEP SIZE – V OVERSHOOT – % 50 5 VS = +5V TA = +25C 3 MAXIMUM OUTPUT SWING – V p-p 60 –8– 20mV 500ns Figure 18. Small Signal Transient Response REV. B AD8519/AD8529 R4 10k VS = 2.5V AVCC = 1 TA = +25C CL = 100pF R1 10k R2 10k NODE A R3 4.99k R5 10k VIN D1 1N914 D2 1N914 VOUT U2 AD8519 U1 R6 5k 500mV 50s VIRTUAL GROUND = Figure 19. Large Signal Transient Response Precision Full-Wave Rectifier Slew Rate is probably the most underestimated parameter when designing a precision rectifier. Yet without a good slew rate large glitches will be generated during the period when both diodes are off. Let’s examine the operation of the basic circuit before considering slew rate further, U1 is set up to have two states of operation. D1 and D2 diodes switch the output between the two states. State one is as an inverter with a gain of 1 and state two is a simple unity gain buffer where the output is equal to the value of the virtual ground. The virtual ground is the potential present at the noninverting node of the U1. State one is active when VIN is larger than the virtual ground. D2 is on in this condition. If VIN drops below virtual ground, D2 turns off and D1 turns on. This causes the output of U1 to simply buffer the virtual ground and this configuration is state two. So, the function of U1, which results from these two states of operation, is a half-wave inverter. The U2 function takes the inverted half-wave at a gain of two and sums it into the original VIN wave, which outputs a rectified full-wave. The AD8519 offers a unique combination of speed vs. power ratio at 2.7 V single supply, small size (SC70 and SOT-23), and low noise that make it an ideal choice for most high volume and high precision rectifier circuits. 10 Microphone Preamp, Meets PC99 Specifications This circuit, while lacking a unique topology, is anything but featureless when an AD8519 is used as the op amp. This preamp gives 20 dB gain over a frequency range of 20 Hz to 20 kHz and is fully PC99 compliant in all parameters including THD+N, dynamic range, frequency range, amplitude range, crosstalk, etc. Not only does this preamp comply with the PC99 spec it far surpasses it. In fact, this preamp has a VOUT noise of around 100 dB, which is suitable for most professional 20-bit audio systems. Referred to input noise is 120 dB. At 120 dB THD+N in unity gain the AD8519 is suitable for all 24-bit professional audio systems available today. In other words, the AD8519 will not be the limiting performance factor in your audio system despite its small size and low cost. This type of rectifier can be very precise if the following electrical parameters are adhered to: First, all passive components should be of tight tolerance, 1% resistors and 5% capacitors. Second, if the application circuit requires high impedance (i.e., direct sensor interface), then an FET amplifier is probably a better choice than the AD8519. Third, an amp such as the REV. B 2 R6 and R7 are both necessary to limit the amount of bias current related voltage offset. Unfortunately, there is no “perfect” value for R6 because the impedance at the inverting node is altered as D1 and D2 switch. Therefore, there will also be some unresolved bias current related offset. To minimize this offset, use lower value resistors or choose an FET amplifier if the optimized offset is still intolerable. <0 Powered by ICminer.com Electronic-Library Service CopyRight 2003 VCC AD8519, which has a great slew rate specification, will yield the best result, because the circuit involves switching. Switching glitches are caused when D1 and D2 are both momentarily off. This condition occurs every time the input signal is equal to the virtual ground potential. When this condition occurs the U1 stage is taken out of the VOUT equation and VOUT is equal to VIN R5 (R4储R1+R2+R3). Please note: node A should be VIN inverted or virtual ground, but in this condition node A is a simply tracking VIN. Given a sine wave input centered around virtual ground glitches are generated at the sharp negative peaks of the rectified sine wave. If the glitches are hard to notice on an oscilloscope, then raise the frequency of the sine wave till they become apparent. The size of the glitches are proportional to the input frequency, the diode turn-on potential (0.2 V or 0.65 V) and the slew rate of the op amp. The maximum power that can be safely dissipated by the AD8519/ AD8529 is limited by the associated rise in junction temperature. The maximum safe junction temperature is 150°C for these plastic packages. If this maximum is momentarily exceeded, proper circuit operation will be restored as soon as the die temperature is reduced. Operating the product in the “overheated” condition for an extended period can result in permanent damage to the device. −1 R7 3.32k Figure 20. Precision Full-Wave Rectifier APPLICATIONS INFORMATION Maximum Power Dissipation VOUT = VIN − 2 VIN AD8519 –9– AD8519/AD8529 Slew-rate-related distortion would not be present at the lower voltages because the AD8519 is so fast at 2.1 V/µs. A general rule of thumb for determining the necessary slew rate for an audio system is: Take the maximum output voltage range of the device given the design’s power rails and divide by two. In our example in Figure 21, the power rails are 2.7 V and the output is rail-to-rail: enter those numbers into the equation 2.7/2 is 1.35 V, and our minimum ideal slew rate is 1.35 V/µs. While this data sheet gives only one audio example, many audio circuits are enhanced with the use of the AD8519. Here are just a few examples, Active audio filters like bass, treble and equalizers, PWM filters at the output of audio DACs, Buffers and Summers for mixing stations, and Gain stages for volume control. 240pF +2.7V 1k Figure 22 is a schematic of a two-element varying bridge. This configuration is commonly found in pressure and flow transducers. With two-elements varying the signal will be 2⫻ as compared to a single-element varying bridge. The advantages of this type of bridge are gain setting range, no signal input equals 0 V out, and single supply application. Negative characteristics are nonlinear operation and required R matching. Given these sets of conditions, requirements and characteristics, the AD8519 can be successfully used in this configuration because of its rail-torail output and low offset. Perhaps the greatest benefits of the AD8519, when used in the bridge configuration, are the advantages it can bring when placed in a remote bridge sensor. For example, the tiny SC70 and SOT-23 packages will reduce the overall sensor size, low power allows for remote powering via batteries or solar cells, high output current drive to drive a long cable, and 2.7 V operation for two cell operation. 30.9k +2.7V C1 1F MIC IN +2.7V 3.09k 1nF NPO AD8519 46.4k RF CODEC LINE IN OR MIC IN R R R R 48k AD8519 93.1k +2.7V RF 10F-ELECT Figure 22. Two-Element Varying Bridge Amplifier Figure 21. 10⫻ Microphone Preamplifier Two-Element Varying Bridge Amplifier There are a host of bridge configurations available to designers. For a complete analysis, look at the ubiquitous bridge and its different forms. Please refer to the 1992 Amplifier Applications Guide1. 1. Adolfo Garcia and James Wong, Chapter 2, 1992 Amplifier Applications Guide. Powered by ICminer.com Electronic-Library Service CopyRight 2003 –10– REV. B AD8519/AD8529 * AD8519/AD8529 SPICE Macro-model * 10/98, Ver. 1 * TAM / ADSC * * Copyright 1998 by Analog Devices * * Refer to “README.DOC” file for License State* ment. Use of this model * indicates your acceptance of the terms and * provisions in the License * Statement. * * Node Assignments * noninverting input * | inverting input * | | positive supply * | | | negative supply * | | | | output * | | | | | * | | | | | .SUBCKT AD8519 1 2 99 50 45 * *INPUT STAGE * Q1 5 7 15 PIX Q2 6 2 15 PIX IOS 1 2 1.25E-9 I1 99 15 200E-6 EOS 7 1 POLY(2) (14,98) (73,98) 1E-3 1 1 RC1 5 50 2E3 RC2 6 50 2E3 C1 5 6 1.3E-12 D1 15 8 DX V1 99 8 DC 0.9 * * INTERNAL VOLTAGE REFERENCE * EREF 98 0 POLY(2) (99,0) (50,0) 0 .5 .5 ISY 99 50 300E-6 * * CMRR=100dB, ZERO AT 1kHz * ECM 13 98 POLY(2) (1,98) (2,98) 0 0.5 0.5 RCM1 13 14 1E6 RCM2 14 98 10 CCM1 13 14 240E-12 * * PSRR=100dB, ZERO AT 200Hz * RPS1 70 0 1E6 RPS2 71 0 1E6 CPS1 99 70 1E-5 CPS2 50 71 1E-5 EPSY 98 72 POLY(2) (70,0) (0,71) 0 1 1 RPS3 72 73 1.59E6 CPS3 72 73 500E-12 RPS4 73 98 15.9 * * POLE AT 20MHz, ZERO AT 60MHz * G1 21 98 (5,6) 5.88E-6 REV. B Powered by ICminer.com Electronic-Library Service CopyRight 2003 R1 21 98 170E3 R2 21 22 85E3 C2 22 98 40E-15 * * GAIN STAGE * G2 25 98 (21,98) 37.5E-6 R5 25 98 1E7 CF 45 25 5E-12 D3 25 99 DX D4 50 25 DX * * OUTPUT STAGE * Q3 45 41 99 POUT Q4 45 43 50 NOUT EB1 99 40 POLY(1) (98,25) 0.594 1 EB2 42 50 POLY(1) (25,98) 0.594 1 RB1 40 41 500 RB2 42 43 500 * * MODELS * .MODEL PIX PNP (BF=500,IS=1E-14,KF=5E-6) .MODEL POUT PNP (BF=100,IS=1E-14,BR=0.517) .MODEL NOUT NPN (BF=100,IS=1E-14,BR=0.413) .MODEL DX D(IS=1E-14,CJO=1E-15) .ENDS AD8519 –11– AD8519/AD8529 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead Narrow Body SOIC (SO-8) 0.1220 (3.100) 0.1063 (2.700) 0.1968 (5.00) 0.1890 (4.80) 0.1574 (4.00) 0.1497 (3.80) 8 5 1 4 0.2440 (6.20) 0.2284 (5.80) 5 0.0709 (1.800) 0.0590 (1.500) PIN 1 4 1 2 0.1181 (3.000) 0.0984 (2.500) 3 PIN 1 0.0196 (0.50) 45 0.0099 (0.25) 0.0500 (1.27) BSC 0.0374 (0.950) REF 0.0688 (1.75) 0.0532 (1.35) 0.0098 (0.25) 0.0040 (0.10) SEATING PLANE 0.0748 (1.900) REF 8 0.0500 (1.27) 0.0098 (0.25) 0 0.0160 (0.41) 0.0075 (0.19) 0.0192 (0.49) 0.0138 (0.35) 0.0512 (1.300) 0.0354 (0.900) 0.0197 (0.500) 0.0118 (0.300) 4 1 5 8 0.094 (2.40) 0.071 (1.80) 0.016 (0.40) 0.004 (0.10) 0.087 (2.20) 0.071 (1.80) 0.199 (5.05) 0.187 (4.75) PIN 1 0.0256 (0.65) BSC 0.120 (3.05) 0.112 (2.84) 0.043 (1.10) 0.031 (0.80) 0.012 (0.30) SEATING 0.006 (0.15) PLANE 4 0.007 (0.18) 0.004 (0.10) 0.006 (0.15) 0.002 (0.05) 0.012 (0.30) 0.004 (0.10) 0.018 (0.46) SEATING 0.008 (0.20) PLANE 0.120 (3.05) 0.112 (2.84) 0.043 (1.09) 0.037 (0.94) 0.011 (0.28) 0.003 (0.08) 33 27 0.028 (0.71) 0.016 (0.41) PRINTED IN U.S.A. 0.004 (0.10) 0.000 (0.00) 0.0236 (0.600) 0.0039 (0.100) 5 0.122 (3.10) 0.114 (2.90) 1 0.039 (1.00) 0.031 (0.80) 10 0 0.122 (3.10) 0.114 (2.90) 0.026 (0.65) BSC PIN 1 2 SEATING PLANE 8-Lead SOIC (RM-8) 5-Lead SC70 (KS-5) 3 0.0079 (0.200) 0.0035 (0.090) 0.0571 (1.450) 0.0354 (0.900) 0.0059 (0.150) 0.0000 (0.000) 0.053 (1.35) 0.045 (1.15) C01756a–0–9/00 (rev. B) 5-Lead SOT-23 (RT-5) Powered by ICminer.com Electronic-Library Service CopyRight 2003 –12– REV. B