AM42-0002 GaAs MMIC VSAT Power Amplifier 1.4W 14.0 - 14.5 GHz Features • • • • • • CR-15 High Linear Gain: 22 dB Typ. High Saturated Output Power: +31.5 dBm Typ. High Power Added Efficiency: 22% Typ. 50Ω=Input/Output Broadband Matched Integrated Output Power Detector High Performance Ceramic Bolt Down Package -C .70 .530 .085 10 10 .050 MIN. X 9 8 7 6 -B.159 .328 ± .010 .318 ± .010 Description 2X o .096 THRU o.004 M A B C M/A-COM’s AM42-0002 is a three-stage MMIC linear power amplifier in a ceramic bolt down style hermetic package. The AM42-0002 employs a fully matched chip with interally decoupled Gate and Drain bias networks and an output power detector. The AM42-0002 is designed to be operated from a constant voltage Drain supply. 1 2 3 4 4X .06 X 45° 5 .010 SQ. ORIENTATION TAB .115 ± .010 10 .010 ± .003 X CHAMFER 4X .050 4X .100 .33 CERAMIC .005 ± .002 The AM42-0002 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully monolithic and requires a minimum of external components. M/A-COM’s AM42-0002 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications. .040 .090 MAX -A BASE PLATE .030 Notes: (unless otherwise specified) 1. Dimensions are in inches. 2. Tolerance: .XXX = ± 0.005 .XX = ± 0.010 Ordering Information Part Number AM42-0002 Package Ceramic Bolt Down Package Electrical Specifications: TC = +25°C, VDD = +9V, VGG = -5.0V, Z0 = 50Ω, Ω,= Ω,=Frequency = 14.0-14.5 GHz Parameter Linear Gain Input VSWR Output VSWR Saturated Output Power Output Power @ Abbv. GL VSWRIN VSWROUT PSAT P1dB Test Conditions PIN ≤ 0 dBm PIN ≤=0=dBm — PIN = +14 dBm Units dB — — dBm dBm Min. 19 — — 30.5 — Typ. 22 2.5:1 2.7:1 31.5 29.5 Max. — 2.7:1 — — — Output Third Order Intercept Power Added Efficiency Bias Currents IP3 PAE IDD (Refer to Note 1) PIN = +14 dBm PIN = +14 dBm dBm % mA — — — 41 22 950 — — 1400 Thermal Resistance Detector Output Voltage θJC Vdet 25°C Heat Sink RL=10KΩ=min.= °C/W V — — 9.5 +3.5 — — IP3 is measured with two +21 dBm output tones @ 1 MHz spacing. Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. V 3.0 1 GaAs MMIC VSAT Power Amplifier 1.4W, 14.0 - 14.5 GHz Absolute Maximum Ratings1,2,3,4 Parameter VDD VGG Power Dissipation RF Input Power Channel Temperature Storage Temperature Ids Typical Bias Configuration3,4,7,8 Absolute Maximum 12 Volts -10 Volts 13.2 W +23 dBm 150°C -65°C to +150°C 1900 mA 1. Operation of this device outside any of these limits may cause permanent damage. 2. Case Temperature (TC) = +25°C. 3. Nominal bias is obtained by first connecting -5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 5. No dc bias voltage appears at the RF ports. 6. The dc resistance at the input port is an open circuit and at the ouput port is a short circuit. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of pin 6. 8. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0002. Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. AM42-0002 10 K Ω V det 7 V µF DD 3.3 6 0.01 µ F 8 3 IN OUT AM42-0002 0.01 µ F GND 1,2,5,9,10 4 V GG Pin No. Pin Name Description 1 GND DC and RF Ground 2 GND DC and RF Ground 3 IN 4 VGG Gate Supply 5 GND DC and RF Ground 6 VDD Voltage Drain Supply 7 Vdet Output Power Detector 8 OUT RF Output 9 GND DC and RF Ground 10 GND DC and RF Ground RF Input V 3.0 2 GaAs MMIC VSAT Power Amplifier 1.4W, 14.0 - 14.5 GHz AM42-0002 Typical Performance @ +25°C Test Conditions are listed in the section “Electrical Specifications”. 25 Linear Gain vs. Frequency 0 Input and Output Return Loss vs. Frequency Return Loss (dB) Linear Gain (dB) S11 15 5 -5 -15 -5 -10 S22 -15 -20 10 12 14 16 10 18 6 50 32 40 30 30 28 20 26 10 14 16 Detector Voltage vs. Output Power @ 14.25 GHz 4 3 2 1 0 0 24 12 19 18 21 23 Output Power vs. Frequency @ PIN = +14dBm 50 32 27 31 29 33 Power Added Efficiency vs. Frequency @ PIN=+14dBm 40 30 PAE (%) Output Power (dBm) 25 POUT (dBm) Input Power (dBm) 34 18 5 VDET (V) Output Power (dBm) Output Power & PAE vs. Input Power @ 14.25 GHz 10 16 Frequency (GHz) Frequency (GHz) 34 14 12 28 30 20 26 10 22 20 0 12 13 14 15 16 Frequency (GHz) Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 12 13 14 15 16 Frequency (GHz) V 3.0 3