ICs for Mobile Communication AN6105FHN Quadrature demodulation IC for CDMA system mobile telephone Unit: mm 3C 9 8 (3.00) (0.42) 13 5 16 1 (0.55) 4 2.00±0.10 0.10 3.00±0.10 (1.35) 4 1 ■ Applications (0 5 16 8 13 12 0.60±0.10 • Cellular telephone (IS-95) Seating plane 0.50 9 .1 5) (0.33) (0.85) • Current consumption: 11 mA typ. • Gain control range: +85 dB to −5 dB • High linearity control characteristic: ±3 dB • Temperature dependency: ±3 dB 0.20±0.10 R0.30 ■ Features 3.20±0.10 12 0. 50 4.20±0.10 (4.00) The AN6105FHN is a quadrature demodulation IC for a CDMA system mobile telephone, incorporating a reception IF for IS-95 and GCA plus quadrature demodulator. 0.80 max. ■ Overview (0.58) 0.20±0.06 0.10 M QFN016-P-0304A (Lead-free package) I out 1/2 π/2 6 15 16 3 4 I-IX adjustment 2 VREF (I, Q) adjustment GCA GND Publication date: October 2002 5 Offset adjustment 1 IF in X 9 7 14 GCA IF in 10 2nd local 8 GCA control Q-QX adjustment GCA VCC 13 11 Sleep 12 Gain control B.B GND ■ Block Diagram SDM00005BEB IX out B.B VCC Q out QX out 1 AN6105FHN ■ Pin Descriptions Pin No. Description Pin No. Description 1 GND (GCA) 9 I output 2 I, Q output operating point adjustment 10 GND (base band) 3 Q operating point offset adjustment 11 Local signal input 4 I operating point offset adjustment 12 Sleep 5 Q output 13 Gain adjustment 6 Q output 14 Supply voltage (GCA) 7 Supply voltage (base band) 15 Signal input (+) 8 I output 16 Signal input (−) ■ Absolute Maximum Ratings Parameter Supply voltage Supply current Power dissipation *2 Operating ambient temperature Storage temperature *1 *1 Symbol Rating Unit VCC 4.2 V ICC 24 mA PD 100 mW Topr −30 to +85 °C Tstg −55 to +125 °C Note) *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C. *2: PD is the value at Ta = 85°C without a heatsink. Use this device within the range of allowable power dissipation referring to "■ Technical Data • PD Ta curves of QFN016-P-0304". ■ Recommended Operating Range Parameter Supply voltage Symbol Range Unit VCC 2.55 to 4.00 V ■ Electrical Characteristics at Ta = 25°C Unless otherwise specified, VCC = 2.8 V, VSLP = 2.8 V, VGC = 2.5 V, VLO = −10 dBm: f = 223.7 MHz, VIN: f = 112.35 MHz, VI , VIX , VQ , VQX: f = 500 kHz, a measurement in high impedance be made for VI , VIX , VQ and VQX . Parameter 2 Symbol Conditions Min Typ Max Unit Current consumption ITOT VIN , VLO: No input 6 11 15 mA Current consumption (sleep) ISLP VIN , VLO: No input, V12 = 0 V 0 10 µA Conversion gain 1 GC(1) Conversion gain between VIN and VI VGC = 2.5 V, VIN = 5 dBµV 80 85 90 dB Conversion gain 2 GC(2) Conversion gain between VIN and VI VGC = 0.1 V, VIN = 85 dBµV −18 −12 −9 dB IQ maximum output VIQ Output level of VI , VIX , VQ and VQX VGC = 2.5 V, VIN = 40 dBµV 1 1.8 V[p-p] Noise figure NF VGC = 2.5 V 7 8.5 dB SDM00005BEB AN6105FHN ■ Electrical Characteristics at Ta = 25°C (continued) Unless otherwise specified, VCC = 2.8 V, VSLP = 2.8 V, VGC = 2.5 V, VLO = −10 dBm: f = 223.7 MHz, VIN: f = 112.35 MHz, VI , VIX , VQ , VQX: f = 500 kHz, a measurement for high impedance be made for VI , VIX , VQ and VQX . Parameter Symbol Conditions Min Typ Max Unit Input IP3 IIP3 Input IP3 value at 60 dB ± 1 dB of conversion gain 65 69 dBµV Gain adjustment sensitivity βGCA Gain variation at VGC = 0.5 V to 2.5 V 42 45 48 dB/V Quadrature demodulation error IQERR VGC = 1.5 V, VIN = 47 dBµV −25 −20.5 dB −20 −10 −7 dBm Local signal input level VLO Sleep control (low) VSLP(1) Voltage to get ITOT of 10 µA and less 0.2 V Sleep control (high) VSLP(2) Voltage for an operating mode 2.3 V 0.1 2.6 V Gain adjustment voltage VGC IQ operating point voltage VIQ DC operating point voltage at no adjustment for IQ output (pin 5, pin 6, pin 8 and pin 9) 1.2 1.5 1.7 V ∆VIQ DC operating point voltage difference between VI-VIX and VQ-VQX (at no adjustment) −250 0 250 mV IQ operating point deviation • Design reference data Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Parameter Symbol Conditions IQ output deviation ∆VIQ Level ratio between IQ signals (differential), VGC = 1.5 V, VIN = 47 dBµV IQ output phase difference ∆θIQ Phase difference between IQ signals (differential), VGC = 1.5 V, VIN = 47 dBµV Min Typ Max Unit − 0.8 0 0.8 dB 85 90 95 deg ■ Terminal Equivalent Circuits Pin No. Equivalent circuit Description 1 VCC 2, 3, 4 20 kΩ 20 kΩ DC voltage (V) GND (GCA): Ground pin of GCA system. Pin 2: I, Q output operating point adjustment: Pin to adjust an operating point voltage 1.9 of IQ output (pin 5, pin 6, pin 8 and pin 9).; Pin 2, 3, 4 150 kΩ Pin3: Q operating point offset adjustment: Pin to adjust an offset voltage between Q, 40 kΩ 40 kΩ Q output (pin 5, pin 6).; Pin 4: I operating point offset adjustment: Pin to adjust an offset voltage between I, I output (pin 8, pin 9). SDM00005BEB 3 AN6105FHN ■ Terminal Equivalent Circuits (continued) Pin No. Equivalent circuit 5, 6 Description VCC Pin 5: Q output: DC voltage (V) 1.5 Pin to output the Q signal.; Pin 6: Q output: Pin to output the Q signal. Pin 5, 6 7 8, 9 VCC Supply voltage (base band): Supply voltage pin of base band system. 2.8 Pin 8: I output: 1.5 Pin to output the I signal.; Pin 9: I output: Pin to output the I signal. Pin 8, 9 10 11 VCC 2 kΩ GND (base band): Ground pin of base band system. Local signal input: Input pin of local signal for IQ demodu- 2.7 lation. 11 12 Sleep: Operating mode: Connect this pin to supply 150 kΩ 12 4 voltage pin. Sleep mode: Connect to GND. SDM00005BEB AN6105FHN ■ Terminal Equivalent Circuits (continued) Pin No. Equivalent circuit Description VCC 13 Gain adjustment: Adjusts gain. Possible to apply voltage 13 DC voltage (V) 0 from 0 to a supply voltage. 64 kΩ 56 kΩ 14 VCC 15, 16 2 kΩ 15 Supply voltage (GCA): Supply voltage pin of GCA system. Pin 15: Signal input (+): Pin to input IF signal. 1.2 Impedance matching is required.; Pin 16: Signal input (−): 2 kΩ 16 AC grounding with a capacitor. 1.2 V ■ Usage Note There are two systems of a supply voltage pin for this device. (Pin 7, pin 14) Apply the same voltage simultaneously to these two pins on use. (Keep either of them from being off.) ■ Technical Data • PD Ta curves of QFN016-P-0304A PD Ta 0.600 0.584 Power dissipation PD (W) 0.500 Mounted on standard board (glass epoxy: 50 mm × 50 mm × t0.8 mm) Rth(j-a) = 171.2°C/W 0.400 0.300 0.251 Independent IC without a heat shink Rth(j-a) = 397.4°C/W 0.200 0.100 0.000 0 25 50 75 100 125 Ambient temperature Ta (°C) SDM00005BEB 5 AN6105FHN 6 16 5 3 4 I-IX adjustment VREF (I, Q) adjustment 2 Offset adjustment GCA GND 6 I out 1/2 π/2 15 1 IF in X 9 7 14 GCA IF in 10 2nd local 8 GCA control Q-QX adjustment GCA VCC 13 11 Sleep 12 Gain control B.B GND ■ Application Circuit Example SDM00005BEB IX out B.B VCC Q out QX out Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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