ETC AT-309PIN

Voltage Variable Absorptive Attenuator, 20 dB
AT-309
DC - 2 GHz
V 2.00
SO-8
Features
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20 dB Voltage Variable Attenuation
Very Low Power Consumption: 50 µW
Low Intermodulation Products
Dual Voltage Control 0 to -4 Volts
Nanosecond Switching Speed
Temperature Range: -40˚C to +85˚C
Low Cost SOIC8 Plastic Package
Tape and Reel Packaging Available1
Description
M/A-COM’s AT-309 is a GaAs MMIC voltage variable absorptive
attenuator in a low cost SOIC 8-lead surface mount plastic
package. The AT-309 is ideally suited for use where attenuation
fine tuning, fast switching and very low power consumption
are required. Typical applications include radio, cellular, and
GPS equipment and other Automatic Gain/Level Control circuits.
The AT-309 is fabricated with a monolithic GaAs MMIC using
a mature 1-micron process. The process features full chip passivation for increased performance and reliability.
Ordering Information
Part Number
AT-309 PIN
AT-309TR
AT-309RTR
Package
SOIC 8-Lead Plastic Package
Forward Tape & Reel
Reverse Tape & Reel
Electrical Specifications, TA = +25°C
Parameter
Test Conditions2
Insertion Loss
DC – 0.1 GHz
DC – 0.5 GHz
DC – 1.0 GHz
DC – 2.0 GHz
DC – 0.1 GHz
DC – 0.5 GHz
DC – 1.0 GHz
DC – 2.0 GHz
IP2
IP3
Min.
dB
dB
dB
dB
dB
dB
dB
dB
Typ.
Max
0.9
1.0
1.2
1.4
+/-0.8
+/-0.8
+/-1.0
+/-1.2
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, 50% Control to 10% RF
In Band
Input Power (Over Attenuation Range)
nS
nS
mV
dBm
0.7
0.8
0.9
1.2
+/-0.5
+/-0.5
+/-0.8
+/-1.0
1.4:1
6
8
10
5
Measured Relative (Over Attenuation Range)
to Input Power
(Over Attenuation Range)
(for two-tone input power up to +5 dbm)
Measured Relative (Over Attenuation Range)
to Input Power (Over Attenuation Range)
(for two-tone input power up to +5 dbm)
0.05 GHz
0.5 – 2.0 GHz
dBm
dBm
47
40
0.05 GHz
0.5 – 2.0 GHz
dBm
dBm
39
32
Flatness
(Peak to Peak)
VSWR (Matched)
Trise, Tfall
Ton, Toff
Transients
One dB
Compression
Unit
1.Refer to “Tape and Reel Packaging”Section, or contact factory.
2.All measurements at 1 GHz in a 50Ω system, unless otherwise specified.The A and B control voltages vary 0 to -4V @ 20 µA typ.
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Voltage Variable Absorptive Attenuator, 20 dB
AT-309
V 2.00
Functional Schematic
Absolute Maximum Ratings1
Parameter
Absolute Maximum
Max. Input Power
50 MHz
500-2000 MHz
Control Voltage
Operating Temperature
Storage Temperature
+27 dBm
+30 dBm
+5V, -8.5V
-40°C to +85°C
-65°C to +150°C
1.Operation of this device above any one of these parameters may cause
permanent damage.
Electrical Schematic
RF 1
Q3
Q1
Q2
A
B
Typical Performance
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RF 2
Pin Configuration
Pin No.
Description
1
GND
2
RF1
3
GND
4
A
5
B
6
GND
7
RF2
8
GND