DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP64-06W Silicon PIN diode Product specification Supersedes data of 2001 Feb 02 2001 Apr 17 Philips Semiconductors Product specification Silicon PIN diode BAP64-06W FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF attenuators and switches 1 cathode 1 • Low diode capacitance 2 cathode 2 • Low diode forward resistance 3 common connection • Low series inductance • For applications up to 3 GHz. handbook, halfpage APPLICATIONS 3 3 • RF attenuators and switches. 2 DESCRIPTION 1 Top view Two planar PIN diodes in common anode configuration in a SOT323 small SMD plastic package. 1 2 MGU320 Marking code: V4-. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage IF continuous forward current Ptot total power dissipation Tstg Tj 2001 Apr 17 − 100 V − 100 mA − 240 mW storage temperature −65 +150 °C junction temperature −65 +150 °C Ts = 90 °C 2 Philips Semiconductors Product specification Silicon PIN diode BAP64-06W ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage IR reverse current Cd rD |s21|2 |s21|2 |s21|2 |s21|2 |s21|2 diode capacitance diode forward resistance isolation insertion loss insertion loss insertion loss insertion loss IF = 50 mA 0.95 1.1 V VR = 100 V − 10 µA VR = 20 V − 1 µA VR = 0; f = 1 MHz 0.52 − pF VR = 1 V; f = 1 MHz 0.37 − pF VR = 20 V; f = 1 MHz 0.23 0.35 pF IF = 0.5 mA; f = 100 MHz; note 1 20 40 Ω IF = 1 mA; f = 100 MHz; note 1 10 20 Ω IF = 10 mA; f = 100 MHz; note 1 2 3.8 Ω IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 Ω VR = 0; f = 900 MHz 18.5 − dB VR = 0; f = 1800 MHz 13.5 − dB VR = 0; f = 2450 MHz 10.9 − dB IF = 0.5 mA; f = 900 MHz 1.86 − dB IF = 0.5 mA; f = 1800 MHz 2.06 − dB IF = 0.5 mA; f = 2450 MHz 2.23 − dB IF = 1 mA; f = 900 MHz 1.01 − dB IF = 1 mA; f = 1800 MHz 1.06 − dB IF = 1 mA; f = 2450 MHz 1.10 − dB IF = 10 mA; f = 900 MHz 0.19 − dB IF = 10 mA; f = 1800 MHz 0.21 − dB IF = 10 mA; f = 2450 MHz 0.27 − dB IF = 100 mA; f = 900 MHz 0.08 − dB IF = 100 mA; f = 1800 MHz 0.10 − dB IF = 100 mA; f = 2450 MHz 0.16 − dB τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA 1.55 − µs LS series inductance IF = 100 mA; f = 100 MHz 1.6 − nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 2001 Apr 17 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 250 K/W Philips Semiconductors Product specification Silicon PIN diode BAP64-06W GRAPHICAL DATA MLD596 103 handbook, halfpage MLD597 600 handbook, halfpage rD (Ω) Cd (fF) 102 400 10 200 1 10−1 10−1 1 10 IF (mA) 0 102 0 4 f = 100 MHz; Tj = 25 °C. f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 Forward resistance as a function of forward current; typical values. MLD598 0 handbook, halfpage s 2 21 (dB) −1 (1) 8 12 16 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. MLD599 0 handbook, halfpage s 2 21 (dB) −5 (2) (3) (4) −2 −10 −3 −15 −4 −20 −5 0.5 (1) IF = 100 mA. (2) IF = 10 mA. 1 1.5 2 2.5 f (GHz) −25 0.5 3 2 2.5 f (GHz) 3 Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Insertion loss (|s21|2) of the diode as a function of frequency; typical values. 2001 Apr 17 1.5 (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network; Tamb = 25 °C. Fig.4 1 Fig.5 4 Isolation (|s21|2) of the diode as a function of frequency; typical values. Philips Semiconductors Product specification Silicon PIN diode BAP64-06W MLD600 150 handbook, halfpage IP2 (dB) 1800 MHz 100 900 MHz 50 0 10−1 1 IF (mA) 10 Tamb = 25 °C; typical values. Fig.6 Second order intercept point as a function of forward current; typical values. 2001 Apr 17 5 Philips Semiconductors Product specification Silicon PIN diode BAP64-06W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Apr 17 REFERENCES IEC JEDEC EIAJ SC-70 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification Silicon PIN diode BAP64-06W DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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