ETC BC337/D

ON Semiconductor
Amplifier Transistors
BC337,-16,-25,-40
BC338,-16,-25,-40
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC337
BC338
Unit
Collector–Emitter Voltage
VCEO
45
25
Vdc
Collector–Base Voltage
VCBO
50
30
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
800
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
–55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
45
25
—
—
—
—
50
30
—
—
—
—
5.0
—
—
—
—
—
—
100
100
—
—
—
—
100
100
—
—
100
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 100 µA, IE = 0)
V(BR)CEO
BC337
BC338
V(BR)CES
BC337
BC338
Emitter–Base Breakdown Voltage
(IE = 10 A, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
BC337
BC338
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
BC337
BC338
February, 2001 – Rev. 1
Vdc
ICBO
IEBO
1
Vdc
nAdc
ICES
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
 Semiconductor Components Industries, LLC, 2001
Vdc
nAdc
nAdc
Publication Order Number:
BC337/D
BC337,–16,–25,–40 BC338,–16,–25,–40
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
100
100
160
250
60
—
—
—
—
—
630
250
400
630
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
hFE
—
BC337/BC338
BC337–16/BC338–16
BC337–25/BC338–25
BC337–40/BC338–40
(IC = 300 mA, VCE = 1.0 V)
Base–Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
VBE(on)
—
—
1.2
Vdc
Collector–Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
—
—
0.7
Vdc
Cob
—
15
—
pF
fT
—
210
—
MHz
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03
P(pk)
SINGLE PULSE
0.01
t1
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.02
0.01
0.001
θJC(t) = (t) θJC
θJC = 100°C/W MAX
θJA(t) = r(t) θJA
θJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t, TIME (SECONDS)
1.0
Figure 1. Thermal Response
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2
2.0
5.0
10
20
50
100
BC337,–16,–25,–40 BC338,–16,–25,–40
1.0 s
1.0 ms
1000
TJ = 135°C
100 µs
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
1000
dc
TC = 25°C
dc
TA = 25°C
100
10
1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
3.0
10
30
VCE, COLLECTOR-EMITTER VOLTAGE
VCE = 1 V
TJ = 25°C
100
10
0.1
100
1.0
10
100
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
1.0
1.0
TJ = 25°C
TA = 25°C
0.8
0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region — Safe Operating Area
0.6
IC = 10 mA
0.4
100 mA
300 mA
500 mA
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
0.6
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
0
100
1
Figure 4. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 5. “On” Voltages
100
+1
θVC for VCE(sat)
0
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1000
-1
θVB for VBE
-2
1
10
100
IC, COLLECTOR CURRENT (mA)
Cib
10
Cob
1
0.1
1000
Figure 6. Temperature Coefficients
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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3
100
BC337,–16,–25,–40 BC338,–16,–25,–40
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
N
N
SECTION X–X
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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4
BC337/D