BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5 For medium power amplifiers Maxim. available Gain Gma = 17 dB at 1.8 GHz 3 Gold metallization for high reliability 2 70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP690 Marking R9s 1=B Pin Configuration 2=E 3=C 4=C 5=E Package - SCT595 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 4 Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 350 Base current IB 20 Total power dissipation1) Ptot 1000 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 80°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 60 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Oct-30-2002 BFP690 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 4 4.5 - V ICBO - - 100 nA IEBO - - 10 µA hFE 100 180 250 - DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 A Collector-base cutoff current VCB = 5 V, IE = 0 A Emitter-base cutoff current VEB = 0.5 V, IC = 0 A DC current gain IC = 200 mA, VCE = 3 V 2 Oct-30-2002 BFP690 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT Unit - 37 - GHz Ccb - 0.6 - pF Cce - 1.25 - Ceb - 3 - I C = 200 mA, V CE = 3 V, f = 0.5 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz Collector emitter capacitance VCE = 3 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F I C = 35 mA, VCE = 3 V, f = 1.8 GHz, ZS = Z Sopt I C = 35 mA, VCE = 3 V, f = 3 GHz, ZS = Z Sopt Power gain, maximum available 1) - 1 - - 1.2 - - 17.5 - - 13 - Gma I C = 200 mA, V CE = 3 V, Z S = ZSopt, Z L = ZLopt, f = 1.8 GHz I C = 200 mA, V CE = 3 V, Z S = ZSopt, Z L = ZLopt, f = 3 GHz |S21e|2 Transducer gain dB I C = 200 mA, V CE = 3 V, Z S = ZL = 50 , f = 1.8 GHz - 11 - I C = 200 mA, V CE = 3 V, Z S = ZL = 50 , f = 3 GHz - 6.5 - IP3 - 29 - P-1dB - 19.5 - Third order intercept point at output 2) dBm VCE = 3 V, IC = 200 mA, f = 1.8 GHz, Z S = ZL = 50 1dB Compression point at output I C = 200 mA, V CE = 3 V, Z S = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21 / S12| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 Oct-30-2002 BFP690 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 1.41 1000 2 2 1.8 0.3836 1.592 1.9 2.9 0.6 0.2 0.27 3 fA - 2 -0.0065 - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = KF = TITF2 V - fF ps A V ns - 450 0.9 40 45 0.4442 0.14 0.8 5 0 0.5 688.1 -1.42 0.8 1.046E-11 1.0E-5 A mA V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 145 1 1.2 10.61 0.4312 0.3 0.6 477.5 1 0.6 1.078 298 fA pA mA V fF V eV K All parameters are ready to use, no scalling is necessery. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: R C B S C B C C L C C C B F P 6 9 0 _ C h ip S B B L B B L B C R C C S C B E C L C B E R C E S L E C L E B C C E O T = 2 5 °C Itf = 2 9 0 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 ) E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes C LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CCEO = RBS = RCS = RES = 15 4 4 900 700 130 864.4 399.9 450 535 135 130 190 340 340 pH pH pH pH pH pH fF fF fF fF fF fF Valid up to 6GHz 4 Oct-30-2002 BFP690 Total power dissipation Ptot = (TS ) Permissible Pulse Load RthJS = (tp ) 10 2 1100 mW 900 K/W RthJS P tot 800 700 600 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 500 400 300 200 100 0 0 15 30 45 60 75 90 105 120 °C 10 0 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS °C 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb = (VCB ) Ptotmax/PtotDC = (tp) f = 1MHz 10 2 2 1.6 - 1.4 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 CCB Ptotmax/ PtotDC pF 1.2 1 0.8 0.6 0.4 0.2 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 V 13 VCB 5 Oct-30-2002 BFP690 Transition frequency fT = (IC) Power Gain Gma , Gms = (f), f = 0.5GHz |S21|² = f (f) VCE = parameter in V VCE = 3V, IC = 200mA 45 55 dB GHz 45 35 40 30 35 G fT 3 to 4 25 30 Gms 25 20 20 15 2 15 10 10 0 0.7 50 100 150 200 250 300 mA |S21|² 5 1 5 0 0 Gma -5 0 400 1 2 3 GHz 4 IC 6 f Power gain Gma, Gms = (IC ) Power gain Gma, Gms = (VCE ) VCE = 3V IC = 200mA f = parameter f = parameter in GHz 28 dB 30 dB 24 0.9 0.9 22 20 18 1.8 16 2.4 15 3 2.4 14 4 3 12 10 4 8 5 10 5 6 5 6 6 4 0 1.8 G G 20 50 100 150 200 250 300 mA 0 0.5 400 IC 1 1.5 2 2.5 3 3.5 V 4.5 VCE 6 Oct-30-2002