ETC BU323AP/D

ON Semiconductor
BU323AP
NPN Silicon Darlington Power
Transistor
DARLINGTON
NPN SILICON
POWER TRANSISTOR
400 VOLTS
125 WATTS
The BU323AP is a monolithic darlington transistor designed for
automotive ignition, switching regulator and motor control
applications.
• Collector–Emitter Sustaining Voltage —
•
•
•
VCER(sus) = 475 Vdc
125 Watts Capability at 50 Volts
VCE Sat Specified at –
40C = 2.0 V Max. at IC = 6.0 A
Photoglass Passivation for Reliability and Stability
COLLECTOR
BASE
≈1k
≈ 30
EMITTER
CASE 340D–02
TO–218 TYPE
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MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO(sus)
400
Vdc
Collector–Emitter Voltage
VCEV
475
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
— Peak (Note 1)
IC
ICM
10
16
Adc
Base Current — Continuous
— Peak (Note 1)
IB
IBM
3.0
Adc
Total Power Dissipation — TC = 25C
— TC = 100C
Derate above 25C
PD
125
100
1.0
Watts
Watts
W/C
TJ, Tstg
–65 to +200
C
Symbol
Max
Unit
RθJC
1.0
C/W
TL
275
C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 10
1
Publication Order Number:
BU323AP/D
BU323AP
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS1
Collector–Emitter Sustaining Voltage (Figure 1)
L = 10 mH
(IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO)
VCEO(sus)
Collector–Emitter Sustaining Voltage (Figure 1)
(IC = 3 A, RBE = 100 Ohms, L = 500 µH)
Unclamped
VCER(sus)
Vdc
400
Vdc
475
Collector Cutoff Current (Rated VCER, RBE = 100 Ohms)
ICER
1
mAdc
Collector Cutoff Current (Rated VCBO, IE = 0)
Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)
ICBO
1
mAdc
IEBO
40
mAdc
ON CHARACTERISTICS1
DC Current Gain
(IC = 3 Adc, VCE = 6 Vdc)
(IC = 6 Adc, VCE = 6 Vdc)
(IC = 10 Adc, VCE = 6 Vdc)
hFE
300
150
50
Collector–Emitter Saturation Voltage
(IC = 3 Adc, IB = 60 mAdc)
(IC = 6 Adc, IB = 120 mAdc)
(IC = 10 Adc, IB = 300 mAdc
(IC = 6 Adc, IB = 120 mAdc, TC = –40C)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 6 Adc, IB = 120 mAdc)
(IC = 10 Adc, IB = 300 mAdc)
(IC = 6 Adc, IB = 120 mAdc, TC = –40C)
VBE(sat)
Base–Emitter On Voltage (IC = 10 Adc, VCE = 6 Vdc)
VBE(on)
550
350
150
2000
Vdc
1.5
1.7
2.7
2.0
Vdc
2.2
3
2.4
Diode Forward Voltage (IF = 10 Adc)
2.5
Vdc
Vf
2
3.5
Vdc
Cob
165
350
pF
ts
7.5
15
µs
tf
5.2
15
µs
IS/B
See
Figure
10
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS
Storage Time
Fall Time
(VCC = 12 Vdc, IC = 6 Adc,
IB1 = IB2 = 0.3 Adc) Fig. 2
FUNCTIONAL TESTS
Second Breakdown Collector Current with
Base–Forward Biased
Pulsed Energy Test (See Figure 12)
1Pulse
IC2L/2
Test: Pulse Width = 300 µs, Duty Cycle = 2%.
http://onsemi.com
2
550
mJ
BU323AP
VCC = 16 Vdc
UNCLAMPED
L
0V
t1
ftest = 200 Hz
PULSE WIDTH = 1 ms
*
470
* Adjust t1 such that
* IC reaches Required
* value.
C
C
1N4001
B
BC337
VCEO
2 Ω/20 W
IC = 6 Adc
0 Vdc
CLAMPED
47
20 ms
VCC = 12 Vdc
≈ 15 Vdc
VCER
100
40
TUT
≈ 1K
≈ 30
TUT
1N4001
Vclamp
*
B
51
100
≈ 1K
≈ 30
E
E
IB = 0.3 Adc
Figure 1. Sustaining Voltage Test Circuit
Figure 2. Switching Times Test Circuit
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3
BU323AP
TJ = 150°C
hFE, DC CURRENT GAIN
1000
700
500
25°C
300
200
100
70
50
VCE = 3 Vdc
VCE = 6 Vdc
30
20
0.1
0.2
0.3
0.5 0.7 1
2
3
IC, COLLECTOR CURRENT (AMP)
5
7
3
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2000
10
TJ = 25°C
2.5
2
10 A
1.5
1
0.5
0.002
1.7
1.6
1.5
IC/IB = 50
TJ = 25°C
1.4
1.3
1.2
1.1
1.0
0.9
TJ = -40°C
0.8
0.7
0.6
0.5
0.1
0.2
0.5
1.0
0.005 0.01
2.0
10
5.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
µ
t, TIME (s)
µ
tf
TJ = 25°C
IC/IB = 20
VCE = 12 Vdc
0.3
0.2
0.1
0.2
0.3
2
TJ = 25°C
TJ = -40°C
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.1
0.2
0.5
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (A)
104
3
1
0.7
0.5
1
Figure 6. Base–Emitter Voltage
ts
2
0.5
2.2
2.1
2.0
Figure 5. Collector–Emitter Saturation Voltage
10
7
5
0.02
0.05 0.1 0.2
IB, BASE CURRENT (AMP)
Figure 4. Collector Saturation Region
VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (V)
VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Figure 3. DC Current Gain
6
3
IC = 0.5 A
0.5 0.7 1
3
5 7
2
IC, COLLECTOR CURRENT (AMP)
10
VCE = 250 Vdc
TJ = 150°C
103
IC = ICES
102
101
100
75°C
25°C
FORWARD
10-1 REVERSE
-0.2
0
+0.2
+0.4
+0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
20
Figure 7. Turn–Off Switching Time
Figure 8. Collector Cutoff Region
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4
+0.8
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
BU323AP
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.01
0.02
0.01
0.01
P(pk)
RθJC(t) = r(t) RθJC
RθJC = °C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
0.05
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.05
0.02
0.1
0.2
1
0.5
2
5
t, TIME (ms)
10
20
50
100
200
500
1000
2000
IC, COLLECTOR CURRENT (AMP)
Figure 9. Thermal Response
20
10
100 µs
5.0 ms
5
2
1
1.0 ms
0.2
dc
0.1
0.01
0.005
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on TC = 25C, TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found at
any case temperature by using the appropriate curve on
Figure 11.
TJ(pk) may be calculated from the data in Figure 11. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
TC = 25°C
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
5
50 70 100
200 300
10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
Figure 10. Forward Bias Safe Operating Area
50
INDUCTIVE LOAD
POWER DERATING FACTOR (%)
100
VCC = 16 Vdc
SECOND BREAKDOWN
DERATING
80
60
VZ
t1
0 Vdc
47
50 ms
THERMAL
DERATING
11 mH
<1
C
1N4001
470
40
TUT
BC337
≈ 1K
≈ 30
100
VZ = 350 V (BU323P)
VZ = 400 V (BU323AP)
at IZ = 20 mA
20
0
0
40
80
120
TC, CASE TEMPERATURE (°C)
160
200
2.2
B
0.22
µF
1N4001
E
t1 to be selected such that IC reaches 10 Adc before switch–off.
NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit.
Figure 11. Power Derating
Figure 12. Ignition Test Circuit
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5
BU323AP
PACKAGE DIMENSIONS
CASE 340D–02
TO–218 TYPE
ISSUE B
C
Q
B
U
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
4
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
A
L
1
K
2
3
D
J
H
MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
V
G
STYLE 1:
PIN 1.
2.
3.
4.
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6
BASE
COLLECTOR
EMITTER
COLLECTOR
INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
BU323AP
Notes
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7
BU323AP
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BU323AP/D