IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer CSC2690, CSC2690A TO-126 (SOT-32) Plastic Package CSC2690, 2690A NPN PLASTIC POWER TRANSISTORS Complementary CSA1220, 1220A Audio frequency, High Frequency and Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 1A; IB = 0.2 A D.C. current gain IC = 0.3 A; VCE = 5 V VCBO VCEO IC Ptot Tj 2690 max. 120 max. 120 max. max. max. 2690A 160 V 160 V 1.2 A 20 W 150 °C VCEsat max. 0.7 hFE min. max. 60 320 V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Continental Device India Limited VCBO VCEO Data Sheet 2690 max. 120 max. 120 2690A 160 V 160 V Page 1 of 3 CSC2690, CSC2690A Emitter-base voltage (open collector) Collector current (DC) Collector current (Pulse) (1) Base current (DC) Total power dissipation up to TA = 25°C Total power dissipation up to TC = 25°C Junction temperature Storage temperature VEBO IC IC IB Ptot Ptot Tj T stg max. max. max. max. max. max. max. CHARACTERISTICS T amb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 120V Emitter cut-off current IC = 0; VEB = 3V Breakdown voltages IC = 1 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 1 A; IB = 0.2 A D.C. current gain IC = 5 mA; VCE = 5 V IC = 0.3 A; VCE = 5 V** Output capacitance at f = 1MHz IE = 0, VCB = 10V Transition frequency IC = 0.2 A; VCE = 5 V 5.0 1.2 2.5 0.3 1.2 20 150 –65 to +150 2690 V A A A W W ºC ºC 2690A ICBO max. 1.0 µA IEBO max. 1.0 µA VCEO VCBO VEBO min. 120 min. 120 min. 160 V 160 V 5.0 V VCEsat* VBEsat* max. max. 0.7 1.3 hFE* hFE* min. min. max. 35 60 320 Co typ. 19 fT typ. 155 V V pF MHz * Pulse test: pulse width ≤ 350 µs; duty cycle ≤ 2%. Pulsed. (1) PW ≤ 10 ms, duty cycle ≤ 50%. ** hFE classification: R: 60-120 O: 100-200 Y: 160-320 Continental Device India Limited Data Sheet Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3