ETC CSC2690AO

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
CSC2690, CSC2690A
TO-126 (SOT-32) Plastic Package
CSC2690, 2690A
NPN PLASTIC POWER TRANSISTORS
Complementary CSA1220, 1220A
Audio frequency, High Frequency and Power Amplifier
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 1A; IB = 0.2 A
D.C. current gain
IC = 0.3 A; VCE = 5 V
VCBO
VCEO
IC
Ptot
Tj
2690
max. 120
max. 120
max.
max.
max.
2690A
160 V
160 V
1.2
A
20
W
150
°C
VCEsat
max.
0.7
hFE
min.
max.
60
320
V
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Continental Device India Limited
VCBO
VCEO
Data Sheet
2690
max. 120
max. 120
2690A
160 V
160 V
Page 1 of 3
CSC2690, CSC2690A
Emitter-base voltage (open collector)
Collector current (DC)
Collector current (Pulse) (1)
Base current (DC)
Total power dissipation up to TA = 25°C
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
VEBO
IC
IC
IB
Ptot
Ptot
Tj
T stg
max.
max.
max.
max.
max.
max.
max.
CHARACTERISTICS
T amb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 120V
Emitter cut-off current
IC = 0; VEB = 3V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 1 A; IB = 0.2 A
D.C. current gain
IC = 5 mA; VCE = 5 V
IC = 0.3 A; VCE = 5 V**
Output capacitance at f = 1MHz
IE = 0, VCB = 10V
Transition frequency
IC = 0.2 A; VCE = 5 V
5.0
1.2
2.5
0.3
1.2
20
150
–65 to +150
2690
V
A
A
A
W
W
ºC
ºC
2690A
ICBO
max.
1.0
µA
IEBO
max.
1.0
µA
VCEO
VCBO
VEBO
min. 120
min. 120
min.
160 V
160 V
5.0
V
VCEsat*
VBEsat*
max.
max.
0.7
1.3
hFE*
hFE*
min.
min.
max.
35
60
320
Co
typ.
19
fT
typ.
155
V
V
pF
MHz
* Pulse test: pulse width ≤ 350 µs; duty cycle ≤ 2%. Pulsed.
(1) PW ≤ 10 ms, duty cycle ≤ 50%.
** hFE classification: R: 60-120 O: 100-200 Y: 160-320
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3