Technische Information / Technical Information IGBT-Module IGBT-Modules FD 400 R 65 KF1-K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj=125°C Tvj=25°C Tvj=-40°C VCES 6500 6300 5800 V TC = 80 °C IC,nom. 400 A TC = 25 °C IC 800 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80°C ICRM 800 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 7,4 kW VGES +/- 20V V IF 400 A IFRM 800 A I2t 87 k A2s Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV Teilentladungs Aussetzspannung partial discharge extinction voltage RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287) VISOL 5,1 kV Charakteristische Werte / Characteristic values min. typ. max. - 4,3 4,9 V - 5,3 5,9 V VGE(th) 6,4 7,0 8,1 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 400A, VGE = 15V, Tvj = 25°C VCE sat IC = 400A, VGE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 70mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V ... +15V QG - 5,6 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 56 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 6300V, VGE = 0V, Tvj = 25°C VCE = 6500V, VGE = 0V, Tvj = 125°C ICES - 0,4 40 - mA mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: Dr. Oliver Schilling date of publication: 2002-08-30 approved by: Dr. Schütze 2002-08-30 revision/Status: Series 1 1 FD 400 R65 KF1-K (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FD 400 R 65 KF1-K Charakteristische Werte / Characteristic values min. typ. max. - 0,75 - µs - 0,72 - µs - 0,37 - µs - 0,40 - µs - 5,50 - µs - 6,00 - µs - 0,40 - µs - 0,50 - µs Eon - 4000 - mJ Eoff - 2300 - mJ ISC - 2000 - A - nH mΩ Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 25°C, td,on VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 125°C, Anstiegszeit (induktive Last) rise time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 25°C, tr VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 125°C, Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGoff = 36Ω, CGE=44nF, Tvj = 25°C, td,off VGE = ±15V, RGoff = 36Ω, CGE=44F, Tvj = 125°C, Fallzeit (induktive Last) fall time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGoff = 36Ω, CGE=44nF, Tvj = 25°C, tf VGE = ±15V, RGoff = 36Ω, CGE=44F, Tvj = 125°C, Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 400A, VCE = 3600V, VGE = ±15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 400A, VCE = 3600V, VGE = ±15V Kurzschlußverhalten SC Data tP ≤ 10µsec, VGE ≤ 15V, acc to appl.note 2002/05 Modulinduktivität stray inductance module Zweig 1+2 / arm 1+2 Zweig 3 / arm 3 LsCE - 20 25 Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip Zweig 1+2 / arm 1+2 Zweig 3 / arm 3 RCC´+EE´ - 0,18 0,37 - min. typ. max. 3,0 3,8 4,6 V 3,9 4,7 V - 540 - A - 660 - A - 360 - µC - 700 - µC RGon = 6,2Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH RGoff = 36Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH TVj≤125°C, VCC=4400V, VCEmax=VCES -LσCE ·di/dt Diode / Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 400A, VGE = 0V, Tvj = 25°C VF IF = 400A, VGE = 0V, Tvj = 125°C IF = 400A, - diF/dt = 1400A/µs VR = 3600V, VGE = -10V, Tvj = 25°C IRM VR = 3600V, VGE = -10V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 400A, - diF/dt = 1400A/µs VR = 3600V, VGE = -10V, Tvj = 25°C Qr VR = 3600V, VGE = -10V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 400A, - diF/dt = 1400A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C 2 Erec - 440 - mJ - 1050 - mJ FD 400 R65 KF1-K (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FD 400 R 65 KF1-K Thermische Eigenschaften / Thermal properties Transistor / transistor, DC Innerer Wärmewiderstand thermal resistance, junction to case Diode/Diode, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per Module λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature Schaltvorgänge IGBT(RBSOA);Diode(SOA) switching operation IGBT(RBSOA);Diode(SOA) Lagertemperatur storage temperature min. typ. - - 0,017 K/W - - 0,032 K/W RthCK - 0,006 - K/W Tvj, max - - 150 °C Tvj,op -40 - 125 °C Tstg -40 - 125 °C RthJC max. Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AlN Kriechstrecke creepage distance 56 mm Luftstrecke clearance 26 mm CTI comperative tracking index >600 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube /screw M6 Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M4 Anschlüsse / terminals M8 Gewicht weight M M G 5 Nm 2 Nm 8 - 10 Nm 1400 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 FD 400 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 400 R 65 KF1-K IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 800 25°C 700 125°C IC [A] 600 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE), VGE= < see inset > Tvj = 125°C 800 20V 700 15V 12V IC [A] 600 10V 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 VCE [V] 4 FD 400 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 400 R 65 KF1-K IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 10V 800 700 25°C 125°C IC [A] 600 500 400 300 200 100 0 5 6 7 8 9 10 11 12 13 14 15 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 800 25°C 700 125°C IF [A] 600 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 VF [V] 5 FD 400 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 400 R 65 KF1-K IGBT-Module IGBT-Modules Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) RGon=6,2Ω, RGoff=36Ω, CGE = 44nF, VGE=±15V, VCE = 3600V, Tvj = 125°C, Switching losses (typical) 11000 10000 9000 Eon Eoff E [mJ] 8000 Erec 7000 6000 5000 4000 3000 2000 1000 0 0 100 200 300 400 500 600 700 800 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) IC = 400A , VCE = 3600V , VGE=±15V, CGE=44nF , Tvj = 125°C 8000 7200 Eon Eoff 6400 Erec E [mJ] 5600 4800 4000 3200 2400 1600 800 0 5 10 15 20 25 30 35 40 45 50 55 60 RG [Ω] 6 FD 400 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 400 R 65 KF1-K IGBT-Module IGBT-Modules Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) RG,off = 36Ω, CGE=44nF, VGE=±15V, Tvj= <see inset>, VCC <=4400V 800 700 600 Tvj=125°C IC [A] 500 Tvj=25°C 400 300 200 100 0 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 VCE [V] (at auxiliary terminals) Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) Pmax = 1200kW ; Tvj= 125°C 800,0 700,0 IR [A] 600,0 500,0 400,0 300,0 200,0 100,0 0,0 0 1000 2000 3000 4000 5000 6000 VR [V] (at auxiliary terminals) 7 FD 400 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 400 R 65 KF1-K IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) ZthJC [K / W] 0,1 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [s] i 1 2 3 4 ri [K/kW] : IGBT 7,65 4,25 1,02 4,08 τi [s] : IGBT 0,030 0,10 0,30 1,0 ri [K/kW] : Diode 14,40 8,00 1,92 7,68 τi [s] : Diode 0,030 0,10 0,30 1,0 8 FD 400 R65 KF1-K (final 1).xls Technische Information / Technical Information FD 400 R 65 KF1-K IGBT-Module IGBT-Modules Äußere Abmessungen / extenal dimensions Anschlüsse / Terminals siehe Anschlussschaltbild oben / see cuircuit diagram above 9 FD 400 R65 KF1-K (final 1).xls