ETC HA2-5002/883

HA-5002/883
®
Monolithic, Wideband, High Slew Rate,
High Output Current Buffer
April 2002
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HA-5002/883 is a monolithic, wideband, high slew rate,
high output current, buffer amplifier.
Utilizing the advantages of the Harris Dielectric Isolation technologies, the HA-5002/883 current buffer offers 1300V/µs
slew rate typically and 1000V/µs minimum with 110MHz of
bandwidth. The ±100mA minimum output current capability is
enhanced by a 3Ω output impedance.
• Voltage Gain (RL = 1kΩ) . . . . . . . . . . . . . . . . . 0.98 (Min)
0.995 (Typ)
(RL = 100Ω) . . . . . . . . . . . . . . . . 0.96 (Min)
0.971 (Typ)
The monolithic HA-5002/883 will replace the hybrid LH0002
with corresponding performance increases. These characteristics range from the 3MΩ (typ) input impedance to the
increased output voltage swing. Monolithic design technologies have allowed a more precise buffer to be developed
with more than an order of magnitude smaller gain error. The
voltage gain is 0.98 guaranteed minimum with a 1kΩ load
and 0.96 minimum with a 100Ω load.
• High Input Impedance . . . . . . . . . . . . . . . . . 1.5MΩ (Min)
3MΩ (Typ)
• Low Output Impedance . . . . . . . . . . . . . . . . . . 5Ω (Max)
3Ω (Typ)
• Very High Slew Rate . . . . . . . . . . . . . . . .1000V/µs (Min)
1300V/µs (Typ)
• Wide Small Signal Bandwidth. . . . . . . . . 110MHz (Typ)
The HA-5002/883 will provide many present hybrid users
with a higher degree of reliability and at the same time
increase overall circuit performance.
• High Output Current . . . . . . . . . . . . . . . . . 100mA (Min)
• High Pulsed Output Current . . . . . . . . . . . 400mA (Max)
• Monolithic Dielectric Isolation Construction
Ordering Information
• Replaces Hybrid LH0002
PART
NUMBER
Applications
• Line Driver
• Data Acquisition
• 110MHz Buffer
TEMPERATURE
RANGE
PACKAGE
HA2-5002/883
-55oC to +125oC
8 Pin Can
HA4-5002/883
-55oC to +125oC
20 Lead Ceramic LCC
• High Power Current Booster
• High Power Current Source
• Sample and Holds
• Radar Cable Driver
• Video Products
Pinouts
NC
3
2
1 20 19
NC
V1 +
HA-5002/883
(METAL CAN)
TOP VIEW
NC
OUT
HA-5002/883
(CLCC)
TOP VIEW
IN
8
NC
4
18 NC
V2 -
5
17 V2 +
NC
6
16 NC
NC
7
15 NC
NC
8
14 NC
V1 + 1
V2 + 2
NC
6
5
3
V2 -
NC
OUT
NC
V1 -
IN
NC
V1 -
4
9 10 11 12 13
NC
7
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
1
Spec Number
511017-883
FN3705.1
HA-5002/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 44V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . Equal to Supplies
Peak Output Current (50ms On, 1s Off) . . . . . . . . . . . . . . . . . .±400mA
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <4000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance
θJA
θJC
Ceramic LCC Package . . . . . . . . . . . . . .
80oC/W
30oC/W
Metal Can Package . . . . . . . . . . . . . . . . . 160oC/W 70oC/W
Package Power Dissipation Limit at +75oC for TJ ≤ +175oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW
Package Power Dissipation Derating Factor Above +75oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
ΝΟΤΕΣ:
1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
Operating Conditions
RL ≥ 100Ω
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50Ω, CLOAD ≤ 10pF, VIN = 0V, Unless Otherwise Specified.
LIMITS
PARAMETERS
Input Offset
Voltage
SYMBOL
VIO1
VIO2
Input Bias Current
IB1
IB2
Voltage Gain 1
+AV1
-AV1
Voltage Gain 2
Voltage Gain 3
Voltage Gain 4
CONDITIONS
GROUP A
SUBGROUPS
VSUP = ±15V
MIN
MAX
UNITS
+25 C
-20
20
mV
2, 3
+125oC, -55oC
-30
30
mV
1
+25oC
-20
20
mV
2, 3
+125oC, -55oC
-30
30
mV
VSUP = ±15V, RS = 1kΩ
1
+25 C
-7
7
µA
2, 3
+125oC, -55oC
-10
10
µA
1
+25oC
-7
7
µA
2, 3
+125oC, -55oC
-10
10
µA
1
+25oC
0.98
-
V/V
VSUP = ±12V, RS = 1kΩ
VSUP = ±12V, RL = 1kΩ,
VIN = -10V
o
1
VSUP = ±12V
VSUP = ±12V, RL = 1kΩ,
VIN = 10V
TEMPERATURE
o
o
o
2, 3
+125 C, -55 C
0.98
-
V/V
1
+25oC
0.98
-
V/V
0.98
-
V/V
2, 3
+125oC,
-55oC
+AV2
VSUP = ±12V, RL = 100Ω,
VIN = 10V
1
+25oC
0.96
-
V/V
-AV2
VSUP = ±12V, RL = 100Ω,
VIN = -10V
1
+25oC
0.96
-
V/V
+AV3
VSUP = ±15V, RL = 100Ω,
VIN = 10V
1
+25oC
0.96
-
V/V
-AV3
VSUP = ±15V, RL = 100Ω,
VIN = -10V
1
+25oC
0.96
-
V/V
+AV4
VSUP = ±15V,
RL = 1kΩ,
VIN = +10V
1
+25oC
0.99
-
V/V
2, 3
+125oC, -55oC
0.99
-
V/V
1
+25oC
0.99
-
V/V
2, 3
+125oC, -55oC
0.99
-
V/V
-AV4
VSUP = ±15V,
RL = 1kΩ,
VIN = -10V
Spec Number
2
511017-883
HA-5002/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50Ω, CLOAD ≤ 10pF, VIN = 0V, Unless Otherwise Specified.
LIMITS
PARAMETERS
Output Voltage
Swing
SYMBOL
+VOUT1
-VOUT1
+VOUT2
-VOUT2
+VOUT3
-VOUT3
Output Current
+IOUT1
-IOUT1
+IOUT2
-IOUT2
Power Supply
Rejection Ratio
+PSRR1
-PSRR1
+PSRR2
-PSRR2
CONDITIONS
VSUP = ±15V,
RL = 100Ω,
VIN = +15V
VSUP = ±15V,
RL = 100Ω,
VIN = -15V
VSUP = ±15V,
RL = 1kΩ,
VIN = +15V
VSUP = ±15V,
RL = 1kΩ,
VIN = -15V
VSUP = ±12V,
RL = 1kΩ,
VIN = +12V
VSUP = ±12V,
RL = 1kΩ,
VIN = -12V
VSUP = ±15V,
VOUT = +10V
VSUP = ±15V,
VOUT = -10V
VSUP = ±12V,
VOUT = +10V
VSUP = ±12V,
VOUT = -10V
∆VSUP = ±5V,
V+ = +20V, V- = -15V,
V+ = +10V, V- = -15V
∆VSUP = ±5V,
V+ = +15V, V- = -20V,
V+ = +15V, V- = -10V
∆VSUP = ±5V,
V+ = +17V, V- = -12V,
V+ = +7V, V- = -12V
∆VSUP = ±5V,
V+ = +12V, V- = -17V,
V+ = +12V, V- = -7V
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
10
-
V
2, 3
+125oC, -55oC
10
-
V
1
+25oC
-
-10
V
2, 3
+125oC, -55oC
-
-10
V
1
+25oC
10
-
V
2, 3
+125oC, -55oC
10
-
V
1
+25oC
-
-10
V
2, 3
+125oC, -55oC
-
-10
V
1
+25oC
10
-
V
2, 3
+125oC, -55oC
10
-
V
1
+25oC
-
-10
V
2, 3
+125oC, -55oC
-
-10
V
1
+25oC
100
-
mA
2, 3
+125oC, -55oC
100
-
mA
1
+25oC
-
-100
mA
2, 3
+125oC, -55oC
-
-100
mA
1
+25oC
100
-
mA
2, 3
+125oC, -55oC
100
-
mA
1
+25oC
-
-100
mA
2, 3
+125oC, -55oC
-
-100
mA
1
+25oC
54
-
dB
2, 3
+125oC, -55oC
54
-
dB
1
+25oC
54
-
dB
2, 3
+125oC, -55oC
54
-
dB
1
+25oC
54
-
dB
2, 3
+125oC, -55oC
54
-
dB
1
+25oC
54
-
dB
2, 3
+125oC, -55oC
54
-
dB
Spec Number
3
511017-883
HA-5002/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50Ω, CLOAD ≤ 10pF, VIN = 0V, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
Power Supply
Current
+ICC1
-ICC1
+ICC2
-ICC2
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
10
mA
2, 3
+125oC, -55oC
-
10
mA
1
+25oC
-10
-
mA
2, 3
+125oC, -55oC
-10
-
mA
1
+25oC
-
10
mA
2, 3
+125oC, -55oC
-
10
mA
1
+25oC
-10
-
mA
2, 3
+125oC, -55oC
-10
-
mA
VSUP = ±15V,
VOUT = 0V
VSUP = ±15V,
VOUT = 0V
VSUP = ±12V,
VOUT = 0V
VSUP = ±12V,
VOUT = 0V
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V or ±12V, RLOAD = 1kΩ, CLOAD ≤ 10pF, Unless Otherwise Specified.
LIMITS
PARAMETERS
Input Resistance
Slew Rate
SYMBOL
NOTES
TEMPERATURE
MIN
MAX
UNITS
RIN1
VSUP = ±15V
1
+25oC
1.5
-
MΩ
RIN2
VSUP = ±12V
1
+25oC
1.5
-
MΩ
+SR1
VSUP = ±15V,
VOUT = -5V to +5V
1
+25oC
1000
-
V/µs
+125oC, -55oC
1000
-
V/µs
+25oC
1000
-
V/µs
+125oC, -55oC
1000
-
V/µs
+25oC
1000
-
V/µs
+125oC, -55oC
1000
-
V/µs
+25oC
1000
-
V/µs
+125oC, -55oC
1000
-
V/µs
1, 2
+25oC
-
10
ns
1, 2
+125oC, -55oC
-
10
ns
1, 2
+25oC
-
10
ns
1, 2
+125oC, -55oC
-
10
ns
-SR1
+SR2
-SR2
Rise and Fall Time
CONDITIONS
TR
TF
VSUP = ±15V,
VOUT = +5V to -5V
1
VSUP = ±12V,
VOUT = -5V to +5V
1
VSUP = ±12V,
VOUT = +5V to -5V
1
VSUP = ±15V or ±12V,
VOUT = 0 to +500mV
VSUP = ±15V or ±12V,
VOUT = 0 to -500mV
Spec Number
4
511017-883
HA-5002/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: VSUPPLY = ±15V or ±12V, RLOAD = 1kΩ, CLOAD ≤ 10pF, Unless Otherwise Specified.
LIMITS
PARAMETERS
Overshoot
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
+OS
VSUP = ±12V or ±15V,
VOUT = 0 to +500mV
1
+25oC
-
30
%
+125oC, -55oC
-
30
%
+25oC
-
30
%
+125oC, -55oC
-
30
%
+25oC
-
300
mW
+125oC, -55oC
-
300
mW
+25oC
-
240
mW
+125oC, -55oC
-
240
mW
-OS
Quiescent Power
Consumption
1
VSUP = ±15V,
VIN = 0V,
IOUT = 0mA
1, 3
VSUP = ±12V,
VIN = 0V,
IOUT = 0mA
1, 3
ROUT1
VSUP = ±12V
1
+25oC
-
5
Ω
ROUT2
VSUP = ±12V
1
+25oC
-
5
Ω
PC1
PC2
Output Resistance
VSUP = ±12V or ±15V,
VOUT = 0 to -500mV
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Measured between 10% and 90% points.
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3
Group A Test Requirements
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
5
511017-883
HA-5002/883
Die Characteristics
DIE DIMENSIONS:
81 x 80 x 19 mils ± 1 mils
2050 x 2030 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 20kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride
Thickness: 7kÅ ± 0.7kÅ
WORST CASE CURRENT DENSITY:
0.7 x 105 A/cm2 at 3.6mA
SUBSTRATE POTENTIAL (Powered Up): V1TRANSISTOR COUNT: 27
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5002/883
IN
V1-
V1- (ALT)
V1+ (ALT)
V2+
V2-
V1+
OUT
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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FAX: +852 2730 1433
Spec Number
6
511017-883