PD - 94324 HFB50HI20 Ultrafast, Soft Recovery Diode FRED Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF(AV) = 50A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Parameter VR IF(AV) IFSM PD @ TC = 25°C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, Q TC = 87°C Single Pulse Forward Current, R TC = 25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 200 50 450 167 -55 to +150 V A W °C Note: Q D.C. = 50% rect. wave R 1/2 sine wave, 60 Hz , P.W. = 8.33 ms CASE STYLE (ISOLATED BASE) CATHODE ANODE ANODE TO-259AA www.irf.com 1 10/09/01 HFB50HI20 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR Cathode Anode Breakdown Voltage VF Min. Typ. Max. Units V Test Conditions 200 — — IR = 100µA Forward Voltage — — 1.34 See Fig. 1 S — — 1.28 — — 1.7 IF = 100A, TJ = 25°C T — — 1.69 IF = 100A, TJ = 125°C T IF = 50A, TJ = -55°C T V IF = 50A, TJ = 25°C T See Fig. 2 IR Reverse Leakage Current See Fig. 2 S — — — — 0.07 100 µA µA VR = VR Rated VR = VR Rated, TJ = 125°C CT Junction Capacitance, See Fig. 3 — — 330 pF VR = 200V LS Series Inductance — 8.7 — nH Measured from anode lead to cathode lead, 6 mm ( 0.025 in ) from package Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter t rr trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M/dt1 di(rec)M/dt2 Min. Reverse Recovery Time Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb — — — — — — — — — Typ. Max. Units — 42 69 4.4 8.7 108 314 390 570 35 — — — — — — — — Test Conditions ns ns IF = 0.5A,VR = 30V, dif/dt = 300A/µs TJ = 25°C See Fig. TJ = 125°C 5 IF = 50A TJ = 25°C See Fig. A A TJ = 125°C 6 VR = 160V TJ = 25°C See Fig. nC TJ = 125°C 7 dif/dt = 200A/µs nC TJ = 25°C See Fig. A/µs 8 A/µs TJ = 125°C Thermal - Mechanical Characteristics Parameter RthJC Wt Junction-to-Case Weight Typ. Max. Units — 10.9 0.75 — °C/W g Note: S Pulse Width < 300µs, Duty Cycle < 2% T Pins 2 and 3 externally tied together 2 www.irf.com HFB50HI20 100 100 125°C Reverse Current - I R (µA) 75°C 1 0.1 25°C 0.01 0.001 0 40 80 120 160 200 Reverse Voltage - V R (V) 10 Fig. 2 - Typical Reverse Current Vs. Reverse Voltage 10000 Tj = 125°C Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 100°C 10 Tj = 25°C Tj = -55°C T J = 25°C 1000 1 0.0 0.4 0.8 1.2 1.6 100 2.0 0 Forward Voltage Drop - V F (V) 40 80 120 160 200 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Vs. Instantaneous Forward Current Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 P DM 0.05 t1 0.02 0.01 0.01 0.00001 0.10 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFB50HI20 100 100 VR = 160V IF = 100A TJ = 125°C TJ = 25°C 60 IF = 50A IRRM - ( A ) trr - ( ns ) 80 IF = 25A IF = 50A IF = 100A IF = 25A 10 VR = 160V 40 TJ = 125°C TJ = 25°C 20 1 100 1000 100 1000 dif / dt - ( A / µs ) dif / dt - ( A / µs ) Fig. 5 - Typical Reverse Recovery Vs. dif/dt, 1000 10000 IF = 100A IF = 25A IF = 50A di ( rec )M / dt - ( A / µs ) Qrr - ( nC ) IF = 25A Fig. 6 - Typical Recovery Current Vs. dif/dt, 100 VR = 160V IF = 50A IF = 100A 1000 VR = 160V TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 10 100 100 1000 dif / dt - ( A / µs ) Fig. 7 - Typical Stored Charge Vs. dif/dt 4 100 1000 dif / dt - ( A / µs ) Fig. 8 - Typical di(rec)M/dt Vs. dif/dt www.irf.com HFB50HI20 3 t rr IF R E V E R S E R E C O V E R Y C IR C U IT tb ta 0 Q rr V R = 2 00 V 2 I RRM 4 0.5 I R R M di(rec)M /dt 0.01 Ω 0.75 I R R M L = 70µH 1 D .U .T. D d if/d t A D JU S T G 5 IR F P 2 50 S Fig. 9 - Reverse Recovery Parameter Test Circuit di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Case Outline and Dimensions — TO-259AA PIN AS S IGNMENTS 1 = CATHODE 2 = ANODE 3 = ANODE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/01 www.irf.com 5