T-1 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps SunPower Series HLMP-EL55 HLMP-EL57 HLMP-EH55 HLMP-EH57 HLMP-EG55 HLMP-EG57 Technical Data Features Applications • Well Defined and Smooth Spatial Radiation Patterns • Wide Viewing Angle • Tinted Diffused Lamp • High Luminous Output • Colors: 590/592 nm Amber 615/617 nm Reddish-Orange 626/630 nm Red • High Operating Temperature: TJLED = +130°C • Superior Resistance to Moisture • Traffic Management: Variable Message Signs Traffic Management Signs • Commercial Indoor/Outdoor Advertising: Signs Marquees Passenger Information • Automotive: Exterior and Interior Lights Benefits • Viewing Angles Match Traffic Management Sign Requirements • Colors Meet Automotive Specifications • Superior Performance in Outdoor Environments • Suitable for Autoinsertion onto PC Boards Description These Precision Optical Performance AlInGaP LEDs provide superior light output for excellent readability in sunlight and are extremely reliable. AlInGaP LED technology provides extremely stable light output over long periods of time. Precision Optical Performance lamps utilize the aluminum indium gallium phosphide (AlInGaP) technology. These LED lamps are tinted, diffused, T-1 3/4 packages incorporating second generation optics producing well defined radiation patterns at specific viewing cone angles. There are two families of amber, red, and red-orange lamps; AlInGaP and the higher performance AlInGaP II. The high maximum LED junction temperature limit of +130°C enables high temperature operation in bright sunlight conditions. These lamps are available in two package options to give the designer flexibility with device mounting. 2 Part Numbering System HLMP - x x xx - x x x xx Mechanical Options 00: Bulk Packaging DD: Ammo Pack Color Bin Selections 0: No color bin limitation 4: Amber color bin 4 only K: Amber color bins 2 and 4 only Maximum Intensity Bin Minimum Intensity Bin Viewing Angle & Lead Stand Offs 55: 55 deg without lead stand offs; AlInGaP 57: 55 deg without lead stand offs; AlInGaP II Color D: 630 nm Red G: 626 nm Red H: 615/617 nm Red-Orange L: 590/592 Amber Package E: 5 mm Round Device Selection Guide (AlInGaP) Typical Viewing Angle 2θ 1/ 2 (Deg.)[4] Color and Dominant Wavelength (nm), Typ.[3] Lamps Without Standoffs on Leads (Outline Drawing A) 55° Amber 590 HLMP-EL55-GK000 120 460 Red-Orange 615 HLMP-EH55-GK000 120 460 Red 626 HLMP-EG55-GK000 120 460 Luminous Intensity Iv (mcd) [1,2] @20 mA Min. Max. Device Selection Guide (AlInGaP II) Typical Viewing Angle 2θ 1/ 2 (Deg.)[4] Color and Dominant Wavelength (nm), Typ.[3] Lamps Without Standoffs on Leads (Outline Drawing A) 55° Amber 592 HLMP-EL57-LP000 345 1330 Red-Orange 617 HLMP-EH57-LP000 345 1330 Red 630 HLMP-ED57-LP000 345 1330 Luminous Intensity Iv (mcd) [1,2] @20 mA Min. Max. Notes: 1. The luminous intensity is measured on the mechanical axis of the lamp package. 2. The optical axis is closely aligned with the package mechanical axis. 3. The dominant wavelength, λd, is derived from the CIE Chromaticity Diagram and represents the color of the lamp. 4. θ 1/2 is the off-axis angle where the luminous intensity is one half the on-axis intensity. 3 Package Dimensions 5.00 ± 0.20 (0.197 ± 0.008) 8.71 ± 0.20 (0.343 ± 0.008 1.14 ± 0.20 (0.045 ± 0.008) 2.35 (0.093) MAX. 31.60 (1.244) MIN. 0.70 (0.028) MAX. CATHODE LEAD 1.00 MIN. (0.039) CATHODE FLAT 0.50 ± 0.10 SQ. TYP. (0.020 ± 0.004) 5.80 ± 0.20 (0.228 ± 0.008) 2.54 ± 0.38 (0.100 ± 0.015) NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS (INCHES). 2. LEADS ARE MILD STEEL, SOLDER DIPPED. 3. TAPERS SHOWN AT TOP OF LEADS (BOTTOM OF LAMP PACKAGE) INDICATE AN EPOXY MENISCUS THAT MAY EXTEND ABOUT 1 mm (0.040 in.) DOWN THE LEADS. 4. RECOMMENDED PC BOARD HOLE DIAMETERS: LAMP PACKAGE WITHOUT STAND-OFFS: FLUSH MOUNTING AT BASE OF LAMP PACKAGE = 1.143/1.067 (0.044/0.042). 4 Absolute Maximum Ratings at TA = 25°C DC Forward Current[1,2,3] ............................................................ 50 mA Peak Pulsed Forward Current[2,3] .............................................. 100 mA Average Forward Current[3] ......................................................... 30 mA Reverse Voltage (I R = 100 µA) ......................................................... 5 V LED Junction Temperature .......................................................... 130°C Operating Temperature .............................................. –40°C to +100°C Storage Temperature .................................................. –40°C to +120°C Dip/Drag Solder Temperature ................................ 260°C for 5 seconds Through-the-Wave Solder Temperature ................. 245°C for 3 seconds [1.59 mm (0.060 in.) below seating plane] Notes: 1. Derate linearly as shown in Figure 4. 2. For long term performance with minimal light output degradation, drive currents between 10 mA and 30 mA are recommended. For more information on recommended drive conditions, please refer to Application Brief I-024 (5966-3087E). 3. Please contact your Agilent Technologies sales representative about operating currents below 10 mA. Electrical/Optical Characteristics at TA = 25 °C Parameter Forward Voltage Amber (λd = 590 nm) Amber (λd = 592 nm) Red-Orange (λd = 615 nm) Red-Orange (λd = 617 nm) Red (λd = 626 nm) Red (λd = 630 nm) Reverse Voltage Peak Wavelength Amber (λd = 590 nm) Amber (λd = 592 nm) Red-Orange (λd = 615 nm) Red-Orange (λd = 617 nm) Red (λd = 626 nm) Red (λd = 630 nm) Spectral Halfwidth Units V Test Conditions IF = 20 mA V nm ∆λ1/2 592 594 621 623 635 639 17 IR = 100 µA Peak of Wavelength of Spectral Distribution at IF = 20 mA nm Speed of Response τs 20 ns Capacitance Thermal Resistance C RθJ-PIN 40 240 pF °C/W Wavelength Width at Spectral Distribution 1/2 Power Point at IF = 20 mA Exponential Time Constant, e-t/τs VF = 0, f = 1 MHz LED Junction-to-Cathode Lead Emitted Luminous Power/Emitted Radiant Power Luminous Efficacy[1] Amber (λd = 590 nm) Amber (λd = 592 nm) Red-Orange (λd = 615 nm) Red-Orange (λd = 617 nm) Red (λd = 626 nm) Red (λd = 630 nm) Symbol VF VR Min. Typ. Max. 2.4 2.4 2.4 2.4 2.4 2.4 5 2.02 2.15 1.94 2.08 1.90 2.00 20 λPEAK ηv lm/W 480 500 260 235 150 155 Note: 1. The radiant intensity, Ie, in watts per steradian, may be found from the equation I e = Iv/ηv, where I v is the luminous intensity in candelas and ηv is the luminous efficacy in lumens/watt. 5 1.0 RED-ORANGE RELATIVE INTENSITY AMBER RED 0.5 0 500 550 600 650 700 WAVELENGTH – nm Figure 1. Relative Intensity vs. Peak Wavelength. RELATIVE LUMINOUS INTENSITY (NORMALIZED AT 20 mA) 90 CURRENT – mA 80 70 60 RED 50 40 AMBER 30 20 10 0 1.0 1.5 2.0 2.5 2.5 2.0 1.5 1.0 0.5 0 3.0 0 20 40 60 RELATIVE INTENSITY – % 70 60 50 40 30 20 10 -40 -20 0 30 RθJA = 780° C/W 20 10 0 0 20 40 60 80 100 Figure 4. Maximum Forward Current vs. Ambient Temperature. Derating Based on T JMAX = 130 °C. 90 -60 RθJA = 585° C/W Figure 3. Relative Luminous Intensity vs. Forward Current. 80 -80 40 TA – AMBIENT TEMPERATURE – °C 100 0 -100 50 IF – DC FORWARD CURRENT – mA VF – FORWARD VOLTAGE – V Figure 2. Forward Current vs. Forward Voltage. IF – FORWARD CURRENT – mA 3.0 100 20 40 60 80 100 θ – ANGULAR DISPLACEMENT – DEGREES Figure 5. Representative Spatial Radiation Pattern for 55 ° Viewing Angle Lamps. 6 Intensity Bin Limits (mcd at 20 mA) Amber Color Bin Limits (nm at 20 mA) Bin Name Min. Max. Bin Name Min. Max. G 140 180 1 584.5 587.0 H 180 240 2 587.0 589.5 J 240 310 4 589.5 592.0 K 310 400 6 592.0 594.5 L 400 520 M 520 680 N 680 880 P 880 1150 Tolerance for each bin limit is ± 15%. Tolerance for each bin limit is ± 0.5 nm. Note: 1. Bin categories are established for classification of products. Products may not be available in all bin categories. www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies Inc. August 17, 2001 Obsoletes 5980-1855E 5988-3460EN