VISHAY 50N02-09

SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (W)
ID (A)a
0.0095 @ VGS = 10 V
20
0.017 @ VGS = 4.5 V
15
APPLICATIONS
VDS (V)
20
D
TO-252
Drain Connected to Tab
G
D
TrenchFETr Power MOSFET
175_C Junction Temperature
PWM Optimized for High Efficiency
100% Rg Tested
D
D
D
D
D High-Side Synchronous Buck DC/DC
Conversion
− Desktop
− Server
G
S
Top View
S
Ordering Information: SUD50N02-09P
SUD50N02-09P—E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"20
TA = 25_C
Continuous Drain Currenta
TC= 100_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
L = 0.1
0 1 mH
Single Pulse Avalanche Energy
TA = 25_C
Maximum Power Dissipation
TC = 25_C
Operating Junction and Storage Temperature Range
Unit
V
20
ID
14
IDM
100
IS
4.3
IAS
29
EAS
A
42
mJ
6.5a
PD
W
39.5
TJ, Tstg
−55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction
Junction-to-Ambient
to Ambienta
Maximum Junction-to-Case
Symbol
t v 10 sec
Steady State
RthJA
RthJC
Typical
Maximum
19
23
40
50
3.1
3.8
Unit
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
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1
SUD50N02-09P
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
Unit
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
VGS(th)
VDS = VGS, ID = 250 mA
0.8
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 125_C
50
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
0.0095
0.014
VGS = 4.5 V, ID = 20 A
Forward Transconductanceb
gfs
mA
A
0.008
VGS = 10 V, ID = 20 A, TJ = 125_C
rDS(on)
nA
50
VGS = 10 V, ID = 20 A
Drain-Source
Drain
Source On
On-State
State Resistanceb
V
3.0
0.0135
VDS = 15 V, ID = 20 A
W
0.017
15
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
1300
VGS = 0 V, VDS = 10 V, f = 1 MHz
470
10.5
1.6
tr
Turn-Off Delay Timec
VDD = 10 V, RL = 0.2 W
ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W
td(off)
Fall Timec
nC
4.0
td(on)
Rise Timec
16
4.2
VDS = 10 V, VGS = 4.5 V, ID = 50 A
Rg
Turn-On Delay Timec
pF
p
275
tf
4.0
6
8
12
10
15
25
40
12
20
W
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
IF = 50 A, VGS = 0 V
1.2
1.5
V
trr
IF = 50 A, di/dt = 100 A/ms
35
70
ns
Source-Drain Reverse Recovery Time
100
A
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
VGS = 10 thru 6 V
80
I D − Drain Current (A)
I D − Drain Current (A)
TC = −55_C
5V
80
60
4V
40
20
25_C
60
125_C
40
20
3V
0
0
0
2
4
6
8
VDS − Drain-to-Source Voltage (V)
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2
10
0
1
2
3
4
5
6
VGS − Gate-to-Source Voltage (V)
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
SUD50N02-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
60
0.030
g fs − Transconductance (S)
50
r DS(on)− On-Resistance ( W )
TC = −55_C
25_C
40
125_C
30
20
10
0
0.025
VGS = 4.5 V
0.020
0.015
VGS = 10 V
0.010
0.005
0.000
0
10
20
30
40
50
0
20
40
ID − Drain Current (A)
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
100
16
20
Gate Charge
10
1600
Ciss
1200
800
Coss
400
Crss
0
VDS = 10 V
ID = 50 A
8
6
4
2
0
0
4
8
12
16
20
0
4
VDS − Drain-to-Source Voltage (V)
1.6
8
12
Qg − Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
100
VGS = 10 V
ID = 30 A
I S − Source Current (A)
1.8
rDS(on) − On-Resiistance
(Normalized)
80
ID − Drain Current (A)
Capacitance
2000
60
1.4
1.2
1.0
TJ = 150_C
TJ = 25_C
10
0.8
0.6
−50
−25
0
25
50
75
100
125
TJ − Junction Temperature (_C)
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
150
175
1
0
0.3
0.6
0.9
1.2
1.5
VSD − Source-to-Drain Voltage (V)
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SUD50N02-09P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Limited
by rDS(on)
20
10, 100 ms
100
I D − Drain Current (A)
I D − Drain Current (A)
Safe Operating Area
1000
25
15
10
5
1 ms
10
10 ms
TA = 25_C
Single Pulse
0.1
0
0
25
50
75
100
125
150
100 ms
1s
10 s
100 s
dc
1
0.01
175
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
TA − Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
100
1000
Square Wave Pulse Duration (sec)
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Document Number: 72034
S-41168—Rev. C, 14-Jun-04