ETC HVM121WK

ADE-208-042C(Z)
HVM121WK
Silicon Epitaxial Planar PIN Diode
for High Frequency Attenuator
Preliminary
Rev. 3
Jun. 1993
Features
Pin Arrangement
• Low capacitance. (C= 0.7pF max)
• MPAK package is suitable for high density
surface mounting and high speed assembly.
3
1
2
(Top View)
Ordering Information
Type No.
Laser Mark
Package Code
HVM121WK
H4
MPAK
1 Anode
2 Anode
3 Cathode
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
100
V
Forward current
IF
50
mA
Power dissipation
Pd *
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55 to +125
°C
* Per one device
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Forward voltage
VF
Reverse current
Capacitance
Forward resistance
Typ
Max
Unit
Test Condition
—
—
1.1
V
IF = 50 mA
IR
—
—
100
nA
VR = 30 V
C
rf1
rf2
—
1.0
—
—
0.7
—
pF
kΩ
VR = 50 V, f = 1 MHz
IF = 10 µA, f = 100 MHz
—
—
10
Ω
IF = 10 mA, f = 100 MHz
HVM121WK
10 -6
-4
10 -7
Reverse current I R (A)
Forward current I F (A)
10
10-6
10
-8
10-8
-9
10
10-10
10 -11
-10
10
10 -12
-12
10
0
0.2
0.4
0.6
0.8
10 -13
0
1.0
40
20
Forward voltage VF (V)
60
80
100
Reverse voltage VR (V)
Fig.1 Forward current Vs.
Forward voltage
Fig.2 Reverse current Vs.
Reverse voltage
4
10
f=1MHz
f=100MHz
Forward resistance r f (Ω )
Capacitance C (pF)
10
1.0
-1
10
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs.
Reverse voltage
10
2
3
10
2
10
10
1.0
-5
10
-4
10
-3
10
Forward current I F (A)
Fig.4 Forward resistance
Vs. Forward current
-2
10
HVM121WK
Package Dimensions
0.65 – 0.3
+ 0.10
0.4 – 0.05
Laser Mark
+ 0.1
Unit: mm
+ 0.10
0.16 – 0.06
0.3
2.8 +– 0.1
+ 0.2
– 0.6
2.8
2 Anode
3 Cathode
+ 0.2
1.9
1 Anode
1.1 – 0.1
1
0.95
0.1
0.65 +– 0.3
2
0.95
0 – 0.10
0.3
H 4
1.5
3
HITACHI Code MPAK(1)
JEDEC Code
—
EIAJ Code
SC-59A
Weight (g)
0.011