16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656TU6 Series DESCRIPTION The Hyundai HYM72V16M656TU6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB. The Hyundai HYM72V16M656TU6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes memory. The Hyundai HYM72V16M656TU6 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. FEATURES • PC100MHz support • SDRAM internal banks : four banks • 144pin SDRAM Micro SO DIMM • Module bank : one physical bank • Serial Presence Detect with EEPROM • Auto refresh and self refresh • 1.18” (30.00mm) Height PCB with double sided components • 8192 refresh cycles / 64ms • Programmable Burst Length and Burst Type • Single 3.3±0.3V power supply • All device pins are compatible with LVTTL interface • Data mask function by DQM - 1, 2, 4 or 8 or Full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst • Programmable CAS Latency ; 2, 3 Clocks ORDERING INFORMATION Part No. Clock Frequency HYM72V16M656TU6-8 125MHz HYM72V16M656TU6-S 100MHz Internal Bank Ref. Power SDRAM Package Plating 4 Banks 4K Normal TSOP-II Gold This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.0/Dec.2000 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series PIN DESCRIPTION PIN PIN NAME DESCRIPTION CK0, CK1 Clock Inputs The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK CKE0 Clock Enable Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh /S0 Chip Select Enables or disables all inputs except CK, CKE and DQM BA0, BA1 SDRAM Bank Address Selects bank to be activated during /RAS activity Selects bank to be read/written during /CAS activity A0 ~ A12 Address Row Address : RA0 ~ RA12, Column Address : CA0 ~ CA8 Auto-precharge flag : A10 /RAS, /CAS, /WE Row Address Strobe, Column Address Strobe, Write Enable /RAS, /CAS and /WE define the operation Refer function truth table for details DQM0~DQM7 Data Input/Output Mask Controls output buffers in read mode and masks input data in write mode DQ0 ~ DQ63 Data Input/Output Multiplexed data input / output pin VCC Power Supply (3.3V) Power supply for internal circuits and input buffers VSS Ground Ground SCL SPD Clock Input Serial Presence Detect Clock input SDA SPD Data Input/Output Serial Presence Detect Data input/output NC No Connection No connection Rev. 0.0/Dec.2000 2 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series PIN ASSIGNMENTS FRONT SIDE BACK SIDE PIN NO. NAME PIN NO. 1 VSS 3 DQ0 5 7 FRONT SIDE BACK SIDE NAME PIN NO. NAME PIN NO. 2 VSS 71 NC 72 NC 4 DQ32 73 NC 74 *CK1 DQ1 6 DQ33 75 VSS 76 VSS DQ2 8 DQ34 77 NC 78 NC 9 DQ3 10 DQ35 79 NC 80 NC 11 VCC 12 VCC 81 VCC 82 VCC 13 DQ4 14 DQ36 83 DQ16 84 DQ48 15 DQ5 16 DQ37 85 DQ17 86 DQ49 17 DQ6 18 DQ38 87 DQ18 88 DQ50 19 DQ7 20 DQ39 89 DQ19 90 DQ51 21 VSS 22 VSS 91 VSS 92 VSS 23 DQM0 24 DQM4 93 DQ20 94 DQ52 25 DQM1 26 DQM5 95 DQ21 96 DQ53 27 VCC 28 VCC 97 DQ22 98 DQ54 29 A0 30 A3 99 DQ23 100 DQ55 31 A1 32 A4 101 VCC 102 VCC 33 A2 34 A5 103 A6 104 A7 35 VSS 36 VSS 105 A8 106 BA0 37 DQ8 38 DQ40 107 VSS 108 VSS 39 DQ9 40 DQ41 109 A9 110 BA1 41 DQ10 42 DQ42 111 A10/AP 112 A11 43 DQ11 44 DQ43 113 VCC 114 VCC 45 VCC 46 VCC 115 DQM2 116 DQM6 47 DQ12 48 DQ44 117 DQM3 118 DQM7 49 DQ13 50 DQ45 119 VSS 120 VSS 51 DQ14 52 DQ46 121 DQ24 122 DQ56 53 DQ15 54 DQ47 123 DQ25 124 DQ57 55 VSS 56 VSS 125 DQ26 126 DQ58 57 NC 58 NC 127 DQ27 128 DQ59 59 NC 60 NC 129 VCC 130 VCC 131 DQ28 132 DQ60 DQ61 Voltage Key NAME 133 DQ29 134 61 CK0 62 CKE0 135 DQ30 136 DQ62 63 VCC 64 VCC 137 DQ31 138 DQ63 65 /RAS 66 /CAS 139 VSS 140 VSS 67 /WE 68 NC 141 SDA 142 SCL 69 /S0 70 NC 143 VCC 144 VCC Note : * CK1 are connected with termination R/C (Refer to the Block Diagram) Rev. 0.0/Dec.2000 3 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series BLOCK DIAGRAM Note : 1. The serial resistor values of DQs are 10ohms 2. The padding capacitance of termination R/C for CK1 is 10pF Rev. 0.0/Dec.2000 4 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series SERIAL PRESENCE DETECT BYTE NUMBER FUNCTION DESCRIPTION FUNCTION VALUE -8 -S -8 -S BYTE0 # of Bytes Written into Serial Memory at Module Manufacturer 128 Bytes 80h BYTE1 Total # of Bytes of SPD Memory Device 256 Bytes 08h BYTE2 Fundamental Memory Type BYTE3 SDRAM 04h # of Row Addresses on This Assembly 13 0Dh BYTE4 # of Column Addresses on This Assembly 9 09h BYTE5 # of Module Banks on This Assembly 1 Bank 01h BYTE6 Data Width of This Assembly 64 Bits 40h BYTE7 Data Width of This Assembly (Continued) - 00h BYTE8 Voltage Interface Standard of This Assembly BYTE9 SDRAM Cycle Time @/CAS Latency=3 8ns 10ns 80h BYTE10 Access Time from Clock @/CAS Latency=3 6ns 6ns 60h BYTE11 DIMM Configuration Type BYTE12 Refresh Rate/Type BYTE13 Primary SDRAM Width BYTE14 Error Checking SDRAM Width BYTE15 Minimum Clock Delay Back to Back Random Column Address BYTE16 Burst Lenth Supported BYTE17 # of Banks on Each SDRAM Device BYTE18 SDRAM Device Attributes, /CAS Lataency BYTE19 LVTTL 1 01h A0h 60h None 00h 7.8125us / Self Refresh Supported 82h x16 10h None 00h tCCD = 1 CLK 01h 1,2,4,8,Full Page 8Fh 4 Banks 04h /CAS Latency=2,3 06h SDRAM Device Attributes, /CS Lataency /CS Latency=0 01h BYTE20 SDRAM Device Attributes, /WE Lataency /WE Latency=0 01h BYTE21 SDRAM Module Attributes Neither Buffered nor Registered 00h SDRAM Device Attributes, General +/- 10% voltage tolerence, Burst Read Single Bit Write, Precharge All, Auto Precharge, Early RAS Precharge 0Eh BYTE22 2 BYTE23 SDRAM Cycle Time @/CAS Latency=2 - - 00h 00h BYTE24 Access Time from Clock @/CAS Latency=2 - - 00h 00h BYTE25 SDRAM Cycle Time @/CAS Latency=1 - - 00h 00h BYTE26 Access Time from Clock @/CAS Latency=1 - - 00h 00h BYTE27 Minimum Row Precharge Time (tRP) 20ns 20ns 14h 14h BYTE28 Minimum Row Active to Row Active Delay (tRRD) 16ns 20ns 10h 14h BYTE29 Minimum /RAS to /CAS Delay (tRCD) 20ns 20ns 14h 14h BYTE30 Minimum /RAS Pulse Width (tRAS) 48ns 50ns 30h BYTE31 Module Bank Density BYTE32 Command and Address Signal Input Setup Time 2ns 2ns 20h 20h BYTE33 Command and Address Signal Input Hold Time 1ns 1ns 10h 10h BYTE34 Data Signal Input Setup Time 2ns 2ns 20h 20h BYTE35 Data Signal Input Hold Time 1ns 1ns 10h 10h BYTE36 ~61 Superset Information (may be used in future) BYTE62 SPD Revision BYTE63 Checksum for Byte 0~62 BYTE64 Manufacturer JEDEC ID Code BYTE65 ~71 ....Manufacturer JEDEC ID Code BYTE72 Manufacturing Location Rev. 0.0/Dec.2000 NOTE 128MB 32h 20h - 00h Intel SPD 1.2B - 12h FAh 3, 8 20h Hyundai JEDED ID ADh Unused FFh HEI(Korea Area) HEA (United States Area) HEU (Europe Area) HEJ (Japan Area) Asia Area 0*h 1*h 2*h 3*h 4*h 9 5 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series Continued BYTE NUMBER FUNCTION DESCRIPTION BYTE73 Manufacturer’s Part Number (Component) BYTE74 Manufacturer’s Part Number (128Mb based) BYTE75 Manufacturer’s Part Number (Voltage Interface) BYTE76 Manufacturer’s Part Number (Memory Width) BYTE77 ....Manufacturer’s Part Number (Memory Width) BYTE78 Manufacturer’s Part Number (Module Type) BYTE79 BYTE80 BYTE81 Manufacturer’s Part Number (Refresh, SDRAM Bank) BYTE82 Manufacturer’s Part Number (Package Type) BYTE83 Manufacturer’s Part Number (Module Type) BYTE84 Manufacturer’s Part Number (Component Configuration) BYTE85 Manufacturer’s Part Number (Hyphent) -8 VALUE -S -8 NOTE -S 7 (SDRAM) 37h 4, 5 2 31h 4, 5 V (3.3V, LVTTL) 56h 4, 5 1 31h 4, 5 6 36h 4, 5 M (SO DIMM) 4Dh 4, 5 Manufacturer’s Part Number (Data Width) 6 36h 4, 5 ....Manufacturer’s Part Number (Data Width) 5 35h 4, 5 6 (8K Refresh, 4Banks) 36h 4, 5 T 54h 4, 5 U(Micro based) 55h 4, 5 6 (x16 based) 36h 4, 5 - (Hyphen) 2Dh 4, 5 BYTE86 Manufacturer’s Part Number (Min. Cycle Time) BYTE88 ~90 Manufacturer’s Part Number BYTE91 BYTE92 BYTE93 Manufacturing Date BYTE94 ....Manufacturing Date BYTE95 ~98 BYTE99 ~125 FUNCTION 8 S 38h 53h 4, 5 Blanks 20h 4, 5 Revision Code (for Component) Process Code - 4, 6 ....Revision Code (for PCB) Process Code - 4, 6 Work Week - 3, 6 Year - 3, 6 Serial Number - 6 None 00h Assembly Serial Number Manufacturer Specific Data (may be used in future) BYTE126 System Frequency Support BYTE127 Intel Specification Details for 100MHz Support BYTE128 ~256 Unused Storage Locations 100MHz Refer to Note7 - 64h 8Fh 7, 8 8Dh 7, 8 00h Note : 1. The bank address is excluded 2. 1, 2, 4, 8 for Interleave Burst Type 3. BCD adopted 4. ASCII adopted 5. Basically HYUNDAI writes Part No. except for H ‘ YM’in Byte 73~90 to use the limited 18 bytes from byte 73 to byte 90 6. Not fixed but dependent 7. CK0 connected to DIMM, TBD junction temp, CL2(3) support, Intel defined Concurrent Auto Precharge support 8. Refer to Intel SPD Specification 1.2B 9. Refer to HEI Web site Rev. 0.0/Dec.2000 6 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 °C Storage Temperature TSTG -55 ~ 125 °C Voltage on Any Pin relative to V SS VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD relative to VSS VDD, VDDQ -1.0 ~ 4.6 V Short Circuit Output Current IOS 50 mA Power Dissipation PD 4 W Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 °C ⋅ Sec Note : Operation at above absolute maximum rating can adversely affect device reliability. DC OPERATING CONDITION (TA=0 to 70°C) Parameter Symbol Min Typ Max Unit Note Power Supply Voltage VDD, VDDQ 3.0 3.3 3.6 V 1 Input High voltage VIH 2.0 3.0 VDDQ + 0.3 V 1,2 Input Low voltage VIL -0.3 0 0.8 V 1,3 Note Note : 1.All voltages are referenced to VSS = 0V 2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration. 3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration. AC OPERATING TEST CONDITION (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V) Parameter Symbol Value Unit AC Input High / Low Level Voltage VIH / VIL 2.4/0.4 V Vtrip 1.4 V Input Rise / Fall Time tR / tF 1 ns Output Timing Measurement Reference Level Voltage Voutref 1.4 V CL 50 pF Input Timing Measurement Reference Level Voltage Output Load Capacitance for Access Time Measurement 1 Note : 1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output load circuit Rev. 0.0/Dec.2000 7 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series CAPACITANCE (TA=25°C, f=1MHz) -8/S Parameter Pin Input Capacitance Data Input / Output Capacitance Symbol Unit Min Max CK0 CI1 20 40 pF CKE0 CI2 15 35 pF /S0 CI3 15 35 pF A0~12, BA0, BA1 CI4 15 35 pF /RAS, /CAS, /WE CI5 15 30 pF DQM0~DQM7 CI 6 5 15 pF DQ0 ~ DQ63 CI/O 5 15 pF OUTPUT LOAD CIRCUIT Vtt=1.4V RT=250 Ω Output Output 50pF DC Output Load Circuit Rev. 0.0/Dec.2000 50pF AC Output Load Circuit 8 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V) Parameter Symbol Min. Max Unit Note Input Leakage Current ILI -4 4 uA 1 Output Leakage Current ILO -1 1 uA 2 Output High Voltage VOH 2.4 - V IOH = -2mA Output Low Voltage VOL - 0.4 V IOL = +2mA Note : 1.VIN = 0 to 3.6V, All other pins are not tested under V IN =0V 2.DOUT is disabled, VOUT=0 to 3.6 DC CHARACTERISTICS II Speed Parameter Operating Current Symbol IDD1 Test Condition Burst length=1, One bank active tRC ≥ tRC(min), IOL=0mA -8 -S 480 480 CKE ≤ VIL(max), tCK = 15ns 8 CKE ≤ VIL(max), tCK = ∞ 4 IDD2N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V 80 IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 60 IDD3P CKE ≤ VIL(max), tCK = 15ns 20 IDD3PS CKE ≤ VIL(max), tCK = ∞ 20 IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V 120 IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 80 Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active Auto Refresh Current IDD5 tRRC ≥ tRRC(min), All banks active Self Refresh Current IDD6 CKE ≤ 0.2V Precharge Standby Current IDD2P in Power Down Mode IDD2PS Precharge Standby Current in Non Power Down Mode Active Standby Current in Power Down Mode Active Standby Current in Non Power Down Mode Unit Note mA 1 mA mA mA mA CL=3 520 440 CL=2 560 480 mA 1 960 mA 2 16 mA 3 8 mA 4 Note : 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3.HYM72V16M656TU6-8/P/S 4. HYM72V16M656LTU6-8/P/S Rev. 0.0/Dec.2000 9 PC100 SDRAM SO DIMM HYM72V16M656TU6 AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) -8 Parameter System Clock Cycle Time CAS Latency = 3 -S Symbol Unit Min tCK3 Max 8 Min Note Max 10 1000 CAS Latency = 2 ns 1000 tCK2 10 Clock High Pulse Width tCHW 3 - 3 - ns 1 Clock Low Pulse Width tCLW 3 - 3 - ns 1 CAS Latency = 3 tAC3 - 6 - 6 ns CAS Latency = 2 tAC2 - 6 - 6 ns Data-Out Hold Time tOH 3 - 3 - ns Data-Input Setup Time tDS 2 - 2 - ns 1 Data-Input Hold Time tDH 1 - 1 - ns 1 Address Setup Time tAS 2 - 2 - ns 1 Address Hold Time tAH 1 - 1 - ns 1 CKE Setup Time tCKS 2 - 2 - ns 1 CKE Hold Time tCKH 1 - 1 - ns 1 Command Setup Time tCS 2 - 2 - ns 1 Command Hold Time tCH 1 - 1 - ns 1 CLK to Data Output in Low-Z Time tOLZ 1 - 1 - ns CAS Latency = 3 tOHZ3 3 6 3 6 ns CAS Latency = 2 tOHZ2 3 6 3 6 ns Access Time From Clock CLK to Data Output in High-Z Time Series 12 ns 2 Note : 1.Assume tR / tF (input rise and fall time ) is 1ns If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter 2.Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter Rev. 0.0/Dec.2000 10 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series AC CHARACTERISTICS II -8 Parameter -S Symbol Unit Min Max Min Max Operation tRC 68 - 70 - ns Auto Refresh tRRC 68 - 70 - ns RAS to CAS Delay tRCD 20 - 20 - ns RAS Active Time tRAS 48 100K 50 100K ns RAS Precharge Time tRP 20 - 20 - ns RAS to RAS Bank Active Delay tRRD 16 - 20 - ns CAS to CAS Delay tCCD 1 - 1 - CLK Write Command to Data-In Delay tWTL 0 - 0 - CLK Data-In to Precharge Command tDPL 2 - 2 - CLK Data-In to Active Command tDAL 5 - 4 - CLK DQM to Data-Out Hi-Z tDQZ 2 - 2 - CLK DQM to Data-In Mask tDQM 0 - 0 - CLK MRS to New Command tMRD 2 - 2 - CLK CAS Latency = 3 tPROZ3 3 - 3 - CLK CAS Latency = 2 tPROZ2 2 - 2 - CLK Power Down Exit Time tPDE 1 - 1 - CLK Self Refresh Exit Time tSRE 1 - 1 - CLK Refresh Time tREF - 64 - 64 ms Note RAS Cycle Time Precharge to Data Output Hi-Z 1 Note : 1. A new command can be given tRRC after self refresh exit Rev. 0.0/Dec.2000 11 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series DEVICE OPERATING OPTION TABLE HYM72V16M656(L)TU6-8 CAS Latency tRCD tRAS tRC tRP tAC tOH 125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns 100MHz(10ns) 3CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 83MHz(12ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns HYM72V16M656(L)TU6-S CAS Latency tRCD tRAS tRC tRP tAC tOH 100MHz(10ns) 3CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 83MHz(12ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 66MHz(15ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns Rev. 0.0/Dec.2000 12 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series COMMAND TRUTH TABLE Command A10/ AP CKEn-1 CKEn CS RAS CAS WE DQM Mode Register Set H X L L L L X OP code H X X X No Operation H X X X L H H H Bank Active H X L L H H X H X L H L H X ADDR RA Read Note V L CA Read with Autoprecharge V H Write L H X L H L L X CA Write with Autoprecharge H X L L H L X Precharge selected Bank Burst Stop H DQM H Auto Refresh H H L L L Entry H L L L X H X Exit L H H L H H L X L V X V X H X X L H X X X X X L H H H H X X X L H H H H X X X L H H H H X X X L V V V L Precharge power down H X X X Self Refresh1 Entry V H Precharge All Banks X X Exit Clock Suspend BA Entry Exit L H L H X L H X X X X Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high 2. X = Don′t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address, Opcode = Operand Code, NOP = No Operation Rev. 0.0/Dec.2000 13 PC100 SDRAM SO DIMM HYM72V16M656TU6 Series PACKAGE DEMENSION ¡¾0.08 Rev. 0.0/Dec.2000 14