IL350/351/358/359 High Performance Linear Optocoupler for Optical DAA in Telecommunications FEATURES • 2.0 mm High SMT Package • High Sensitivity (K1) at Low Operating LED Current • Couples AC and DC Signals • Low Input-Output Capacitance • Isolation Voltage, 3000 VRMS • Low Distortion Dimensions in Inches (mm) .336 (8.4) ±.010 (±.25) .225 (5.6) .215 (5.4) Pin One ID A 2 7 A K 3 6 N.C A 4 5 N.C .015 (.375) ±.002 (±.050) .042 (1.05) Ref. DESCRIPTION The IL350/1/8/9 optocouplers can be used with the aid of operational amplifiers in closed loop conditions to achieve highly linear and electrically isolated AC and or DC signal amplifiers. 8 K .230 (5.75) .220 (5.5) APPLICATIONS • Optical DAA for V.34 FAX/Modem PCMCIA Cards • Digital Telephone Line Isolation The IL350/1/8/9 family of Linear Optocoupler consist of an IRLED optically coupled to two photodiodes. The emitter mechanically faces both diodes enabling them to receive approximately an equal amount of infrared light. The diodes produce a proportional amount of photocurrents. The ratio of the photocurrents stays constant with high accuracy when either the LED current changes or the ambient temperature changes. Thus one can control the output diode current optically by controlling the input photodiode current. K 1 .043 (1.08) .033 (.83) .050 (1.25) Typ. .291 (7.39) ±010 (.254) .015 (.375) ±.002 (.050) 40° .091 (2.3) .083 (2.1) .016 (.41) Typ. 3°–7° .006 (.15) Typ. 10° Typ. Absolute Maximum Ratings Maximum Ratings Emitter Reverse Voltage..........................................................................................3.0 V Forward Current ...................................................................................... 30 mA Surge Current, Pulse Width <10 µs ....................................................... 150 mA Power Dissipation, TA=25°C .................................................................150 mW Derate Linearly from 25°C .................................................................2.0 mW/°C Detector Reverse Voltage ..........................................................................................15 V Power Dissipation ....................................................................................50 mW Derate Linearly from 25°C ...............................................................0.65 mW/°C Junction Temperature ...............................................................................100°C Coupler Isolation Test Voltage, t=1.0 sec. ..................................................... 3000 VRMS Total Package Power Dissipation .........................................................250 mW Derate Linearly from 25°C .................................................................2.8 mW/°C Storage Temperature Range....................................................–40°C to +150°C Operating Temperature...............................................................................75°C Lead Soldering Time at 260°C ............................................................... 10 sec. Isolation Resistance VIO=500 V, TA=25°C ........................................................................... ≥1012 Ω VIO=500 V, TA=100°C ......................................................................... ≥1011 Ω 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany www.osram-os.com • +49-941-202-7178 1 March 8, 2000-01 Electrical Characteristics TA=25°C LED Emitter Symbol Min. Typ. Max. Units Test Conditions Forward Voltage VF — 1.8 2.1 V IF=10 mA Reverse Current IR — .01 10 µA VR=3.0 V VF Temperature Coefficient ∆VF/∆°C — –2.2 — mV/°C — Junction Capacitance CJ — 15 — pF VF=0 V, f=1.0 MHz Dynamic Resistance ∆VF/∆IF — 6.0 — Ω Switching Time IL358/9 tf — 40 — ns tr — 40 — ns CJ — 12 — pF VF=0 V, f=1.0 MHz — W/√Hz VDET=0 V IF=2.5 mA ∆IF=1.0 mA Detector Junction Capacitance NEP — — <4 –14 AC Characteristics Photovoltaic Mode Frequency Response BW(–3dB) — 1.0 — MHz Phase Response IL358/9 — — 45 — Deg. Rise Time — — 350 — ns Modulation current ∆IP1=±6.0 µA Input-Output Capacitance CIO — 1.0 — pF VF=0 V, f=1.0 MHz Common Mode Capacitance Ccm — 0.5 — pF VF=0 V, f=1.0 MHz IP1=25 µA Package Coupled Characteristics K1 at IF=2.0 mA, VD=0 V K3 Bins Min. Typ. Max. IL350 0.003 — — A–J IL351 0.005 — — D, E, F, G IL358 0.008 — — C,D, E, F, G, H IL359 0.008 — — E, F Bin Table Bin Min. Max. A B C D E F G H I J 0.557 0.620 0.690 0.765 0.851 0.945 1.051 1.169 1.297 1.442 0.626 0.696 0.773 0.859 0.955 1.061 1.181 1.311 1.456 1.618 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany www.osram-os.com • +49-941-202-7178 IL350/351/358/359 2 March 8, 2000-01