PD - 90888A IRHM9130 IRHM93130 REPETITIVE AVALANCHE AND dv/dt RATED ® HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 3 X 105 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the PChannel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHM9130 IRHM93130 BVDSS -100V -100V n n n n n n n n n n n n n Radiation Hardened up to 3 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Parameter VGS EAS IAR EAR dv/dt TJ TSTG www.irf.com ID -11A -11A Features: Absolute Maximum Ratings ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C RDS(on) 0.3Ω 0.3Ω Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Pre-Irradiation IRHM9130, IRHM93130 -11 -7.0 -44 75 0.6 ± 20 190 -11 7.5 -10 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s 9.3 (typical) Units A W W/°C V mJ A mJ V/ns o C g 1 1/6/99 IRHM9130, IRHM93130 Device Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 — — V VGS =0 V, ID = -1.0mA — -0.1 — V/°C Reference to 25°C, ID = -1.0mA — — -2.0 2.5 — — — — — — — — 0.3 0.325 -4.0 — -25 -250 ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 8.7 -100 100 45 10 25 30 50 70 70 — LS Internal Source Inductance — 8.7 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 300 74 — — — Ω V S( ) Ω BVDSS µA nA nC ns nH pF Test Conditions VGS = -12V, ID = -7.0A VGS = -12V, ID = -11A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -7.0A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS =-20 V VGS = 20V VGS = -12V, ID = -11A VDS = Max Rating x 0.5 VDD = -50V, ID = -11A, RG = 7.5Ω Measured from drain lead, 6mm (0.25 in) from package to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. VGS = 0V, VDS = -25 V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — -11 -44 A VSD trr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -3.0 250 0.84 V ns µC ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = -11A, VGS = 0V Tj = 25°C, IF = -11A, di/dt ≤ -100A/µs VDD ≤ -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA 2 Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max — — — — 1.67 0.21 — — 30 Units Test Conditions °C/W Typical socket mount www.irf.com Radiation Characteristics IRHM9130, IRHM93130 Device Radiation Performance of Rad Hard HEXFETs are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 3 x 105 Rads (Si) the only parametric limit change is maximum. V GS(th) Every manufacturing lot is tested in a low dose rate High dose rate testing may be done on a special re(total dose) environment per MIL-STD-750, test method 1019 condition A. International Rectifier has quest basis using a dose rate up to 1 x 1012 Rads imposed a standard gate condition of -12 volts per note (Si)/Sec (See Table 2). International Rectifier radia5 and a VDS bias condition equal to 80% of the device tion hardened P-Channel HEXFETs are considered rated voltage per note 6. Pre- and post- irradiation lim- to be neutron-tolerant, as stated in MIL-PRF-19500 its of the devices irradiated to 1 x 105 Rads (Si) are Group D. identical and are presented in Table1,column1, International Rectifier radiation hardened P-Channel IRHM9130. Post-irradiation limits of the devices irra- HEXFETs have been characterized in heavy ion diated to 3 x 105 Rads (Si) are presented in Table 1, Single Event Effects (SEE) environments. Single column 2, IRHM93130. The values in Table 1 will be Event Effects characterization is shown in Table 3. met for either of the two low dose rate test circuits that are used. Both pre- and post-irradiation performance International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier com prises three radiation environments. Table 1. Low Dose Rate IRHM9130 IRHM93130 Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage Table 2. High Dose Rate Test Conditions 100K Rads (Si) 300K Rads (Si) Units Min Max Min Max -100 -2.0 —— — — — -4.0 -100 100 -25 0.3 -100 -2.0 — — — — — -5.0 -100 100 -25 0.3 µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20V VDS=0.8 x Max Rating, VGS=0V VGS = -12V, ID = -7A — -3.0 — -3.0 V TC = 25°C, IS = -11A,VGS = 0V V nA 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter VDSS Drain-to-Source Voltage IPP di/dt L1 Min Typ Max Min Typ Max Units Test Conditions — — -80 — — -80 V Applied drain-to-source voltage during gamma-dot — -60 — — -60 — A Peak radiation induced photo-current — — -800 — — -160 A/µsec Rate of rise of photo-current 0.1 — — 0.5 — — µH Circuit inductance required to limit di/dt Table 3. Single Event Effects Ion LET (Si) (MeV/mg/cm2) Ni 28 www.irf.com Fluence (ions/cm2) 1x 105 Range (µm) ~41 VDSBias (V) VGS Bias (V) -100 5 3 IRHM9130, IRHM93130 Device 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 10 -5.0V 10 -5.0V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 10 V DS = -50V 20µs PULSE WIDTH 7 8 9 10 11 12 13 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 100 6 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20µs PULSE WIDTH TJ = 150 °C 1 0.1 -VDS , Drain-to-Source Voltage (V) 5 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP ID = -11A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1600 Ciss 1200 800 Coss 400 20 -VGS , Gate-to-Source Voltage (V) 2000 IRHM9130, IRHM93130 Device ID = -11A VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 Crss 0 1 10 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 -VDS , Drain-to-Source Voltage (V) 10 20 30 40 50 60 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 TJ = 150 ° C -II D , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 TJ = 25 ° C 1 100us 10 1ms 0.1 0.0 V GS = 0 V 1.0 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 TC = 25 ° C TJ = 150 ° C Single Pulse 1 1 10ms 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM9130, IRHM93130 Device Pre-Irradiation RD VDS 12 VGS D.U.T. RG 10 - -ID , Drain Current (A) + 8 VDD -12V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 4 td(on) tr t d(off) tf VGS 2 10% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM9130, IRHM93130 Device D .U .T RG IA S -20V -12V tp VD D A D R IV E R 0.0 1Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) L VDS 400 ID -4.9A -7.0A BOTTOM -11A TOP 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF .3µF -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM9130, IRHM93130 Device Pre-Irradiation Repetitive Rating; Pulse width limited by Total Dose Irradiation with VGS Bias. maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -25V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) ] Peak IL = -11A, VGS = -12V, 25 ≤ RG ≤ Ω ISD ≤ -11A, di/dt ≤ -480A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 7.5Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-Irradiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. All Pre-Irradiation and Post-Irradiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions — TO-254AA .1 2 ( .0 0 5 ) 1 3 .8 4 ( .5 4 5 ) 1 3 .5 9 ( .5 3 5 ) 3 .7 8 ( .1 4 9 ) 3 .5 3 ( .1 3 9 ) -A - 2 0 .3 2 ( .8 0 0 ) 2 0 .0 7 ( .7 9 0 ) 17 .4 0 ( .6 8 5 ) 16 .8 9 ( .6 6 5 ) 3 1 .4 0 ( 1 .2 3 5 ) 3 0 .3 9 ( 1 .1 9 9 ) 1 2 -B - 6 .6 0 ( .26 0 ) 6 .3 2 ( .24 9 ) 1 .27 ( .0 5 0 ) 1 .02 ( .0 4 0 ) 1 3 .84 ( .5 4 5 ) 1 3 .59 ( .5 3 5 ) LEG END 1 - C O L L E C TO R W 2 - E M ITTE R 3 - G A TE 3 -C - 3X 3 .8 1 ( .1 5 0 ) 2X 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) .50 ( .0 20 ) .25 ( .0 10 ) 1 2 3 3 .8 1 ( .1 5 0 ) M C A M B M C N O TE S : 1 . D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ). LEGEND 1- DRAIN 2- SOURCE 3- GATE LEGEND 1- DRAIN 2- SOURCE 3- GATE Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and ( Inches ) CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 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