VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 (Electrically Isolated Back Surface) ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, Pulse width limited by TJM IAR TC = 25°C 43 48 200 220 50 55 A A A A A A EAR TC = 25°C 60 mJ EAS TC = 25°C 3 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 400 W -40 ... +150 150 -40 ... +150 °C °C °C l 300 °C l 2500 V~ l 5 g TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS 50N50 55N50 50N50 55N50 50N50 55N50 t = 1 min Weight G Isolated back surface* G = Gate S = Source Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1mA 500 V VGS(th) VDS = VGS, ID = 8mA 2.5 4.5 V IGSS VGS = ±20 V, VDS = 0 Features l l l IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VGS = 10 V, ID = IT Note 1 50N50 55N50 © 2002 IXYS All rights reserved 25 µA 2 mA 100 mΩ 90 mΩ Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<50pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications l l l l ±200 nA D = Drain * Patent pending l Symbol D DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages l l l Easy assembly Space savings High power density 98588B (04/02) IXFR 50N50 IXFR 55N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = IT Note 1 45 S 9400 pF 1280 pF Crss 460 pF td(on) 45 ns 60 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT td(off) RG = 1 Ω (External), 120 ns 45 ns 330 nC 55 nC 155 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd 0.30 RthJC 0.15 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 55N50 50N50 55 50 A A ISM Repetitive; pulse width limited by TJM 55N50 50N50 220 200 A A VSD IF = IS, VGS = 0 V 1.5 V 250 ns t rr QRM ISOPLUS 247 OUTLINE IF = 25A,-di/dt = 100 A/µs, VR = 100 V 1.0 µC 10 A IRM See IXFK55N50 data sheet for characteristic curves. Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2. IT test current: 50N50 IT = 25A 55N50 IT = 27.5A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1