Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM Q-Class IXFR 58N20Q VDSS = 200 V = 50 A ID25 RDS(on) = 40 mW trr £ 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 50 232 58 A A A EAR EAS TC = 25°C TC = 25°C 30 1.0 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 250 °C 2500 V~ 5 g TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Symbol Test Conditions VDSS VGS = 0 V, ID = 250 mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 29A Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 V 2.0 4.0 V ±100 nA TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved ISOPLUS 247TM E153432 G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • IXYS advanced low Qg process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic diode Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control 25 mA 1 mA Advantages 40 mW • Easy assembly • Space savings • High power density 98591A (03/24/00) 1-2 IXFR 58N20Q Symbol Test Conditions gfs VDS = 10 V; ID = 29A Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 24 34 S 3600 pF 870 pF 280 pF 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 29A 40 ns td(off) RG = 1.5 W (External), 40 ns tf 13 ns Qg(on) 98 140 nC 25 35 nC 45 70 nC 0.5 K/W Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 29A Qgd RthJC RthCK (TO-247) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD 0.15 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 58 A Repetitive, Note 1 232 A IF = Is, VGS = 0 V, Note 2 1.5 V 200 ns t rr QRM K/W IF = Is, -di/dt = 100 A/ms, VR = 100 V IRM 0.7 mC 7 A ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2