ETC JANTX2N5667

The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 31 October 2001.
INCH-POUND
MIL-PRF-19500/455D
31 July 2001
SUPERSEDING
MIL-PRF-19500/455C
25 January 1998
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING,
TYPES 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, AND 2N5667S,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated
device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-66), figure 2 (TO-5), figure 3 (surface mount), and figure 4 (JANHC,
JANKC).
1.3 Maximum ratings.
Type
2N5664
2N5665
2N5666, S, U3
2N5667, S
(1)
(2)
(3)
(4)
PT
TA = +25°C
PT
TC = +100°C
VCBO
VCEO
VEBO
IC
IB
Tstg and Top
W
W
V dc
V dc
V dc
A dc
A dc
°C
250
400
250
400
200
300
200
300
6
6
6
6
5
5
5
5
1
1
1
1
-65 to +200
-65 to +200
-65 to +200
-65 to +200
2.5
2.5
1.2
1.2
(1)
(1)
(3)
(3)
30
30
15
15
(2)
(2)
(4)
(4)
Derate linearly 14.3 mW/°C for TA > +25°C.
Derate linearly 300 mW/°C for TC > +100°C .
Derate linearly 6.9 mW/°C for TA > +25°C.
Derate linearly 150 mW/°C for TC > +100°C .
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/455D
1.4 Primary electrical characteristics at TA = +25°C.
hFE
VCE = 5 V
IC = 1 A
Limits
2N5665
2N5667, S
Min
Max
2N5664
2N5666, S, U3
25
75
|hfe|
VBE(sat)
VCE = 5 V IC = 3 A
IC = 0.5 A dc
dc
(1)
f = 10 MHz
40
120
2.0
7.0
VCE(sat)
IC = 3 A dc
(1)
IC
ton
=1A
dc
Pulse response
toff
IC = 1 A dc
2N5664
2N5666, S, U3
2N5665
2N5667, S
V dc
V dc
µs
µs
µs
1.2
0.4
0.25
1.5
2.0
(1) IB = 0.3 A dc for 2N5664, 2N5666, 2N5666S, 2N5666U3; IB = 0.6 A dc for 2N5665, 2N5667, 2N5667S.
Type
RθJC
°C/W (max)
2N5664, 2N5665
2N5666, 2N5667
2N5666S, 2N5667S, 2N5666U3
3.3
6.7
6.7
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750
-
Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2
MIL-PRF-19500/455D
Dimensions
Ltr
Inches
Min
CD
Max
Millimeters
Min
.620
Max
15.75
3
CD1
.470
.500
11.94
12.70
CH
.250
.340
6.35
8.64
3
8.89
6
HR
.350
HR1
.115
.145
2.92
3.68
HT
.050
.075
1.27
1.91
3
1.27
3
HT1
.050
LD
.028
.034
.711
.863
5, 9
LL
.360
.500
9.14
12.70
5, 9
1.27
4
7
L1
.050
MHD
.142
.152
3.62
3.86
MHS
.958
.962
24.33
24.43
NOTES:
1.
Dimensions are in inches.
PS
.190
.210
4.83
2.
Metric equivalents are given for general information only.
PS1
.093
.107
2.36
3.
Body contour is optional within zone defined by LD and
CD.
S1
.570
.590
14.48
4.
These dimensions should be measured at points
.050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used,
measurement will be made at seating plane.
5.
Both terminals.
6.
At both ends.
7.
Two holes.
8.
The collector shall be electrically connected to the case.
9.
LD applies between L1 and LL. Diameter is uncontrolled in L1.
FIGURE 1. Physical dimensions of transistor types 2N5664 and 2N5665.
3
Notes
5.33
4
2.72
4
14.99
MIL-PRF-19500/455D
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
LD
.1414 Nom
.016
LL
.021
3.59 Nom
0.41
0.53
Notes
6
3
See notes 13 and 14
L1
.050
L2
.250
LU
.016
P
.100
1.27
6.35
.019
0.41
10
10
0.48
2.54
Q
4
5
6
NOTES:
1. Dimensions are in inches.
r
.007
0.18
2. Metric equivalents are given for general information only.
TL
.029
.045
0.74
1.14
3. Measured in the zone beyond .250 inches (6.35 mm) from
the seating plane.
TW
0.28
.034
0.71
0.86
4. Measured in the zone .050 inches (1.27 mm) and .250
inches (6.35 mm) from the seating plane.
5. Variations on dimension CD in this zone shall not exceed .010 inches (0.25 mm).
6. Outline in this zone is not controlled.
7. When measured in a gauging plane .054 inches +.001, -.000 (1.37 mm +.03, -.00 ) below the seating plane of
the transistor, maximum diameter leads shall be within .007 inches (.18 mm) of their true location relative to a
maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead
tolerance.
8. The collector shall be electrically connected to the case.
9. Measured from the maximum diameter of the actual device.
10. All three leads
11. Diameter of leads in this zone is not controlled.
12. Lead 1 - Emitter; lead 2 - Base, lead 3 - Collector.
13. For transistor types 2N5666 and 2N5667, LL is 1.500 inches (38.1 mm) minimum and 1.75 inches (44.45 mm)
maximum.
14. For transistor types 2N5666S and 2N5667S, LL is .500 inches (12.7 mm) minimum and .75 inches (19.05
mm) maximum.
FIGURE 2. Physical dimensions of transistor types 2N5666, 2N5666S, 2N5667 and 2N5667S.
4
MIL-PRF-19500/455D
SCHEMATIC
1
2
3
Symbol
Dimensions
Inches
BL
BW
CH
LH
LW1
LW2
LL1
LL2
LS1
LS2
Q1
Q2
Min
.395
.291
.1085
.010
.281
.090
.220
.115
Millimeters
Max
.405
.301
.1205
.020
.291
.100
.230
.125
Min
10.04
7.40
2.76
0.25
7.14
2.29
5.59
2.93
.150 BSC
.075 BSC
Max
10.28
7.64
3.06
0.51
7.41
2.54
5.84
3.17
3.81 BSC
1.91 BSC
.030
.030
0.762
0.762
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimensions and tolerances shall be in accordance with ANSI Y14.5M-1982.
4. Terminal 1 - collector, terminal 2 - base, terminal 3 - emitter.
FIGURE 3. Physical dimensions, surface mount (2N5666U3 version).
5
MIL-PRF-19500/455D
1.
2.
3.
4.
Chip size:
Chip thickness:
Top metal:
Back metal:
5. Backside:
6. Bonding pad:
120 x 120 mils ± 2 mils
10 ± 1.5 mils nominal
Aluminum 30,000Å minimum, 33,000Å nominal
A. Al/Ti/Ni/Ag12kÅ/3kÅ/7kÅ/7kÅmin.15kÅ/5kÅ/10kÅ/10kÅ nom.
B. Gold 2,500 minimum, 3,000Å nominal
Collector
B = 52 x 12 mils, E = 84 x 12 mils.
FIGURE 4. JANHC and JANKC (A-version) die dimensions.
6
MIL-PRF-19500/455D
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1 (TO-66), figure 2 (TO-5), figure 3 (surface mount), and figure 4 (JANHC, JANKC)
herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4 and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3 herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
7
MIL-PRF-19500/455D
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
9
ICES1 and hFE2
ICES1
11
∆ICES1 and hFE2;
∆ICES1 = 100 percent of initial value or
10 nA dc, whichever is greater;
∆hFE2 = ± 15 percent.
ICES1 and hFE2;
∆ICES1 = 100 percent of initial value or
20 nA dc, whichever is greater.
12
See 4.3.1
See 4.3.1
13
Subgroup 2 of table I herein;
∆ICES1 = +100 percent of initial value or
10 nA dc, whichever is greater.
∆hFE2 = ±15 percent.
Subgroup 2 of table I herein;
∆ICES1 = +100 percent of initial value
or 20 nA dc, whichever is greater.
∆hFE2 = ± 25 percent.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = + 187.5 ± 12.5°C, VCE = 100 V dc,
TA ≤ + 100°C. Burn-in duration for lot acceptance for the JANKC level follows JANS requirements. Burn-in duration
for lot acceptance for the JANHC level follows JANTX requirements.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500. As a minimum, die shall be 100 percent probed to insure the assembled chips will meet the
requirements of group A, subgroup 2.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample
of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500
and table I herein. End-point electrical measurements shall be in accordance with group A, subgroup 2.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and
4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2.
Delta measurements shall be in accordance with the steps in table II herein as specified in the notes for table II.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B4
1037
VCB = 30 V dc minimum, PT = 1.2 W (TO-5),. PT = 2.5 W (TO-66) minimum, TA
= +25°C ± 3°C; ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink
or forced-air cooling on devices shall be permitted.
B5
1027
See 4.5.4 herein.
B6
3131
See 4.5.2 herein.
8
MIL-PRF-19500/455D
4.4.2.2 Group B inspection, table VIb (JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
B3
1027
TJ = +187.5°C ± 12.5°C, VCE = 100 ± 5 V dc; TA = ≤ +100°C.
B5
3131
See 4.5.2 herein.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall
be in accordance with group A, subgroup 2. Delta measurements shall be in accordance with the steps in table II
herein as specified in the notes for table II.
Subgroup
C2
Method
Condition
2036
Terminal strength (tension) 2N5664 and 2N5665 only: Test condition A,
weight = 3 pounds, application time = 15 seconds.
Terminal strength (lead fatigue) 2N5666, 2N5666S, 2N5667 and 2N5667S
only: Test condition E (Not applicable to 2N5666U3).
C6
1027
2N5664, 2N5666, 2N5666S, 2N5666U3: TC = +100 °C; PT = 30 W;
VCE = 30 V dc.
2N5665, 2N5667 and 2N5667S, TA = +25°C; PT = 1.2 W; VCE = 40 V.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method
3131 of MIL-STD-750. The following details shall apply:
a.
Collector current magnitude during power application:
(1) 2N5664 and 2N5665, 0.833 A dc.
(2) 2N5666, 2N5666S, 2N5666U3, 2N5667 and 2N5667S, 0.41 A dc.
b.
Collector to emitter voltage magnitude shall be 20 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference temperature measuring point shall be +25°C ≤ TR ≤ +75°C and recorded before the test is
started.
e.
Mounting arrangement shall be with heat sink to header.
f.
Maximum limit of RθJC: 2N5664 and 2N5665 shall be 3.3°C/W; 2N5666, 2N5666S, 2N5666U3, 2N5667 and
2N5667S shall be 6.7°C/W.
9
MIL-PRF-19500/455D
4.5.3 Inspection conditions. Unless otherwise specified herein, all inspections shall be conducted at a case
temperature (TC) of +25°C.
4.5.4 Group B accelerated life test. This test shall be conducted using one of the three options listed herein (a,
b, or c) with the following conditions applying to all options: VCB = 30 V dc, 96 hours minimum, TJ = +275°C.
a. TA = +150°C, maximum.
b. PT = 2.5 W (TO-66); PT = 1.2 W (TO-5, U3 suffix), TA = +112°C or PT adjusted to give a lot average of
TJ = +275°C.
c. TA = +25°C +3 °C with PT adjusted to give a lot average of TJ = +275°C.
10
MIL-PRF-19500/455D
TABLE I. Group A inspection.
Inspection 1/ 2/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 1
Visual and mechanical
inspection
2071
Subgroup 2
Breakdown voltage collector
to emitter
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
3011
Bias condition B; IC = 10 mA dc,
pulsed (see 4.5.1), R1 = 100 Ω
Breakdown voltage emitter to
base
3026
Bias condition D, IE = 10 µA dc,
pulsed (see 4.5.1)
Collector to emitter cutoff
current
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
3041
Bias condition C
Collector to base cutoff current
2N5664, 2N5666, 2N5666S
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
2N5665, 2N5667, 2N5667S
3036
Forward-current transfer ratio
3076
V(BR)CER
V(BR)EBO
6
V dc
0.2
µA dc
0.1
1.0
0.1
1.0
µA dc
mA dc
µA dc
mA dc
VCE = 200 V dc
VCE = 300 V dc
Bias condition D
VCB = 200 V dc
VCB = 250 V dc
VCB = 300 V dc
VCE = 400 V dc
ICBO
VCE = 2 V dc, IC = 0.5 A dc
pulsed (see 4.5.1)
hFE1
40
25
3076
VCE = 5 V dc, IC = 1.0 A dc
pulsed (see 4.5.1)
hFE2
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Forward-current transfer ratio
V dc
V dc
ICES1
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Forward-current transfer ratio
250
400
40
25
3076
VCE = 5 V dc, IC = 3.0 A dc
pulsed (see 4.5.1)
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
hFE3
15
10
See footnotes at end of table.
11
120
75
MIL-PRF-19500/455D
TABLE I. Group A inspection - Continued.
Inspection 1/ 2/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 2 - Continued
Forward-current transfer ratio
3076
VCE = 5 V dc, IC = 5 A dc,
pulsed (see 4.5.1)
Collector-emitter saturation
voltage
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
3071
IC = 3.0 A dc,
Collector-emitter saturation
voltage
3071
Base-emitter saturation
voltage
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
3066
Base-emitter saturation
voltage
3066
hFE4
5
VCE(sat)1
0.4
V dc
IC = 5 A dc, IB = 1 A dc,
pulsed (see 4.5.1)
VCE(sat)2
3/
1.0
V dc
Test condition A, IC = 3.0 A dc,
VBE(sat)1
3/
1.2
V dc
VBE(sat)2
1.5
V dc
ICES2
100
µA dc
IB = 0.3 A dc, pulsed (see 4.5.1)
IB = 0.6 A dc, pulsed (see 4.5.1)
IB = 0.3 A dc, pulsed (see 4.5.1)
IB = 0.6 A dc, pulsed (see 4.5.1)
Test condition A, IC = 5 A dc,
IB = 1 A dc, pulsed (see 4.5.1)
Subgroup 3
High-temperature
operation:
Collector to emitter cutoff
current
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
TA = + 150°C
3041
VCE = 200 V dc
VCE = 300 V dc
Low-temperature operation
Forward-current transfer
ratio
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Bias condition C
TA = -55°C
3076
VCE = 5 V dc, IC = 1.0 A dc,
pulsed (see 4.5.1)
hFE5
15
10
See footnotes at end of table.
12
MIL-PRF-19500/455D
TABLE I. Group A inspection - Continued.
Inspection 1/ 2/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Max
2.0
7.0
Unit
Subgroup 4
Magnitude of common-emitter,
small-signal short-circuit,
forward-current, transfer ratio
3306
VCE = 5 V dc, IC = 0.5 A dc
f = 10 MHz
| hfe |
Open-circuit output
capacitance
3236
VCB = 10 V dc, 100 kHz ≤ f ≤ 1
MHz
Cobo
120
pF
3251
Test condition A; IC = 1.0 A dc,
VCC = 100 V dc
See figure 5
See figure 6
ton
0.25
µs
3251
Test condition A; IC = 1.0 A dc,
VCC = 100 V dc
See figure 5
See figure 6
toff
1.5
2.0
µs
µs
Pulse response
Turn-on time
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Turn-off time
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
Subgroup 5
Safe operating area
(continuous dc) (for types
2N5664 and 2N5665 only)
Test #1
2N5664 and 2N5665
3051
TC = + 100°C, t ≥ 1 s, 1 cycle;
tr + tf = 10 µs (see figure 7)
VCE = 6 V dc, IC = 5 A dc
Test #2
2N5664 and 2N5665
VCE = 40 V dc, IC = 0.75 A dc
Test #3 2N5664
VCE = 200 V dc, IC = 43 mA dc
Test #4 2N5665
VCE = 300 V dc, IC = 21 mA dc
See footnotes at end of table.
13
MIL-PRF-19500/455D
TABLE I. Group A inspection - Continued.
Inspection 1/ 2/
MIL-STD-750
Method
Conditions
Symbol
Limits
Min
Subgroup 5 - Continued
Safe operating area
(continuous dc) (for types
2N5666, 2N5666S,
2N5667, and 2N5667S
3051
TC = + 100°C, t ≥ 1 s, 1 cycle;
tr + tf = 10 µs (see figure 8)
Test #1
2N5666, 2N5666S,
2N5667, and 2N5667S
VCE = 3.0 V dc, IC = 5 A dc
Test #2
2N5666, 2N5666S,
2N5667, and 2N5667S
VCE = 37.5 V dc, IC = 0.4 A dc
Test #3
2N5666 and 2N5666S
VCE = 200 V dc, IC = 27 mA dc
Test #4
2N5667 and 2N5667S
VCE = 300 V dc, IC = 14 mA dc
Safe operating area
(switching)
3053
Load condition B (clamped
inductive load) (see figure 9); TC =
+ 100°C, tr + tf ≤ 10 µs, duty cycle
≤ 2 percent; tp = 4 ms; RS = 0.5 Ω,
RBB1 = 50 Ω, VBB1 = 50 V dc
RBB2 = 50 Ω, VBB2 = -4 V dc
IC = 5 A dc, VCC = 50 V dc
RL ≤ 2.5 Ω, L = 40 mH (Triad C48U or equivalent)
2N5664
2N5666 and 2N5666S
Clamp voltage = 200 +0, -5 V dc
2N5665
2N5667 and 2N5667S
Clamp voltage = 300 +0, -5 V dc
End-point electrical
measurements
See table I, group A, subgroup 2
herein
Subgroups 6 and 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500
2/ Electrical characteristics for 2N5666U3 are identical to 2N5666 unless otherwise noted.
3/ Measured at less than 0.125 inch (3.175 mm) from case.
14
Max
Unit
MIL-PRF-19500/455D
TABLE II. Groups B and C delta measurements. 1/ 2/ 3/
Steps
Inspection 4/
MIL-STD-750
Method
1.
2.
1/
2/
3/
4/
5/
Collector to emitter
cutoff current
3041
Conditions
Base condition C
2N5664
2N5666, 2N5666S, 2N5666U3
VCE = 200 V dc
2N5665
2N5667, 2N5667S
VCE = 300 V dc
Forward-current
transfer ratio
3076
Symbol
VCE = 5 V dc, IC = 1.0 A dc
pulsed (see 4.5.1)
Limits
Min
Unit
Max
∆ICES1
100 percent of initial
value or 20 nA dc,
whichever is greater.
∆hFE2 5/
± 25 percent change
from initial reading.
The delta measurements for table VIa (JANS) of MIL-PRF-19500 are after subgroups 4 and 5, and consist of
steps 1 and 2 of table II herein.
The delta measurements for table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows:
Subgroups 3 and 6, see table II herein, steps 1 and 2.
The delta measurements for table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table II herein, steps 1
and 2.
See MIL-PRF-19500 for sampling plan.
Measured at less than .125 inch (3.175 mm) from case.
15
MIL-PRF-19500/455D
NOTES:
1. The input waveform is supplied by a pulse generator with the following characteristics: tr ≤ 15 ns, tf ≤ 15 ns,
Zout = 50 ohm, PW = 10 µs, duty cycle ≤ 2 percent.
2. Output waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ 15 ns, Zin ≥ 10 M
Ω, Cin ≤ 11.5 pF.
3. Resistors shall be noninductive types.
4. The dc power supplies may require additional bypassing in order to minimize ringing.
5. The input pulse voltages and supply voltages (-4 V dc and + 100 V dc) are nominal and shall be adjusted to
obtain IB1 = - IB2 = 30 mA and IC = 1 A.
6. An equivalent circuit may be used.
7. 0.02 µF capacitor may be removed during voltage adjustments.
FIGURE 5. Pulse response test circuit for types 2N5664, 2N5666, 2N5666S, and 2N5666U3.
16
MIL-PRF-19500/455D
NOTES:
1. The input waveform is supplied by a pulse generator with the following characteristics: tr ≤ 15 ns, tf ≤ 15 ns,
Zout = 50 ohm, PW = 10 µs, duty cycle ≤ 2 percent.
2. Output waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ 15 ns, Zin ≥ 10
MΩ, Cin ≤ 11.5 pF.
3. Resistors shall be noninductive types.
4. The dc power supplies may require additional bypassing in order to minimize ringing.
5. The input pulse voltages and supply voltages (-4 V dc and + 100 V dc) are nominal and shall be adjusted to
obtain IB1 = - IB2 = 50 mA and IC = 1 A.
6. An equivalent circuit may be used.
7. 0.02 µF capacitor may be removed during voltage adjustments.
FIGURE 6. Pulse response test circuit for types 2N5665, 2N5667 and 2N5667S.
17
MIL-PRF-19500/455D
FIGURE 7. Maximum safe operating graph (continuous dc) for types 2N5664 and 2N5665.
18
MIL-PRF-19500/455D
NOTE: Electrical characteristics for "S" and "U3" suffix devices are identical to their corresponding devices without
the suffix.
FIGURE 8. Maximum safe operating graph (continuous dc) for types 2N5666, 2N5666S, 2N5666U3, 2N5667, and
2N5667S.
19
MIL-PRF-19500/455D
NOTE: Electrical characteristics for "S" and "U3" suffix devices are identical to their corresponding devices without
the suffix.
FIGURE 9. Safe operating area for switching between saturation and cutoff (clamped inductive load).
20
MIL-PRF-19500/455D
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. The acquisition requirements are as specified in MIL-PRF-19500.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N5664) will be identified on the QML.
Die ordering information (1)
PIN
Manufacturer
43611
2N5664
2N5665
2N5666
2N5667
JANHCA2N5664
JANHCA2N5665
JANHCA2N5666
JANHCA2N5667
(1) For JANKC level, replace JANHC with JANKC.
6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect
to the previous issue due to the extent of the changes.
Custodians:
Army - CR
Navy - NW
Air Force - 11
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2445)
Review activities:
Army - AR, MI
Navy - AS, MC
Air Force - 19
21
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/455D
2. DOCUMENT DATE (YYMMDD)
31 July 2001
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES 2N5664,
2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, AND 2N5667S, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as
needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
Commercial
DSN
FAX
EMAIL
7. DATE SUBMITTED
(YYMMDD)
8. PREPARING ACTIVITY
a. Point of contact:Alan Barone
c. ADDRESS
Defense Supply Center Columbus, ATTN:
DSCC-VAC, P.O. Box 3990, Columbus,
OH 43216-5000
DD Form 1426, Feb 1999 (EG)
b. TELEPHONE
Commercial
DSN
614-692-0510
850-0510
FAX
614-692-6939
EMAIL
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Previous editions are obsolete
WHS/DIOR, Feb 99